查询词典 SOI

The interdigitated SOI DTMOSFET's, and SOI DTMOS-based invertors and ring oscillators are also designed. By fabricating these experimental devices and circuits, a set of submicron thin film SOI CMOS and SOI DTMOS process technology, which can meet the aerospace application requirements, has been developed.

为满足航天用微电子电路的抗辐射、高速、低功耗、高可靠的要求，开展了适于超低压工作的SOI DTMOSFET的研究工作，对DTMOS器件的微观工作机理进行了分析和讨论，揭示了SOI DTMOS器件电学性能优于常规SOI MOS器件的物理本质，以及DTMOS器件与电路在航天领域的巨大应用潜力。

A novel SOI high voltage device with a compound dielectric buried layer is proposed,and an analytical model for its electric field and potential is established.A unified criterion of RESURF condition for CDL SOI and a uniform dielectric buried layer SOI device is given.

提出复合介质埋层SOI(compound dielectric buried layer SOI，CDL SOI)高压器件新结构，建立其电场和电势分布的二维解析模型，给出CDL SOI和均匀介质埋层SOI器件的RESURF条件统一判据。

In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%.The on-state resistance is lowered by 24% because of the higher impurity concentration of the SOI surface.

采用这种方法制得的SOILDMOS的纵向击穿电压提高了43%，导通电阻降低了24%，这是因为它的表面浓度更高。

However, the implantation of silicon for SIMOX SOI materials increased the density of initial fixed oxide charge in the BOX, which would bring some negative effect on performance of SOI devices.

但是，注硅工艺在BOX层中引入了一定量的初始固定正电荷，对器件的特性带来了负面影响。

High voltage SOI devices investigated in this thesis are key devices for high voltage SOI SPIC.

本课题所研究的局域电荷槽结构和复合结构高压SOI器件是高压SOI SPIC中的关键器件，是国防科技重点实验室基金试点项目。

High voltage SOI lateral MOS devices studied in this paper are early application work for SOI SPIC.

本课题分析具有局域电荷槽结构的SOI LDMOS的纵向耐压机理，提出界面电荷耐压模型，这是迄今为止所见报道的高压SOI器件理想的新模型。

Lateral high-voltage SOI SOI high voltage integrated circuit device as the cornerstone, because of its lower vertical pressure limits its application.

SOI横向高压器件作为SOI高压集成电路的基石，由于其具有较低的纵向耐压限制了其应用。

By using the LADES, the simulations of thin-film deep submicron SOI/MOSFET has been carried out and many advantages of thin-film SOI/MOSFET have been analyzed.

对薄层深亚微米SOI器件的平衡态和直流稳态进行了实际的二维模拟，从器件物理的角度和载流子的运动机制出发，分析解释了薄层SOI/MOSFET优于厚层和体硅器件的众多特性。

D students, the author has taken research work on the development of LADES-Ⅳ and LINDECIRSIM Ⅱ software package. Using the LADES, the simulation of deep submicron thin film SOI MOSFET's has been carried out, and many advantages of thin film SOI MOSFET's have been analyzed.

在黄敞教授的指导下和前人研究工作的基础上，本文总结介绍了薄层SOIMOSFET器件物理、SOI CMOS集成电路的优良特性以及薄层SOI MOSFET的数值计算方法。

The results showed that,anomalously small SOI and the lag effect of El Nino are good indications to the short-term climate prediction of Xiangtan flooding in flood period.

结果表明，南方涛动指数异常偏负以及厄尔尼诺事件的滞后影响对湘潭汛期洪涝的短期气候预报有很好的指示性。

I had a lovely dog named PiPi, he was one of my best friends.

我曾经有过一只小狗，它的名字叫皮皮，它很善良，它是我最忠实的朋友。

Newly ovulated mouse oocytes were cultured in the CZB medium supplemented with different concentrations of pyruvate before treated for activation or assayed for MPF activity.

我们猜测卵母细胞在不含丙酮酸的条件下老化的更快，并且卵丘细胞可能通过消耗不含葡萄糖的CZB中的丙酮酸从而促进卵母细胞老化。