查询词典 thin film

In addition, there was an activity evaluation on TiOa thin film using HA as handle objects. The results showed that TiO2 thin film had a good effect on degradation of HA, and the degradation rate could attain to 52.9% in three hours which was 18.2% higher than that of direct photolysis, but when compared to the TiO2 aqueous suspensions, the degradation rate of TiOa thin film was a little lower.

并以腐殖酸为处理对象，对TiO_2膜进行了活性评价，发现该固定TiO_2膜光催化体系对降解腐殖酸有良好的效果，反应3h，腐殖酸的降解率达52.9％，比直接光解法降解腐殖酸的效率提高了18.2％，但与悬浮态TiO_2光催化氧化系统相比，其降解效率略有降低。

The properties of thin films have been investigated with modern analysis technique, such as AFM, SEM, XRD (X-ray diffraction) and Rocking curve. And the properties of YBCO thin film and its substrate and deposition temperature have been analysed, comparing with LAO substrates crystallization quality, YBCO thin film properties, such as morphology and degree of grain alignment, was concluded to correlate with the crystal orientation uniform of LAO substrate as revealed by XRD.

本文结合AFM、SEM研究YBCO薄膜的表面形貌，XRD、FWHM分析薄膜的结晶情况，并结合成膜温度和基片的质量进行一系列结构与性能的对比研究，发现LaAlO3基片的质量对YBCO薄膜的结构完整性有很大影响，不仅影响了薄膜的c轴取向性，而且影响了YBCO的超导性能。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

It is manufactured under high vacuum conditions use plasma discharger basic theory to uniformity spatter the SiO2 thin film and ITO thin film on the ultra thin float glass.

它是在高真空环境下，运用等离子放电的基本原理，在超薄浮法玻璃上均匀地溅射上SiO2和ITO薄膜而得到的。

Cu doped ZnO thin film can detect 100 ppb propyl alcohol vapor, while Mn doped ZnO thin film exhibits high sensitivity to NH3 and H2O vapor.Furthermore, the photoluminescence properties of ZnO and Tb doped ZnO thin films, heat-treated in different atmospheres, were carried out.

薄膜气敏性研究表明，Ti的掺杂使ZnO膜电阻降低；Cu的掺杂使薄膜对正丙醇的选择性增高，可检测痕量(100 ppb)的正丙醇：Mn掺杂薄膜显示出很好的氨敏和湿敏性能。

However, it has found that sodium ions in TiO2 thin film diffused from the glass substrate during heat treatment have deleterious effects on the photocatalytic activity of TiO2- To develop new ecotypic building and environmental harmony materials and extend the use of the photocatalytic TiO2 thin films in the field of building materials, this thesis presents the preparation and the enhancement methods for the photocatalytic of TiO2 thin film on the surface of soda lime glass.

为发展新的生态建筑材料和环境协调材料，拓展二氧化钛在建筑材料领域的应用，该论文研究了普通玻璃表面TiO_2纳米薄膜的溶胶-凝胶工艺制备和光催化活性的增强方法。

In this thesis, basic manufacturing processes and techniques for integrated ferroelectrics, such as thin film deposition and film patterning, have been studied. Based on these studies, lead zirconate titanate ferroelectric thin film, which has higher piezoelectric constant than normal piezoelectric materials, is used in silicon-based piezoelectric miniature microphone.

本论文深入系统的研究了硅基铁电薄膜的制备方法及刻蚀加工等集成技术，在此基础上创新性地提出将具有优异力电耦合性能的锆钛酸铅铁电薄膜用于硅基微麦克风研制的思想，完成了器件的优化设计，并成功实现了国际上首个铁电微麦克风器件原型。

To the liquid-crystal display from its structure, the principle as well as the classification has carried on the introduction, twists to the row (TN-Twisted Nematic); Ultra distortion to row (STN-Super TN); Double-decked ultra distortion to row (DSTN-Dual Scan Tortuosity Nomograph); The thin film crystal (TFT-Thin Film Transistor), introduced the thin film crystal liquid-crystal display with emphasis.

对液晶显示器从其结构，原理以及分类进行了介绍，扭曲向列型(TN-Twisted Nematic)；超扭曲向列型(STN-Super TN)；双层超扭曲向列型(DSTN-Dual Scan Tortuosity Nomograph)；薄膜晶体管型(TFT-Thin Film Transistor)，重点介绍了薄膜晶体管型液晶显示器。

In this paper, I studied the present methods for analyzing the optical parameters of thin film purposively to solve the problem of semiconductor thin film. Among so many methods, I pick up the reflection method to combine with the genetic algorithm, which is entitled the modern optimizing algorithm. And a new method of simultaneous determination the multi-parameters of semiconductor thin film has been presented.

本文针对半导体薄膜光学参数的测定问题，对目前分析薄膜光学参数的方法进行了较为详细、系统的研究，从众多方法中选取反射光谱法与现代优化算法——遗传算法相结合，提出一种可以同时确定半导体薄膜多个光学参数的新方法。

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

Graf, without question, is the greatest women's player in history.

格拉芙，现在，毫无疑问是女子网坛历史上最伟大的选手。

If not, you will have to look around at all your important data.

如果没有，您将需要检查所有的重要数据。