查询词典 tin crystal

The results showed that in the TiN crystal Cr is in form of solid solution without single CrN phase formed.

结果表明：Ti-Cr-N涂层中的Cr以固溶体的方式存在于TiN晶体中，没有形成单独的CrN相。

The results showed that the crystal structure of the component materials in NbN/TiN, TaN/TiN and TaWN/TiN superlattice films is all faced-center cubic and has an epitaxially grown mode.

结果表明：在NbN／TiN、TaN／TiN和TaWN／TiN超晶格薄膜中，NbN、TaN、TaWN与TiN之间均呈多晶外延生长模式，在界面处形成共格界面，产生协调应变。

Accounting by Scherrer equation, it is showed that the grain size of TiN in (111) and (200) crystal face is less than 20nm at large and the size in (220) crystal face is mostly less than 10nm, forming nanocrystal grain, consequently coming into being surperhard result by grain refinement.

采用Scherrer公式计算出TiN相的(111)和(200)晶面的晶粒尺寸普遍0nm，(220)等晶面对应的晶粒尺寸普遍0nm，形成了TiN纳米晶，从而产生晶粒细化致硬的效果。

And then the TiN crystal particles can act as heterogeneous nuclei to induce the oxynitride glass to crystallize bulkly during heat-treatment.

在玻璃晶化处理时，首先在TiN微晶粒子的周围析出含有Ti、N成分的未知晶相，而后相继析出方石英和α-堇青石。

The results show that the Si3N4 layers are amorphous structure and the TiN layers are crystal in the Si3N4/TiN nano-multilayer films.

研究结果表明，Si3N4/TiN多层膜中，Si3N4层为非晶态，TiN层为晶态。

It was found that the oxidation extent of TiN film enhanced with the heat treatment temperature increased. The concentration of N decreased but the concentration of O increased when the temperature increase. O atoms entered the TiN crystal lattice and fcc TiN_xO_y structure with smaller lattice constant appeared.

研究结果表明，随着热处理温度的升高，TiN薄膜的氧化程度逐渐增大，热处理后生成的薄膜中N的含量逐渐减少，O的含量逐渐升高。O掺入到TiN的晶格结构中，生成晶格常数较小的TiO_xN_y面心立方结构。

The results show that the nanosized tin is β-tin and the tin crystal is a tetragonal lattice structure, the particle size of nanosized tin prepared in the polyglycol solution is smaller than that in the water, and the particles size is smaller than 100 nm.

结果表明，所制备的纳米锡为β-锡，四方晶系，粒度小于100 nm，聚乙二醇溶液中得到纳米锡的粒度比水溶液中小。

The experimental results show that the size of large particles on coatings surface was decreased obviously by N ion beam assisting bombardment, and surface morphology was optimized. Unitary TiN phase was obtained and softer Ti2N phases were eliminated by N ion beam assisted bombard. As the energy of bombard increased, TiN (111) crystal orientation gradually reduced and (200) gradually enhanced. The micro hardness of coatings reinforced too.

结果表明：N离子束辅助轰击，能够有效地减少和降低膜层表面&大颗粒&的数量和尺寸，消除了膜层中较软Ti2N相，得到了单一的TiN相，随着轰击能量的增加，TiN相结构不发生变化，TiN（111）取向逐渐减弱，而（200）取向逐渐增强。N离子束辅助轰击能量的增加，提高了膜层的显微硬度。

The results showed that with the increase of nitride partial pressure in the range of 2. 0～8. 0×10〓Pa, the hardness of NbN, TaN single layer films decreased, but the hardness of TiN films kept unchanged. The crystal structure of TaN films changed from the mixture of tetragonal β-Ta and faced-center cubic δ-TaN to hexagonal TaN and that of NbN films from FCC δ-NbN to hexagonal ε-NbN. The crystal structure of TiN films is FCC in all the range of partial pressure researched.

研究结果表明：在2.0～8.0×10〓pa的氮分压之间，随氮分压的升高，TaN和NbN薄膜硬度下降，而TiN薄膜的硬度值不随氮分压的变化而变化；TaN薄膜的相结构由低氮分压时的正方β-Ta和面心δ-TaN所组成的两相混合物过渡到六方TaN结构，NbN薄膜则由面心立方结构的δ-NbN逐渐过渡到六方结构ε-NbN，而TiN薄膜的晶体结构基本不随氮分压的变化而变化，均为面心立方结构。

Results show that when the thickness is less than 0.7 nm, Si3N4, normally amorphous in deposition state, could form a NaCl-type pseduocrystal structure due to the template effect of TiN crystal layer. Crystallized Si3N4 layers and TiN template layers grow coherently into columnar crystals with (111) preferred orientation. Correspondingly, the hardness of the films was enhanced to a maxim value of 38.5 GPa, showing a superhardness effect.

结果表明，在TiN调制层晶体结构的模板作用下，溅射态以非晶存在的Si3N4层在其厚度小于0.7 nm时被强制晶化为NaCl结构的赝晶体，多层膜形成共格外延生长的（111）择优取向超晶格柱状晶，并相应产生硬度显著升高的超硬效应，最高硬度达到38.5 GPa。

Objective: To study the effect of polycythemia on blood oxygen saturation.

裴蕾目的：观察RBC剧增而引起的高粘血症对血氧饱和度的影响。

Based on SIMPLER algorithm in the curvilinear body-fitted coordinates, the calculations were performed for Pr=0.7, Re=10~1000 on non-orthogonal non-staggered grids which are generated by elliptic equation systems.

采用曲线坐标系下压力与速度耦合的SIMPLER算法，数值研究了周期性渐扩渐缩波纹通道内脉动流动与换热情况，流动Re数的范围为10~1000，Pr数为0.7。