厚度

OCT can quantitatively measure the RNFL thickness and show the difference of RNFL between normal persons and glaucomatous patients.

OCT能区别正常人和POAG患者的RNFL图像特征，并能以μm级的分辨率定量区分正常人与POAG患者的RNFL厚度，随着POAG患者病情的发展，RNFL厚度逐渐变薄，随着RNFL厚度的减少，视野的平均缺损范围逐渐增加。

The type and the size of epidermis cell, epidermis hair, stomata apparatus and inside blade tissue;Ascertaining by measuring the epidermis cell thickness of the stem, the type and density of the epidermis hair,the density of lenticel; the thickness of cortex, phellogen, vascular tissue and pith;And calculate the ratio of cortex and radius, the ratio of vascular tissue and radius, the ratio of pith and radius…….

测定出叶片表皮细胞、角质层和厚角组织厚度，表皮毛、气孔器和叶内组织的类型、大小等；测定出茎的表皮细胞厚度，表皮毛的类型和密度，皮孔密度，皮层、栓皮层、维管组织和髓的厚度，计算皮层与半径之比，维管组织与半径之比，髓与半径之比等。

When the thickness measurer detects a certain exceeding standard thickness , corresponding screws in die lips will act in response to result in effective adjustment and control of thickness

当厚度测量仪检测到某处超过标准厚度，模唇上相应的螺丝会自动反应，有效地调节和控制厚度

Is there a documented system for Synaptics PCB fab drawing requirements (dielectric thickness, copper weights, surface copper, plating thickness, etc.) for microsection verification?

是否有文件规定synaptics PCB的要求（电解厚度，铜箔厚度，铜箔表面，电镀厚度等）进行切片确认？

With the natural logarithm applied to the division of layers of thickness, the division of deformation resistance parameters is carried out according to different layers of thickness to solve the self-learning of rolling force. Then, the method of exponential smoothing is introduced into the model to deal with the deformation resistance parameters of each and every layer of thickness.

模型通过自然对数法进行厚度族的划分，并将用于轧制力自学习的变形抗力参数按照不同的厚度族进行区分，最后模型采用了指数平滑法对各个厚度族内的变形抗力参数进行处理。

The thickness of the metallic layer is in positive correction with the development of phosphorite but in negative correction with the thickness of the stone coal layer.

黑色岩系的底部为厚度不等的磷块岩层，其上为金属层或石煤层，金属层的厚度与磷块岩的发育呈正相关，与石煤层的厚度呈负相关。

The influence of the structure and material parameters on static and dynamic characteristics is studied. The three dimensional static analysis is obtained by the power series expansion method for a piezoelectric composite laminates. Three dimensional distribution of bonding stress, displacement and electric potential are presented. The distributions of electric potential across thickness of two kinds piezoelectric materials are discussed.

对于静态问题，采用三维精确解方法，给出了压电层与基体之间剪应力、位移、电势的三维分布图；讨论了工程中常用的两类压电材料在感知和作动情况下沿压电材料厚度方向电势的分布情况，分析了电势可看作线性分布的条件；讨论了压电层和粘结层的厚度及材料特性变化对压电感知和作动效果的影响，并对压电层的厚度作了优化分析。

Based on different thickness hydroxylation content in quartz sample, the changes of Hydroxyl peak 3675cm^(-1 intensity is obvious of different thickness in quartz sample, and withe increase of Quartz plate thickness, the hydroxyl peak transmittance increases.

通过对石英样品中不同厚度羟基含量分析得出，对于不同厚度的石英样品，羟基峰（3675cm^(-1)左右）的强度变化十分明显，石英片厚度的增加，羟基峰的透射率增大。

The results show that in the range of thickness 0. 2 - 0. 5 mm, the thickness of coating had little effect on the self tensile strength, and the testing data have better repetitiveness.

结果表明，在所测量涂层厚度范围内(涂层厚度 0 。2～ 0 。5mm)，涂层厚度对涂层自拉伸强度影响不大，且试验数据重复性好。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Graf, without question, is the greatest women's player in history.

格拉芙，现在，毫无疑问是女子网坛历史上最伟大的选手。

If not, you will have to look around at all your important data.

如果没有，您将需要检查所有的重要数据。