英语人>网络例句>etchant 相关的网络例句
etchant相关的网络例句

查询词典 etchant

与 etchant 相关的网络例句 [注:此内容来源于网络,仅供参考]

Distance: the so-called distance refers to the nozzle to the plate surface, which is the distance from the Etchant spray to the substrate surface distance, this is very important.

间隔:所谓间隔是指喷咀到不活背的间隔,也不离是蚀刻液喷淋到基不活暗地的间隔,这是不入格次给的。

A power source is applied to the structure to control the directionality of the plasma formed by exciting the power isolation of the etchant gas.

控制等离子体的方向性的电源与用来激活腐蚀剂气体的电源隔离。

Spraying is preferred, especially where the metal or alloy is in the vertical position since this allows for quicker removal of the chemical etchant containing removed metal and/or alloy.

喷涂是首选,尤其是在金属或合金的,因为这更快含有的化学去除金属蚀刻剂和/或合金的撤消,允许垂直位置。

The best compositions of the polishing solution for the crystal surface and of the etchant for revealing dislocations are given.

确定了所选定的位错侵蚀剂的侵蚀规范;此侵蚀剂对晶面无选择性,能显示出刃型和螺型位错,以及&新&、&旧&位错。

The waste came mainly from the waste-chloroben, film and paper waste, waste like Etchant, binders, Business card printing and membership card making circuit board manufacturing process.

这些废物主要来自废显影液、胶片及废像纸,废蚀刻液、黏合剂,制卡和会员卡制作线路板制造过程中。

The choice of Etchant is very important, it's so important is because it is in the printed circuit board manufacturing process directly affects the high density of thin wire image precision and quality.

蚀刻液的拔取是不入格次给的,它所以次给是因为它在印制电路不活创息发明工艺洋间接感化矮密度粗导线图像的精度和质度。

Etchant surface tension on etching rate and quality of etching, and solid surface (of a copper foil related surface) wettibility.

蚀刻液的暗地压辛不小小不不对蚀刻速度和蚀刻质度的感化,与不流体暗地湿润水平有关。

It is a common way to alter the etching rate by changing the material of sacrificial layer, concentration of etchant, temperature or structure of sacrificial layer.

通过改变牺牲层材料、腐蚀液浓度、温度和牺牲层结构来改变腐蚀速率是常用的方法。

The basis of this method is that the temperature variation of an etchant film is induced by the absorption or release of chemical heat during the startup of the reaction.

该方法的实质是利用反应启动时必然有化学热吸收或释放,从而引起材料表面液层温度变化这一特点,通过红外热像实时监测系统,采集液层温度变化过程的红外热像,从而判断反应启动时长。

The etchant gas can be used during a nitride etch step in a process for making a metal oxide semiconductor field effect transistor.

在制造金属氧化物半导体场效应晶体管的工艺中的氮化物腐蚀步骤中,可以使用此腐蚀剂气体。

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