极型

High blood pressure, high blood ester, smoking, drinking, sugar diabetes, carotid sclerosis, fatness, atria quiver, blood vessel inflammation, blood vessel monstrosity, encephalic aneurism and high homocysteine are absolute danger factors, orderliness of living, morever incidence are masculine.

青年型脑血管病发生率的逐渐增高，其发病是一个极复杂的过程，其中高血压、高血脂、吸烟、酗酒、糖尿病、颈动脉硬化斑块、肥胖、房颤、血管炎、脑血管畸形、颅内动脉瘤、同型半胱氨酸增高，都是独立的危险因素，因此应积极早期预防，降低及避免青年型脑血管病的发生。

Main results obtained are as follows:(1) Morphological diversities among/within populations were discussed by analyzing characters such as apical bud, leaf, acorn and cupule.

主要结果如下：(1)表型多样性的研究结果：表型性状的方差分析表明蒙古栎种内表型性状在群体间和群体内差异都极显著(α=0.01)。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

By using the laser-lift-off technique followed by plasma etching process to roughen the surface, the VLEDs with n-GaN surface roughening has been fabricated.

另一部份，则是在垂直式氮化镓发光二极体的表面制造粗化的效果，以来增进光从发光二极体中萃取出的效率，利用乾式蚀刻将表面制造出粗化的效果，再利用标准的黄光微影制成技术，因此成功的制造出n型表面粗化的垂直式氮化镓发光二极体，至於出光强度的增强量会随者表面粗化情况的不同有著30%？

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

The results prove that T*1 S-closed space and T2 S-closed space are identical and that the regular S-closed space and normal S-closed space are the same. Therefore, to make T*1 space X become the complete conditions of S-closed space is the X extremely unconnected H-closed space, while S-closed space X can be measured as the complete condition X of S-closed T1 normal (A1) space.

首先讨论了S-闭空间的分离性，证明T*1型的S-闭空间与T2型S-闭空间是相同的，正则的S-闭空间与正规的S-闭空间是相同的，从而得到要使T*1型空间X成为S-闭空间的充要条件是X为极不连通的H-闭空间， S-闭空间X可度量化的充要条件是X为S-闭的T1型正则(A1)空间。

The direction of correlation between some traits was stable and some were changeable at different environment. 5. GxE interaction was detected using AMMI statistical model.

AMMI模型进行的基因型和环境互作效应分析表明，RILs所有10个性状的基因型、环境以及基因型与环境互作效应均为极显著。

The chemical-petrographic types of these meteorites are presented below.Six are unequilibrated ordinary chondrites,including three H3 and three L3;92 meteorites are equilibrated ordinary chondrites,including 24 H-group(13 H4,10 H5,1 H6),64 L-group(2 L4,44 L5,18 L6) and 4 LL-group(3 LL4,1 LL5);the other two belong to stone-iron meteorites.In 6 unequilibrated ordinary chondrites,chondrules are well-shaped,and olivine and low-Ca pyroxene are commonly zoned and have wide ranges of composition.The olivine and low-Ca pyroxene in the other 92 equilibrated ordinary chondrites have similar composition,respectively,and to some degree it reflected thermodynamics equilibration in olivine and lowCa pyroxene.

并根据矿物-岩石学特征，划分了它们的化学-岩石类型：6块属于非平衡型普通球粒陨石(H3和L3群各3块)；92块属于平衡型普通球粒陨石，包括：H群24块(13块H4，10块H5，1块H6)，L群64块(2块L4，44块L5，18块L6)，LL群4块(3块LL4，1块LL5)；另外两块属于石-铁陨石。6块非平衡型普通球粒陨石保存了原始的岩石学和矿物化学特征，包括：清晰的球粒结构、橄榄石和低钙辉石具有明显的成分环带以及极不均一的化学组成等。92块平衡型普通球粒陨石中的橄榄石和低钙辉石显示出均一的化学组成，表明它们达到了一定的热力学平衡。

Facing these problems, the half-coupled conservation laws of energy for polar continua, conservation law of energy and Hamilton principle for micropolar multifield theories, principle of virtual velocity and dipolar velocity as well as of virtual stress and dipolar stress for solids with microstructure are proposed.

针对这些问题，提出了半耦合型的极性连续统能量守恒定律、微极多场耦合理论能量守恒定律和Hamilton原理与带有微结构的固体理论的虚速度和虚双极速度以及虚应力和虚双极应力原理等。

The unitary current of burst mode was not only dependent on Na concentration in the pipettes but also on the test voltage.

多步阶梯式除极和叙线除极的实验结果首次表明电位变化愈迅速、除极步数愈多，爆发型出现的机率也就愈高。

Chrysanthemum of 10 thousand birthday is lax to edaphic requirement, with the arenaceous qualitative loam with fecund, good drainage had better.

万寿菊对土壤要求不严，以肥沃。排水良好的砂质壤土为好。

He unstepped the mast and furled the sail and tied it.

他拔下桅杆，把帆卷起，系住。