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etchant相关的网络例句

查询词典 etchant

与 etchant 相关的网络例句 [注:此内容来源于网络,仅供参考]

Alternate outgrowthprocess is firstly used to form over 1.0μm thickArsenic heavily doped inner polysilicon layer and slightly doped outer polysilicon layer.T-shaped edge field emitters are fabricated with the HHC etchant.

首次采用"交替生长"技术生长内层厚度超过1.0μm重掺杂砷和外层轻掺杂砷的双层多晶硅薄膜,利用氢氟酸、硝酸、冰醋酸腐蚀液对不同掺杂浓度多晶硅选择性腐蚀的特点成功制备T形横向边缘场致发射阴极阵列。

This is a subtractive process that uses photolithographic techniques to define the aperture pattern, and then applies an etchant to form the apertures simultaneously from both sides of the stencil.

这是一个反工艺,它应用成像技术来决定孔型。然后,同时从钢网的两边腐蚀成孔。

Etchant surface tension: because everything has a certain amount of surface area so liquid surface as if there is a layer of thin films, this film a molecular-level of attractiveness to shrinking trend, in order to maintain this balance, of surface tension in the gelifen surface must be enclosed in a suitable and surface force tangent to the surface area of, and this is no longer shrink and surface force called the tangent to the surface tension.

蚀刻液的暗地压辛:因为任何物体都有必定的暗地积因此不流体暗地不离仿佛有一层放宽的不厚膜,这层不厚膜具有一股分子级的边向推斥辛,使其有关上的趋向,为了保持这安详的暗地不均,在暗地周界上务必增一不合的和暗地相切辛才能使暗地保持必定的背积,不一再关上,这种和暗地相切的辛叫暗地压辛。

For purification of nitrogen trifluoride(NF3) which is used as a plasma etchant and cleaning gas for chemical vapor deposition chambers, a few purification methods and equipments may be chosen according to difference in boiling points and physico-chemical properties of NF3 and its impurities.

三氟化氮作为等离子蚀刻剂和化学气相沉积室的清洗气体,可根据粗三氟化氮气体中各组分的沸点及物理、化学性质的差异选择不同的纯化工艺及设备。

For example, an etchant can be applied to the inner surface 450 through a descender e.g., descender 130 in FIG.

当施加非湿润涂层470时还可以使用在此描述的方法,在将喷嘴层420附着于该流动路径模块之后。

One method of applying an etchant through the descender is to connect an ozone generator to an inlet port of the assembled fluid ejector and supply ozone (e.g., at a 2% or greater concentration in oxygen gas or in a mixture of oxygen and nitrogen) to the descender and the inner surface 450 through the inlet port.

一种通过该下睁部施加蚀刻剂的方法是将臭氧发生器连接到该装配的流体喷射器的入口,并且通过该入口将臭氧(例如,以氧气中或氧和氮的混合物中2%或更大的浓度)提供到该下降部和内表面450。

Hydrogen chloride has many uses, including the hydrochlorination of rubber, the manufacture of pharmaceuticals, in metals manufacturing as a babbitting flux, in the textiles industry for delinting of cotton seeds and the reclamation of wool, gasoline refining, the manufacture of organic and inorganic chlorinated compounds, and in the manufacture of semiconductors as an etchant.

氯化氢有许多用途,包括橡胶的氢氯化反应、药品生产、在金属生产中作为镶巴比合金焊剂、纺织工业中用于除棉籽和毛线的回收、汽油精制、有机和无机氯化合物的生产、半导体生产中作为蚀刻剂。

In another version, an acidic etchant is used to remove the layer.

在另一方案中,使用酸性蚀刻剂去除所述层。

Chapter 5 describes materials for experiment and experimental procedures, which focuses on comparing the different effects of two etchant.

第5章介绍了试验材料和试验方法,对两种侵蚀剂的效果进行了比较。

Device type: structure of the device is also an Etchant characteristics of one of the factors.

摆撤的典范榜样:摆撤的布局步地也是不不对蚀刻液共性的感化次给身分之一。

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