查询词典 doped semiconductor

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

该方法包括以下步骤：在硅衬底上形成可剥离树脂层；在所述可剥离树脂层上形成布线衬底；将半导体芯片安装在所述布线衬底上；通过用密封树脂密封所述多个半导体芯片来形成半导体器件；通过从密封树脂侧将这些半导体器件切分但是保留硅衬底来使这些半导体器件个体化；将每个个体化半导体器件在所述硅衬底和可剥离树脂层之间从硅衬底上剥离；并且通过形成穿过可剥离树脂层的孔或者通过除去可剥离树脂层来使布线衬底上的端子暴露。

This invention discloses a new technology for preparing rear earth ionic doped fiber prefabricated rods with DC-RTA technology in a sol-gel method including preparing sol containing necessary doped ions, coating said sol uniformly on the inner wall of the quartz glass tube and burning it under high temperature to coagulate and vitrify them to a doped layer and repeating the above process to form a fiber prefabricated rod by oxygen and hydrogen flame after the doped layer reaches to a designed thickness and the fiber prefabricated rod can be made to various rare earth ionic doped fibers by an ordinary drawbench technology.

本发明属于光纤制造和光纤激光技术领域，具体公开了一种利用溶胶凝胶方法中的DC-RTA技术制备稀土离子掺杂光纤预制棒的新工艺。该工艺步骤包括预先配制好含有所需掺杂离子的溶胶，将该溶胶均匀涂覆在石英玻璃管的内壁后高温灼烧，使之凝结并玻璃化为一层掺杂层。反复上述涂覆灼烧过程，在掺杂层达到设计厚度后由氢氧焰高温收棒形成光纤预制棒。该方法所得到的光纤预制棒可以通过普通拉丝工艺拉制成各类稀土离子掺杂光纤。

The research which is the important part of the tunable erbium-doped fiber laser is composed of two main parts: 1. the gain part of the tunable erbium-doped fiber laser, which in fact is an erbium-doped fiber amplifier, its output characteristics are discussed both in theory and experiment, and the differences are also discussed between theory and experiment; 2. the saturated absorber part of the tunable erbium-doped fiber laser, also the part to narrow the line width of the fiber laser. The line-width narrowing mechanism in fiber laser induced by unpumped Er-doped fiber is presented from the aspect of coupling wave equation, and the main factor is considered as the standing wave induced by interference. The line-width is narrower when the standing wave is stronger, and the narrowing effect disappears with the disappearance of the standing wave. In the experiment, when adding a Faraday mirror in the laser cavity to remove the standing wave , the narrowing effect disappears. So the theory is proved by the result of the experiment.

本课题的研究内容是集成光学声光可调谐掺铒光纤激光器的重要组成部分，主要分两部分：1、声光可调谐掺铒光纤激光器中增益部分的研究，相当于对掺铒光纤放大器的研究，理论上对掺铒光纤放大器的输出特性进行分析，实验上实现了掺铒光纤放大器系统，并将实验数据与理论计算数据进行对比，分析了误差产生原因；2、声光可调谐掺铒光纤激光器中饱和吸收体部分的研究，即压窄光纤激光器输出线宽的研究，从耦合波方程出发，理论上解释了未泵浦掺铒光纤压窄光纤激光器线宽的原理，分析了影响该作用的主要因素是未泵浦掺铒光纤中相对传输的光干涉形成的驻波：驻波越强，压窄效果越好，相反当没有驻波时，没有压窄效果，在实验上通过在激光器腔内加入法拉第旋转镜使驻波消失，同时压窄效果消失，从而验证了理论分析的正确性。

We found out one kind of new orange-red long afterglow material La2O2S: Eu3+, Mg, Zr.2 In the phosphor Gd2O2S, Mg, Ti which was prepared by high-temperature solid-state method, the orange afterglow phenomenon can be seen after illuminated with UV light.3 Using the high-temperature solid-state method, Gadolinium oxysulfide phosphors doped with rare earth ions were synthesized. We can observe the red or orange phosphorescence in Gd2O2S doped with Eu3+, Sm3+, Tm3+, Yb3+, Dy3+, Er3+, Nd3+or Ho3+. This is a new result of the long afterglow phosphors research.4 Using the microwave radiation method, the new Sm3+ doped gadolinium oxysulfide phosphor, which has the orange-red long afterglow emission after illuminated with UV light or visible light, was synthesized for the first time.5 In fluorescent materials YOX doped with europium ions, the long afterglow phenomenon wasnt observed but the blue luminescence of Eu2+ and red luminescence of Eu3+ are simultaneously examined. This is a new result of the valence stability and change of Eu2+ in yttrium oxyhalide .We systematically studied the effects of the host, addition agents and reaction atmosphere on the valence change and fluorescence property of europium ions.

经过系统的研究总结得到以下的结论与成果： 1采用高温固相反应法合成了一系列稀土离子掺杂的硫氧化镧发光粉，发现了该体系中Eu~(3+)的长余辉发光，从而得到一种迄今未见文献报道的红色长余辉发光材料：La_2O_2S：Eu~(3+)，Mg，Zr； 2在Gd_2O_2S，Mg，Ti磷光粉中观察到橙色的长余辉发光现象； 3采用高温固相反应法合成了一系列稀土离子掺杂的硫氧化钆磷光粉，在掺杂Eu~(3+)、Sm~(3+)、Tm~(3+)、Yb~(3+)、Dy~(3+)、Er~(3+)、Nd~(3+)、Ho~(3+)的Gd_2O_2S中观察到红色和橙色长余辉发光； 4首次采用微波法合成了Gd_2O_2S：Sm~(3+)，Mg，Ti磷光粉，该磷光粉经紫外或可见光激发后呈现明显的橙红色长余辉发光； 5在YOX中同时观察到Eu~(2+)和Eu~(3+)的发射，系统研究了基质、添加剂及反应气氛对Eu价态和发光的影响。

A flat high efficiency super-broadband source was presented. We achieved a C+L-band superfluorescent source, in the region from 1524. 0 to 1600.4nm, the power of the ASE are over -12. 0dBm and the ASE profile excursion is only ±1. 4dB in the region from 1539. 2 to 1600.4nm. The power of the ASE is 22. 1mW and the power conversion efficiency is 18. 8%. 9. The amplification characteristics of thulium-doped fiber amplifier had been studied using the basic theory for fiber amplifier. The connection between the Tm-doped fluoride fiber and silicon fiber was accomplished, and we studied the TDFA and the reason that the expecting results hadn't achieved had been analyzed. The assumption of the Er-Tm-co-doped silicon fiber had been presented, and we studied the Er-Tm-co-doped silicon in cooperation with the correlative corporation, some results had been got and the further studies are carried on.

实验结果得到了覆盖C+L-波段的超荧光光源，在1524.0-1600.4nm波长范围内，自发辐射谱的功率均高于-12.0dBm；在1539.2-1600.4nm波长范围内，自发辐射谱不平坦度为±1.4dB；荧光总功率为22.1mW，功率转换效率为18.8%； 9、应用光纤放大器的基本理论，理论分析和研究了掺铥光纤放大器的放大特性；解决了氟化物掺铥光纤与硅基光纤的连接问题，进行了TDFA的实验研究，分析了没有得到预期结果的原因；最后提出了铒-铥共掺硅基光纤的构想，并与有关单位合作，共同研制了铒-铥共掺硅基光纤，得到了一些前期结果，进一步的研究仍在进行当中。

In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.

在一些实施方案中，渐变半导体缓冲层位于隐埋氧化物层下面，而在其他实施方案中，包含掺杂有B或C中至少一种的Si的掺杂半导体层位于隐埋氧化物层下面。

Company and Beijing University Wide Bandgap Semiconductor Research Center, Sun Yat-sen University Semiconductor Research Center, set up lighting a long-term partnership to jointly develop semiconductor lighting system; the company's lead director is currently the country,"semiconductor lighting technical standards working group" members, Shenzhen Science and Technology Committee of Experts on senior evaluation experts, Shenzhen City, Illuminating Engineering Society of senior experts.

公司与北京大学宽禁带半导体研究中心，中山大学半导体照明研究中心建立了长期合作伙伴关系，共同研发半导体照明系统；公司的首席董事目前是国家"半导体照明技术标准工作组"成员、深圳市科技专家委员会的高级评审专家、深圳市照明学会的高级专家。

There is no obvious relation between temperature and semiconductor intrinsic properties. The passivation film represents the n-semiconductor characteristic in the potential interval of -0.5~0.1V, the p-semiconductor characteristic in the potential interval of 0.1~0.9V, and the n-semiconductor characteristic in the potential interval of

温度对于316L不锈钢钝化膜的半导体本征性质没有根本的影响：在-0.5~0.1V电位区间内钝化膜呈p型半导体特征；在0.1~0.9V电位区间内钝化膜呈n型半导体特征；在0.9~1.1V电位区间内钝化膜呈p型半导体特征。

According to Semiconductor Industry Association of United States,"semiconductor industry is the multiplicator to the US economy". On the one hand, semiconductor industry puts other industries to shame, while on the other hand it is a precondition to the development and prospers of other industries. SIA also points out that essentially, it is the semiconductor that stimulates the progress of electronic products.

美国半导体工业协会称"美国半导体工业是美国经济的倍增器"，并指出半导体是一种使其他所有工业黯然失色，又使其他工业得以繁荣发展的技术，半导体在本质上驱动着所有电子产品的进步。

So it was last week in Selma , alabama.

上星期在亚拉巴马州塞尔马市发生的事件也是这样一个转折点。

The group also spearheads various social programs in China.

该组织还带头参与中国的各种社会活动。