空穴

The investigation of the electrochemical properties of these polymers reveals that the HOMO levels of PFTP11 and PFTPA were significantly higher than that of PFP due to the introduction of triphenylamine group, suggesting the improvement of hole-transport capability of them.

通过对其电化学性能进行测试可知由于三苯胺基团的引入聚合物的HOMO能级明显提高，这意味着聚合物的空穴传输能力得到了有效的改善。

Results of UV spectrum and cyclic voltammography showed that the introduction of triphenylamine into polymer main chain did not affect its optical and electrochemical properties so much, indicating that the polymer is a promising hole-transport material.

实验结果表明，这一聚合物具有良好的溶解性，高的玻璃化转变温度，而且4-叔丁基三苯胺在引入聚合物主链后仍然保持了其光学及电化学活性，作为空穴传输材料具有潜在应用价值。

Strained Si PMOSFET with Polycrystalline SiGe gate can enhance its performance for improvement of carrier mobility and turnable threshold voltage without impurity scattering to carrier.

应变Si pMOSFET以多晶SiGe做栅，既能提高空穴的迁移率，又能调节器件阈值电压而不会对载流子引入杂质散射，因而提高了器件性能。

Furthermore, when several bands near the Fermi surface are taken into account, we find that the interband gaps within the unoccupied bands are generally smaller than those of the occupied bands, indicating that the electron can hop from one band to another which is much easier than the hole.

而且，当研究费米能级附近的能带时，发现未占有带的带隙总体上要小于占有带的带隙，这表明在考虑声子参与的情况下，电子在带间的跳跃要比空穴容易得多。

The results showed porous silicon exhibited the electrode with porous structure in the more position potential and analogized a plate electrode at the more negative potential.

在氧化还原电位较正的〓S〓O〓和H〓O〓电解液中，在阴极极化时氧化剂向多孔硅价带注入了空穴导致多孔硅产生电致发光。

It was found that the DAPS shift of La was associated with 4f energy change under the influence of 3d hole-4f electron interaction, and with the change of polarization energy, while the change in DAPS line shape of Ce reflected its valence fluctuation.

并发现La的DAPS峰位的移动主要和3d空穴-4f电子互作用下的4f能级变化有关，另外还和极化能的变化有关。而Ce的DAPS峰形的变化可以反映Ce特有的化合价涨落现象。这一工作深化了对稀土DAPS的认识，有利于APS在以后的稀土研究中的应用。

As theπ-conjugated length of bridging ligand increases, the energies of HOMOs and LUMOs, stabilities of dimers and the largest absorption strength increase whereas the ionization potentials decrease. According to the inner reorganization energy and density of states, we presume the hole-transporting properties of these dimers are better than the electron-transporting.

随着桥联配体共轭长度的增加，HOMO和LUMO的能量、配合物的稳定性以及最大阵子强度增大，然而电离势降低；从重组能和态密度的角度来看，我们认为这些分子的空穴传输性能优于电子传输性能。

It was found that the reactions at electrochemical impregnating process have different order at nickel and platinum base.

在第五章中，应用空穴微电极对阴极电沉积过程的反应进行了研究，发现以铂和镍为基底进行电沉积时发生反应的先后顺序不同。

But the researchers think they can improve their material further by making it even more porous.

不过研究人员认为，可以通过大幅增加空穴的办法改进这种材料。

At this point the material becomes more porous, increasing its surface area and its hydrogen-storing capacity.

在这个温度下，材料空穴变得更多，表面积更大，从而增加了氢气储藏的能力。

I will endeavour to find you some assistance.

我尽力帮你找人帮忙。

At first I only know bruck is the idol of American younglings, afterwards I returned back to Taiwan ,even in Beijing last year ,I saw her poster everywhere, I was so surprised at her charm.

起初我只晓得布鲁克雷德丝是美国少男少女崇拜的偶像，后来回台湾，甚至去年在北京，居然也四处看见她的海报，才惊讶她的魅力之大。