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accumulation layer相关的网络例句

查询词典 accumulation layer

与 accumulation layer 相关的网络例句 [注:此内容来源于网络,仅供参考]

The result shows: in 0~360 kg/hm^2 fertilizer can improve the plant height, dry matter accumulation of maize, nitrogen accumulation, root vigor, leaf nitrate reeducates activity, chlorophyll content and yield, meanwhile the leaves' nitrate reeducates activity, dry matter accumulation and the final output of wheat, root activity and other indicators were significantly correlated; Cultivating under the same conditions and dropping the fertilizer amount from 360 kg/hm^2 to 315 kg/hm^2, the dry matter accumulation will be increased, the roots vigor and leaf nitrate reeducates activity will be strengthened, but the yield are not obviously different in the same treatment.

结果表明:在0~360kg/hm^2的施肥范围内,肥料能显著增加玉米植株的株高、干物质积累盆、叶绿素含量和籽粒产量,提高根系活力、叶片硝酸还原酶活性;同时硝酸还原酶活性、干物质积累量、根系活力和叶绿素含量等指标与玉米最终产量呈显著正相关;在相同的栽培条件下,将施肥量从360kg/hm^2降至315kg/hm^2,植株的于物质积累量增加、根系活力、叶片硝酸还原酶活性增强,但处理间籽粒产量无显著差异。

In order to bring about the spatial depth resolution of the image data obtained, the method according to the invention comprises the following steps: an electromagnetic wave is beamed onto the surface of a photonic mixed element comprising at least one pixel, the pixel having at least two light-sensitive modulation light gates Gam and Gbm and associated accumulation gates Ga and Gb; modulation light gate voltages Uam and Ubm, which are configured as Uam=Uo Um and Ubm=Uo-Um, are applied to the modulation light gates Gam and Gbm; a direct voltage, whose magnitude is at least the same as that of the total of Uo and the amplitude of the modulation voltage Um, is applied to the accumulation gates Ga and Gb; the charge carriers produced in the space charge region of the modulation light gates Gam and Gbm by the incident electromagnetic wave are subjected, as a function of the polarity of the modulation light gate voltages Uam and Ubm, to the potential gradient of a drift field and drift to the corresponding accumulation gate Ga or Gb; and the charges qa and qb which have drifted to the accumulation gates Ga and Gb, respectively, are diverted.

为了使得采用这样一种方法获得的图象数据具有空间深度分辨率,按照本发明的方法包含下述步骤:使电磁波成束在至少包含一个象素的光混合元件的表面上,该象素至少具有两个光敏调制光门G am 和G bm 以及相关的累积门G a 和G b ;将调制光门电压U am 和U bm 施加到调制光门G a 和G b 上,而调制光门电压的构成是U am=U o U m,U bm=U o -U m;将直流电压施加到累积门G a 和G b 上,而直流电压的幅度至少与U o 和调制电压U am的幅度的总和相同;使由入射电磁波在调制光门G am 和G bm 的空间电荷区中产生的载流子经受漂移场的电位梯度,并漂移到相应的累积门G a 或G b ,而电磁波是调制光门电压U am和U bm的极性的函数;已经分别漂移到累积门G a 和G b 的电荷的方向反向。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业,不在行,求高手帮忙。谢谢!具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The wall of archives storehouse is a compound wall consisting of waterproof layer + protective layer + damp course + thermal insulation layer+ heat accumulation layer + interior decorative surface.

档案库房的墙体是一个由防水层+防护层+防潮层+绝热层+蓄热层+内饰面组成的复合墙体。

In addition, some modifications on several computational methods are also presented. Using LMTO method the electronic structure of several systems are studied, and some results are obtained. They are: The ideal Nb (100) surface has three surface states, the multi-layer relaxed surface has two surface states. The surface energy of the ideal surface is higher than that of the relaxed surface, that means that the multi-layer relaxed surface is more stable than the former one, which supports the LEED results. The mono-layer relaxed Ag (111) surface is the most stable one among several" stable surface models"presented by several researchers. The surface energy of Ag (111) surface is higher than that of surface Ag (001), which supports some experimental results such as different reaction rate at different surface orientations for the same material. The surafce states of Si (111) surface not only locate near the Fermi level, but also in the valence band, which agrees well with Cohen's conclusion. Si (111)-H is an effective model for analysing the surface states and H adsorbed on the back surface is a good method for improving the convincingness of the results obtained on thinner slab models. The surface stability depends on three different kinds of MoSi〓(001) surfaces, the surface with mono-layer Si is the most stable one, and the surface with Mo at the first layer is the most unstable one among them. These are consistant with the Kemoda's experimental results. The valence bands of clean or K adsorbed CdTe (111) surface agrees well with the synchrotron radiation studies. The surface of CdTe (111) consists of four kinds of surface models which show different surface electronic structures and different surface structure stabilities. The conclusion agrees well with Wu's experimental work. The different absorbed alkali metals on the CdTe (111) surface give different adsorption characteristics which have relations not only with the valence electrons, but also with the core ones of the alkali metals. The electonic structures of Si-C alloys are different from that of Si-Ge alloys, and the energy band gaps of Si-C alloys do not increase linearly with Carbon concentration, our conclusion supports Alexander's results, but conflicts with Soref's one.

现分述如下: LMTO方法及其应用方面:1)通过对Nb(100)表面电子态分析发现清洁理想表面有三个表面态,多层弛豫表面有两个表面态;表面能大小说明多层弛豫表面更稳定,支持了LEED结果。2)通过对采用不同方法获得的几种不同Ag(111)表面稳定结构的表面能计算分析,给出了单层弛豫表面为Ag(111)表面的最稳定结构;从Ag(111)单层弛豫表面和Ag(001)表面的表面能比较,发现了Ag(001)表面表面能要比Ag(111)小的,表明了同种物质不同表面取向将表现出不同物理、化学性质,这是与实验中得出的结论是吻合的,3)通过对Si(111)表面态分析,不仅发现了Si(111)表面不仅具有居于费米能级附近的悬挂键所对应的表面态,而且还有很多表面态位于价带能量范围内,与Cohen等结果一致,H饱和slab模型背表面相当于增加了slab层的厚度,是一有效的变相增加slab层厚的方法,弛豫表面较清洁理想表面价带谱们低能端的少许移动,预示着总能降低,说明弛豫表面较清洁理想表面稳定。4)MoSi〓具有三种表面,从费米能级上态密度值大小得到单层Si表面最稳定,Mo原子为表层原子的表面最不稳定,双层Si原子表面居中的结论,这与Kemoda等人实验结果是一致的。5)通过对CdTe(111)表面表面电子态、表面结构稳定性及表面H、碱金属吸附的电子结构系列研究,不仅得出了CdTe(111)清洁及碱金属K吸附价带谱与同步辐射光电子谱相吻合的结果,而且发现了CdTe(111)表面具有四类不同原子近邻特征,表现出四类不同的表面结构及电子结构特征:不同表面态分布、不同的表面结构稳定性(表层原子与次层原子成三键有一悬挂键的表面要比表层原子与次层原子成一键有三悬挂键稳定(与Wu等人实验结果一致))、不同的H吸附特性。

The main results of the investigation are as following:(1) Some important criteria for the design of multi-layer structure are acquired: the ratio of the layer thickness to the contact diameter should be controlled to a value about 0.8; increasing the number of the gradient layers and elasticity modulus of the top layer would benefit to the yield strength and the stress status at the interface.(2)By means of molecular dynamics simulations for a indentation and sliding process, it is discovered that dislocations of 45 direction to the surface occur in the surfaces layer, which is correspond to the direction of the plastic flows observed in the macroscopic continuous medium. The irreversible deformation caused by the dislocation and the atom piles at the surface are responsible for the irreversibility of the force response. They are also the main factors for the friction generation. The temperature and the indentation velocity have significant effects on the deformation behaviors of the material of the surface layer. The yield strength would increase obviously if the indentation velocity is greater than 10 m/s.(3)A method to evaluate the fracture toughness of coating by estimating the crack-density functionβof a Wicker''s indentation was proposed. Meanwhile a new surface treatment technology was developed using non-equilibrium plasma.(4)A MD-FE hybrid method and corresponding software was developed to analysis the tribological behaviors for multiplayer system.

研究主要内容和结果有:(1)得到指导梯度膜设计的几个准则:控制膜层厚度与接触半径比在0.8左右为宜;适当增加梯度层层数和顶层弹性模量,有利于提高抗屈服能力和改善界面处的应力状态;(2)通过对嵌入和滑动摩擦过程的分子动力学模拟,发现表层产生一个与宏观连续介质的塑性流动方向观测一致的45 方向位错;位错造成的不可逆变形和表面的原子堆积,是力的响应不可逆性的原因,也是构成摩擦力的主要因素;温度和嵌入速度对材料变形特性有显著的影响,当嵌入速度大于10 m/s时,屈服强度明显增加;(3)提出压痕裂纹密度系数β半定量判定膜层断裂韧性的方法;并开发出表面强化新工艺;(4)开发出分析表面摩擦学特性的MD-FE复合模拟方法和相应模拟软件。

He also suggested the five layers of neurosis that could block individual growth, which were phony layer, phobic layer, impasse layer, implosive layer and explosive layer.

皮尔斯人格思想和理论的贡献主要表现在:首先,它促进了现代人格理论的发展;其次,它促进了存在心理学在美国的发展;再次,皮尔斯以此为基础创建了独特的格式塔疗法。

The results of immuhistochemistry show: compared with normal retina, more 3-NT-positive cells and iNOS-positive cells appear in inner nucleus layer of diabetic retina; less eNOS-positive cells appear in inner nucleus layer and vascular endoderm of diabetic retina; less nNOS -positive cells appear in inner nucleus layer of diabetic retina; more ET-positive cells, ETRA- positive cells, ETRB- positive cells appear in inner nucleus layer of diabetic retina; moreα- synuclein- positive cells appear in ocular cone and rod layer of diabetic retina. Conclusions 1. RFDD-PCR is an efficient technique for research diseases genomics as a mass screening to complete gene expression with the identifying of candidate gene related to disease.

免疫组织化学结果显示:13-NT和NOS:与正常视网膜相比,8周糖尿病大鼠视网膜中,INL的3-NT和iNOS免疫阳性细胞明显增多,INL和血管内皮层的eNOS阳性细胞明显减少,INL的nNOS阳性细胞也明显减少;2ET及ETR:与正常视网膜相比,8周糖尿病大鼠视网膜中,ET、ETRA、ETRB免疫阳性细胞明显增多,增多的阳性细胞主要集中于INL,而在血管内皮层增多不明显;3α-synuclein:与正常视网膜相比,8周糖尿病大鼠视网膜中,α-synuclein免疫阳性细胞明显增多,增多的阳性细胞主要集中于视网膜视锥视杆层。

In this paper, as a case of Karamay, we have studied on space-time changement of soil quality in oasis of arid area. We measured quality for different land use types and years in same type by combinativing field sampling for Karamay in Xinjiang and analysis in laboratory, which is directed by former theory of soil quality. Then we did integrated evaluation of soil quality for different land use types, and had drew some conclusions as followed: In four land use types, the soil bulk density of layers(0~15cm) for farmland and tree land is bigger than the other land use types.The organic matter of every layer in manpower Tamarix Bulrush land is bigger; organic matter of Tamarix Bulrush land release efficiency nitrogen which result ration of C/N is higher; total nitrogen of all layers in farmland variety great as being effected by mass use of nitrogen in agriculture; deadwood and defoliation of tree、shrub and bulrush pooled in 5cm layer to result that quick nitrogen is the biggest among all layers. The total salt of nature shrub tree land for every layer being bigger than farmland explain that nature shrub thee land strongly stand salt and farmland for basification in this area; that the nutrient of face layer is bigger than the ground layer may be explained by that vegetation gather nutrient to be stored in deadwood and defoliation.

本文对以克拉玛依为例,对干旱区绿洲土壤质量的时间空间变化进行研究,在有关土壤质量的研究理论指导下,通过田间调查取样和室内分析相结合的方法,对新疆克拉玛依市农业开发区的不同土地利用方式及同一土地利用方式下不同利用年限土样土壤理化性质进行测定,从而对新垦绿洲不同土地利用类型土壤质量进行综合评价,结果如下:四种土地利用方式中,农地、乔木林地表层(0-15cm)土壤容重较大;各土层人工柽柳芦苇地的土壤有机质含量均较大;柽柳芦苇地的有机质在矿化过程中所释放出有效氮,导致柽柳芦苇地的C/N比例较高;受到农业耕作使用大量氮肥的影响,农地各土层全氮含量变异较明显;乔木、灌木及芦苇的枯枝落叶主要集中在5cm范围之内,导致几种土地利用方式类型下该层土壤速效氮最大;天然灌木林地的土壤总盐在各层均较大,其次是农地,说明天然灌木林地的高耐盐能力,以及该区农业生产用地的土壤盐碱化程度较重。

A silicon based piezo-electricity socle girder miniature electric generating apparatus is provided with a silica fixing frame, an oxidizing layer, a platinum/titanium lower metallic layer, a piezo-electricity PZT layer, a platinum/titanium upper metallic layer, an electrode insulation protection layer, and a vibrating base; the structure of the silica fixing frame combines the monocrystal silicon wet method etching and dry-etching to process, whose structure is integrated as a whole, and the center part of the structure is in a socle girder shape, which includes a silicium socle girder and a free end mass block; the piezo-electricity power supply device uses a micro-machining technique to integrally machine, and can realize the integration of the power supply and the microelectronic devices.

一种硅基压电悬臂梁微型发电装置,有硅质固定框架1、氧化层2、铂/钛下金属层3、压电PZT层4、铂/钛上金属层5、电极绝缘保护层6、振动底座7构成;硅质固定框架1的结构是利用单晶硅湿法腐蚀和干法腐蚀相结合完成加工,其结构连为一体,其中心部分的结构为悬臂梁形状,包括硅悬臂梁a和自由端质量块b;压电电源装置利用微加工工艺集成加工,能够很好的实现电源、微电子器件集成。

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推荐网络例句

There had been a moment during the breakfast meeting, though, after the backslapping and the small talk and when all of us were seated, with Vice President Cheney eating his eggs Benedict impassively and Karl Rove at the far end of the table discreetly checking his BlackBerry, that I witnessed a different side of the man.

那次早餐会期间,在表示过关心和寒暄以后,我们所有人坐了下来,我注意观察了一下,副总统切尼面无表情地吃着班尼迪克蛋(Eggs benedict,源自美国,以英式松饼、火腿、水煮蛋以及荷兰酱组合而成),卡尔。罗夫在餐桌的远端谨慎地经常查看他的黑莓手机,我目睹了他所不为人知的一面。

Talk Undelete failed; someone else may have undeleted the page first.

Talk 无法删除选定的页面或图像(它可能已经被其他人删除了)。

When you leave a part of my life.

当你离开了,我只是希望你能幸福在以后的日子里。