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The coated article includes a glass substrate, a coating of an antimony doped tin oxide deposited on and adhering to the glass substrate and a coating of fluorine doped tin oxide deposited on and adhering to the surface of the coating of antimony doped tin oxide.

该涂敷制品包括玻璃底板、沉积和附着于该玻璃底板的锑掺杂的氧化锡涂层和沉积和附着于该锑掺杂的氧化锡涂层表面上的氟掺杂的氧化锡涂层。

RO_2·8% Y_2 O_3 was deposited by rf magnetron sputtering on NiCrAlY bond coat,thermal cyclingand fused salt effect experiments were made under the condition of 1100℃ room temperature 1100℃ cold water , and 900℃ room temperature,and were investigated by XRD and SEM,The results showthat ZrO_2·8% Y_2 O_3 deposited appears mainly as cubic and a little monoclinic phase and tetragonalphase.

将ZrO_2·8％Y_2O_3用射频磁控溅射技术沉积在NiCrAlY底涂层上，进行ll00℃→室温，1100℃→冷水和900℃→室温等热周期和熔盐作用的试验。随后进行X－射线衍射分析和扫描电镜（8EM）观察。结果表明，沉积态的氧化锆层主要为立方相和少量单斜相及四方相。

Less severe inner oxidation of the bond coat of the irradiated TBCs is observed in many locations, where less oxidation products extended into the bond coat, and about 12 wt.% less oxygen in the thermal growth oxide than that of the as-deposited TBCs after cyclic oxidation at 1050 °C X1 h. The observation results are consistent with the result that the oxidation rate of the irradiated TBCs is lower than that of the as-deposited TBCs from the cyclic oxidation curves at 1050 °C X1 h.

在1050℃×1h循环氧化条件下，经HIPIB辐照热障涂层与原始样相比，仅有少数区域观察到比较严重的氧化和少部分氧化物伸入到粘结层内，形成TGO的氧质量百分比含量约低12%，与其氧化动力学曲线反映的经辐照样粘结层氧化速率低于原始样结果一致。

Thermal barrier coatings consist of an electron-beam physical-vapor deposited NiCoCrAlY bond coat and 7 wt.% yttria partially stabilized zirconia top coat with a tetragonal phase. The YPSZ top coat shows a columnar grains forming dense clusters with gaps among grain clusters. The roughness of the as-deposited ceramic top coat is relatively low, but some spots of prominent growth defects can be observed. Such defect is a bundle of zirconia columns.

采用EB-PVD方法沉积热障涂层，其粘结层为NiCoCrAlY，陶瓷层为7wt%Y_2O_3部分稳定的ZrO_2，其表层为单一的四方ZrO_2相，其表层比较致密，但有一定的粗糙度，表面存在一些凸出来的斑点状ZrO_2柱状晶，柱状晶粒簇拥成团，团簇间存在间隙。

Before his death, he deposited one truck box with a security company here in Abidjan Cote d'Ivore containing the sum of Five Million United States Dollars Only ($5m.usd.) the the security company doesn't know the contents of the metal safe box is money, he deposited it as Family Valueables belonging to his foreign business associate abroad.

在他死之前，他存放的1辆卡车与箱保安公司在这里阿比让科特迪瓦ivore含有的总和500.0万美元为单位只（$ 5m.usd ），保安公司，不知道内容金属钱箱就是金钱，他存入家庭valueables属于他的外交业务协理国外。

It was found that sialon thin films deposited in ar and n2 atmosphere have higher relative dielectric constant, dielectric dissipation and leakage current density than those deposited in ar and o2 atmosphere.

发现在ar/n2气氛中沉积的sialon薄膜具有较高的介电常数，漏电流密度和介电损耗也稍大。

This indicates that there only exists a local ordering of PcNi stacks on water surface and the long range ordering in the vertically deposited LB film is caused by the dipping process Through a polarizing microscopy study, we have found that the horizontally deposited LB film can only promote a degenerate homogeneous alignment.

这说明酞菁分子列在气—液界面只具有局域序。用垂直提膜法制备的LB膜中的长程序是提膜所致。偏光显微镜观察发现：用水平法制备的酞菁LB膜仅能诱导液晶简并的沿面排列。

If the volcanic clasts were deposited on volcanic slope and/or fluvial plain, they would occur in the 4 faceis mentioned above or in alluvial fan and braid stream. If the volcanic clasts were deposited in lake, they would occur in delta, fandelta, shallow-deep lake, and swamp.

火山物质堆积在火山斜坡以及前方的冲积平原上，往往以火山碎屑岩相或者冲积扇相、辫状河相保存；它们堆积在湖泊中则为三角洲相、扇三角洲相、较深水相和沼泽相。

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

Nanocrystalline silion have many difference from bulk silicon, such as structure, the capability of optics and photoelectricity. It shows high potential on light-emitting devices, photodetector, optoelectronic devices and sensor. Si-rich silica was deposited by RF magnetron sputtering and the film dopped with aluminium is deposited too.

本文采用射频磁控溅射方法制备富硅二氧化硅薄膜，并在此基础上掺入单质铝，经高温退火，自组装生长纳米硅颗粒，并对薄膜进行了拉曼散射、X射线衍射、扫描电镜、傅立叶红外吸收光谱和光电子能谱的测定，对吸收光谱也进行分析。

If you are unfortunate enough to the lovelorn, please tell me, I will help you out, really, please contact me!

如果你不幸失恋了，请告诉我，我会帮助你摆脱困境，真的，请联系我啦！

China's plan to cut energy intensity by 20 percent and pollutant discharges by 10 percent between 2006 and 2010 is a case in point.

中国计划在2006年到2010间降低20%的能源强度和减少10%的主要污染物排放，就是一个这样的例子。