查询词典 atom structure

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The first part is preface, on the basis of expounding the background, the purpose, the meaning and the thinking of the thesis study, briefly introduce the research achievements of domestic and international urban spatial structure; the second part is summary, expatiate on the connotation, component, research span and space type of urban spatial structure; The third part is theory foundation, mainly introduce the three classical models of city spatial structure in the west country (concentric circles mode, fan-shaped mode and multi-core mode) and the relative city development theories (growth pole theory, dot-axis theory, core-fringe theory, metropolis circle theory and city space evolution theory); The fourth part is general situations of study region; The fifth part is the analysis of Lanzhou city spatial structure evolution, along the historical venation Of city development, on the basis of analyzing industrial structure change, focus on and sumup the characteristics of spatial development and form, meanwhile, analyze factors which influences the spatial development; The sixth part is the analysis of Lanzhou city spatial development trend, put forward the development models of Lanzhou city spatial structure from three space aspects(the core city, the city, region) in the future, they are group gobbet structure, fingers structure, circle structure; The seventh part is to mainly put forward the development strategies for the different spatial structure models.

第一部分为前言，在阐明论文研究背景、目的及意义、思路的基础上，简要介绍了国内外城市空间结构相关研究成果；第二部分为概述，对城市空间结构的内涵、组成要素、研究尺度及其空间类型作以介绍；第三部分为理论基础，主要是对西方城市空间结构的3大经典模型(同心圆模式、扇形模式和多核心模式)以及与本研究相关的城市空间发展理论(增长极理论、点轴理论、核心——边缘理论、都市圈理论和城市空间演化理论)的介绍；第四部分为研究区概况，主要是对研究区域范围的界定及其社会经济发展概况介绍；第五部分是兰州城市空间结构演化分析，顺着兰州城市发展的历史脉络，在分析产业结构变动的基础上，着重对城市空间发展及其形态特征进行归纳总结，并分析了空间发展的主要影响因素；第六部分是兰州城市空间发展趋势分析，从中心城市、市域、区域3个空间层面上提出未来兰州城市空间结构的不同模式，即组团结构、指状结构、圈层结构；第七部分是城市空间发展策略，针对不同的城市空间发展模式提出一些对策建议。

Engineering geological structure classification is divided into macro-, fine-, and microstructure. Macro-structures include alluvium predominated structure, multiple-binary-rhythm structure, thick boulder and gravel structure, saccate buried valley structure and tremendous composite structure, fine structures homogeneous structure, stuffed structure, porphyro-structure, and space frame structure, microstructures cemented, semi-cemented and loose texture.

利用第四纪构造与气候环境演变控制论的观点，在成因分类的基础上，对覆盖层进行了结构工程分类，按沉积相的不同组合特点分为冲积为主的结构、多重二元韵律结构、厚层漂卵石层结构、囊状槽谷结构、巨厚复合加积结构等五种类型；按颗粒组成和结合状态，分为均匀型、充填接触型、斑状型和架空型四种细观结构；按胶结成岩状态分为胶结、半胶结和松散三种微观结构。

How did the synthesis elaborate Bohr according to the hydrogen atom spectrum experiment rule and Planck, in Einstein's quantum theory introduction atom, thus draws out the energy level rule, the Bohr atom theory's success has triggered the people to the atomic phenomenon and the atomic structure widespread deep research, promoted the atomic physics development.

综合论述了玻尔如何根据氢原子光谱实验规律并将普朗克、爱因斯坦的量子理论引入原子内部，从而引出能级规律，玻尔原子理论的成功触发了人们对原子现象和原子结构的广泛深入研究，推动了原子物理学的发展。

A new organic compound, trans-2--5-dimesitylborylthiophene (abbreviated as DMASBT, 5) with dimesitylboryl, dimethylamino and styryl-thiophene as electron acceptor, electron donor and conjugate bridge respectively, was synthesized. Its crystal structure determined by X-ray diffraction method indicates that the B-C bond between B atom and it bridge is obviously shorter than those of between B atom and mesityl groups. This remarkably strengthened B-C bonding can be regarded as an evidence of additional p-7t conjugation between the B atom and n bridge.

合成了以含硼基团为电子受体，以二甲胺基为电子给体，以苯乙烯基噻吩为共轭桥的新化合物2-[（4'-N，N-二甲胺基）苯乙烯基]-5-二米基硼-噻吩 trans-2-[(4'-N， N-dimethylamino) styryl]-5-dimesitylboryl-thiophene（简写为DMASBT，5）。X射线衍射方法测定其单晶结构表明，硼原子与π共轭桥之间的硼碳键相对于其它的硼碳键明显缩短，硼与π共轭桥之间存在除了σ键之外的p-π共轭作用。

It was shown by further research that the formed tungsten oxide had an obvious layer-like structure, where from outer to inner layer the valence of tungsten increased and the reduction degree decreased. The carbonization of W depended on the replacement of W atom at the center of the body-centered cubic by C atom and the minor adjustment of C atom position and the lattice parameters.

深入研究表明，氧化钨碳还原颗粒具有明显的层状结构，自外到内钨的化合价递增，还原程度降低；钨的碳化是碳原子替换体心立方钨晶胞的中心钨原子，然后碳原子转换到钨原子点阵间隙再经晶胞常数微调而形成。

The results show: the strongest bond is the Al-Al bond in the segregated cell without containing vacancy, where the Al atomic covalence radius is greater than that of Li atom in the cell; while the strongest bond is the Al-Li bond in the segregated cell containing vacancy, and the Al atomic covalence radius in the cell is less than that of Li atom. Since the difference of electronagativity between the Al and Li atoms is obvious, it is inclined to formed the Al-Li segregated cell of short range order structure in the condition of vacancy present. The short range order structure containing vacancy is probably the embryo or precursor structure of the metastable phase δ′(Al3Li). Because the strongest covalent bond in the Al-Li-vacancy segregated cell in alloy formed in quenching is the main strength reason for supersaturated solid solution of alloy. The bond net of succeeding precipitation of δ′(Al3Li) has the picture of anisotropic Al-Al bonding and the bond intensity enhanced. Since the δ′(Al3Li) is coherence with matrix, the bond net strength is enhanced by the precipitation of δ′(Al3Li) and so strengthen the alloy.

计算结果表明：不包含空位的偏聚晶胞的键络最强键为Al—Al键，其中Al原子的共价半径较Li原子的共价半径要大；而含空位的偏聚晶胞的最强键为Al—Li键， Al原子的共价半径要比Li原子的共价半径要小；在空位存在的情况下，由于Al原子与Li原子的电负性相差明显，促使Al和Li原子结合，倾向形成Al-Li短程序结构偏聚区，这种含空位的短程序结构很可能就是δ′(Al3Li)亚稳相的前兆结构和生长胚胎；由于Al-Li-空位有序偏聚晶胞的Al—Li键络比基体键络要强许多，因此，淬火过程中合金生成的Al-Li-空位偏聚晶胞对合金过饱和固溶体起主要强化作用；后续析出的δ′(Al3Li)亚稳相键络各项异性显著，键络强度明显提高；由于Al3Li与基体共格，其大量均匀弥散析出起到提升基体整体键络强度，同样对合金产生强化作用。

The results show: the strongest bond is the Al-Al bond in the segregated cell without containing vacancy, where the Al atomic covalence radius is greater than that of Li atom in the cell; while the strongest bond is the Al-Li bond in the segregated cell containing vacancy, and the Al atomic covalence radius in the cell is less than that of Li atom. Since the difference of electronagativity between the Al and Li atoms is obvious, it is inclined to formed the Al-Li segregated cell of short range order structure in the condition of vacancy present. The short range order structure containing vacancy is probably the embryo or precursor structure of the metastable phase δ'(Al3Li). Because the strongest covalent bond in the Al-Li-vacancy segregated cell in alloy formed in quenching is the main strength reason for supersaturated solid solution of alloy. The bond net of succeeding precipitation of δ'(Al3Li) has the picture of anisotropic Al-Al bonding and the bond intensity enhanced. Since the δ'(Al3Li) is coherence with matrix, the bond net strength is enhanced by the precipitation of δ'(Al3Li) and so strengthen the alloy.

计算结果表明：不包含空位的偏聚晶胞的键络最强键为Al-Al键，其中Al原子的共价半径较Li原子的共价半径要大；而含空位的偏聚晶胞的最强键为Al-Li键，Al原子的共价半径要比Li原子的共价半径要小；在空位存在的情况下，由於Al原子与Li原子的电负性相差明显，促使Al和Li原子结合，倾向形成Al-Li短程序结构偏聚区，这种含空位的短程序结构很可能就是δ'(Al3Li)亚稳相的前兆结构和生长胚胎；由於Al-Li-空位有序偏聚晶胞的Al-Li键络比基体键络要强许多，因此，淬火过程中合金生成的Al-Li-空位偏聚晶胞对合金过饱和固溶体起主要强化作用；后续析出的δ'(Al3Li)亚稳相键络各项异性显著，键络强度明显提高；由於Al3Li与基体共格，其大量均匀弥散析出起到提升基体整体键络强度，同样对合金产生强化作用。

In the 2A1 distorted trigonal bipyramid structure ,the single non equivalent Ga atom has the population of 4s 4p ,while the two equivalent Ga atoms have the population of 4s 4p .this compares with a Ga population of 4s 4p in the undistorted D3h structure ,hence the jahn-teller distortion causes depletion of the charge density on the 4s orbital of the non-equivalent Ga atom, and enhancement of charge density on the 4s orbital for the two equivalent atoms .an opposite trend is observed for the 4p orbitals of these Ga atoms .the P population for the two equivalent atoms is 3s 3p .the populations of the other 2B1 state with the edge-capped tetrahedral structure are similar with the exception that all three Ga atoms have similar but not identical populations .

在2A1被变形的三角bipyramid结构，唯一非等效Ga原子有4s 4p的人口，而二个等效Ga原子在未变形的D3h结构有4s 4p 。this的人口和4s相比4p的Ga人口，因此jahn出纳畸变在non-equivalent Ga原子的4s轨道导致电荷密度的取尽，并且电荷密度的改进在4s轨道为二个等效原子。an在趋向对面对这些Ga原子4p轨道被观察。the人口为二个等效原子是另一个2B1状态3s 3p 。the人口与边缘加盖的四面体结构是相似的P 除之外全部三个Ga原子有相似，但不相同人口。

The final refinement converged to R=0.0686 and 0.0688. In the two complexes, the metal atom is coordinated with one nitrogen atom of alkylamine and three sp^2 nitrogen atoms from NTB and one oxygen atom from H~2O to form a distorted trigonal-bipyramid configuration.

配合物中的金属原子与配体NTB分子中的一个烷胺氮原子、三个sp^2氮原子和一个水分子中的氧形成五配位的扭曲三角双锥构型。

Chimborazo and Cotopaxi, took me by the hand.

越过琴博腊索山和科托帕克西山。

This car is in a good condition.

这辆车的状况很好。