半导体的

基本解释 (translations)

semiconducting

与半导体的相关的网络例句 [注：此内容来源于网络，仅供参考]

In addition, comparing to the alkali metal catalyst, the Ce overlayer is difficult to be removed even heating to 700K.

此外，和碱金属/半导体的情况有所不同，700K的退火也不能有效地除去半导体界面的稀土金属覆盖层。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Therefore, when Fe2O3 semiconductor doped with acceptor impurities of Ni, the acceptor impurities ionize and lead to the increase of conductive holes in the valence band and hence enhance the conduction capability of Fe2O3 semiconductor.

因此，当Fe2O3半导体中掺入Ni受主杂质后，受主杂质电离，使价带中的导电空穴增多，增强了Fe2O3半导体的导电能力。

We study the field enhancements in the waveguide structures by doped semiconductor material, and analyze their electromagnetic fields for different structures under the plane wave illumination or the short pulse. We design several doped silicon slots cavity and slot chains with large field enhancement, and describe their physical mechanism.

我们研究掺杂半导体波导结构对兆赫波电磁场增益之影响，使用电磁模拟针对不同结构做探讨，并分析连续波和脉冲波之电磁场变化，设计具有强场增益之掺杂半导体的矽狭缝和矽狭缝链之结构，并探讨其物理机制。

So there is interest in developing magnetic semiconductors which will exhibit ferromagnetism.

当前研究稀磁半导体的主要方法是对半导体进行过渡元素的掺杂。

From acoustic wave equation, current continuity equation and boundary conditions, we have solved the interface potential produced by BAWs in interface between piezoelectric solid and semiconductor. The results of YZ LiNb03/n-Si structure with SV wave incidence have been calculated and experimental result has been given. Finally, we have presented some kinds of BAW acoustoelectric convolver structures and analyzed their features.

由声波动方程，边界条件和半导体的电流连续性方程出发，推导出了斜入射体波在压电体/半导体界面产生的界面电势以及通过半导体的作用产生的倍频电势的结果，并且对YZ-LiNb03/n-Si结构，SV波入射的情况进行了计算，给出了部分实验结果，提出了几种可能的体波声电卷积器的结构，并分析了它们各自的特点，理论和实验的结果将为今后这类器件的研制提供依据。

Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors; heterojunction field effect transistors and bipolar transistors; photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

主要内容包括：化合物半导体的特性、制备与制程；异质接面、量子结构和假晶应变层的理论与实际应用；金属半导体接面场效电晶体；异质接面场效电晶体以及异质接面双极电晶体；检光二极体、垂直和平面共振腔镭射二极体、以及其他光电元件。

Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors; heterojunction field effect transistors and bipolar transistors; photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

主要内容包括：化合物半导体的特性、制备与制程；异质接面、量子结构和假晶应变层的理论与实际应用；金属半导体接面场效电晶体；异质接面场效电晶体以及异质接面双极电晶体；检光二极体、垂直和平面共振腔雷射二极体、以及其他光电元件。

Designed a self-reduction reaction to prepare Ⅲ-Ⅴ family semiconductor nanocrystalline. Synthesized InAs nanocrystalline whisker and series of Ⅲ-Ⅴ compound semiconductor, such as InSb, GaSb, InP.

设计了自还原制备Ⅲ-Ⅴ族纳米半导体的反应，成功地合成出InAs纳米晶须，InSb，GaSb，InP等系列Ⅲ-Ⅴ族化合物半导体。

A semi-conductor laser is a ''.'special'.

半导体激光器是一种使用半导体的''。

与半导体的相关的网络解释 [注：此内容来源于网络，仅供参考]

doped：掺杂的

前者改变经掺杂的(doped)金属氧化物半导体的电阻特性,它与温度有密切关系,多用於电子鼻仪器,且已商业化;后者则改变导电型聚合物分子链上的离子或σ键的结合方式,因而改变了聚合物的性质,其中需用毫微科技来处理两电极片间的间隙(10~20μm).

Excellent：卓越的

这奖项认可安森美半导体的卓越电源解决方案,帮助华硕电脑扩充市场份额,加快产品上市时间,降低总成本,从而赢得更多客户. 易(Easy)于学习、工作和玩乐;卓越的(Excellent)即时上网体验;以及完备的(Excellent)无线连结,移动时更显轻快自在.

Extrinsic semiconductor：杂质半导体

杂质半导体(extrinsic semiconductor) 半导体中的杂质对电导率的影响非常大,本征半导体经过掺杂就形成杂质半导体,一般可分为n型半导体和p型半导体. 半导体中掺入微量杂质时,杂质原子附近的周期势场受到干扰并形成附加的束缚状态,在禁带中产生附加的杂质能级.

semiconductor integrated circuit：半导体集成电路=>半導体集積回路

semiconductor injection laser 半导体注入式激光器 | semiconductor integrated circuit 半导体集成电路=>半導体集積回路 | semiconductor intrinsic properties 半导体的本征性质

intrinsic semiconductor：本征半导体

顾名思义:导电性能介于导体与绝缘体(insulator)之间的材料,叫做半导体(semiconductor).本征半导体(intrinsic semiconductor) 没有掺杂且无晶格缺陷的纯净半导体称为本征半导体在绝对零度温度下,半导体的价带(valence band)是满带(见能带理论),

intrinsic semiconductor：本质半导体

掺杂进入本质半导体(intrinsic semiconductor)的杂质浓度与极性皆会对半导体的导电特性产生很大的影响. 而掺杂过的半导体则称为外质半导体(extrinsic semiconductor). 半导体和绝缘体之间的差异主要来自两者的能带(band)宽度不同

semiconductor intrinsic properties：半导体的本征性质

semiconductor integrated circuit 半导体集成电路=>半導体集積回路 | semiconductor intrinsic properties 半导体的本征性质 | semiconductor ionics 半导体离子学

semiconductor intrinsic properties：半导体的本征特性

semi-conductor integrated circuit 半导体集成电路 SCIC | semiconductor intrinsic properties 半导体的本征特性 | semiconductor junction 半导体结

semiconducting：半导电的,半导体的

"semicon ","半导体" | "semiconducting ","半导电的,半导体的" | "semi-conducting cable ","电缆半导电层"

semiconducting：半导体的 (形)

semicolon 分号 (名) | semiconducting 半导体的 (形) | semiconscious 半意识的; 半清醒的 (形)