查询词典 silicon

The tunable photon broad band radio frequency phaser based on a silicon ring resonance cavity comprises a pumping signal light-generating system, a carrier wave light-restraining double-sideband generating system, a silicon ring resonance system and a measuring system; wherein, the silicon ring resonance system comprises a light coupling device and the silicon ring resonance cavity; the output of the light coupling device is connected with the input port of the silicon ring resonance cavity; wherein, the silicon ring resonance cavity is composed of a silicon annulet and a root of a straight waveguide; the air gap distance between the silicon annulet and the root of the straight waveguide is several ten nanometers or several hundred nanometers; the taking characteristic of the silicon ring resonance cavity is the characteristic of a seasonal reject trap; the transmission rate in the position of a resonance wavelength is equal to zero or is very close to zero.

本发明包括：泵浦信号光发生系统、载波抑制光双边带产生系统，硅基环形谐振腔系统，以及测量系统。所述硅基环形谐振腔系统包括一个光耦合器和一个硅基环形谐振腔，光耦合器的输出连接到硅基环形谐振腔的输入端口，其中：硅基环形谐振腔由一个硅基微环和一根直波导构成，硅基微环和一根直波导之间的空气隙间隔为几十至几百纳米，硅基环形谐振腔频谱特征是周期性的带阻滤波特性，在谐振波长处的透射率等于0或非常接近0。

Pereme , separately are 209%,295%,285%; the increasing of accumulating amount separately are 209%,295%,285%; The use of silicon has a tread to rise dry weight of Bermudagrass ,Agrostis Lolium. Pereme ; Under the drought condition , the use of silicon suppressed the reducing of the relative water content of leaf in turfgrass , delaying the time of wither , stress for the 11th day in the drought .compared with water normally and not using silicon ,after use silicon, the RWC of Bermudagrass , Agrostis Lolium. Pereme only separately depressed 14%,16%,32%; Under the drought condition ,the use of silicon can increased the content of proline of Bermudagrass ,Agrostis Lolium. Pereme, stress for the 11th day in the drought and using silicon , compared with water normally and ueing silicon, the content of Pro separately increased 203%,199%,473%;The using of silicon depressing the ET of Bermudagrass and Lolium. Pereme.Under water normally condition, separately depressed 21%,8% at eleven days ;Under drought condition , separately depressed 17%,5%.

施硅增加了草坪草狗牙根、剪股颖和黑麦草的含硅量，分别为209％、295％、285％；积累量分别提高了240％、364％、355％；施硅对草坪草狗牙根、剪股颖和黑麦草的干物质积累有促进趋势；在干旱的条件下，施硅抑制了草坪草的叶相对含水量的降低，延迟了叶片萎焉的时间，在干旱胁华中农业大学2001级时一艳丽硕士学位论文迫第n天，与正CK相比，施硅后狗牙根、剪股颖和黑麦草分别只降低了 14%；16%，32%。；施硅增加了狗牙根、剪股颖、黑麦草在干旱条件下脯氨酸的含量，增强了渗透调节能力，在干旱施硅的条件下，与正51相比，在干旱胁迫第11天，狗牙根、剪股颖和黑麦草脯氨酸的含量分别增加了2叨%、199%、473%；施硅减少了狗牙根和黑麦草的蒸散量在正常浇水的条件下，与正CK相比，第11天狗牙根和黑麦草的蒸散量分别降低了21%、吕%；在干旱的条件下，与干CK相比，在干旱胁迫的第11天，狗牙根和黑麦草的蒸散量分别降低了17%、5%。

The results show that the undissolved silicon particles in the melt become the cores of primary silicon precipitated in solidification and there is a close relationship between the shape of primary silicon and undissolved silicon particles. The growth of silicon follows not only the twin plane re-entrant edge mechanism, but also layer mechanism as well. Meanwhile, the shape of primary silicon also relies on kinetic surroundings, such as the transmitting of solute. At higher overheating temperature, the shape of primary silicon becomes the star-shape and tree-shape.

结果表明：重熔过程中熔体中未溶解的硅相粒子，在凝固过程中可成为初生硅生长核心，并且未熔颗粒与初生硅形状之间存在明显对应关系；初生硅的生长机制不是惟一的，既可以以孪晶凹角机制生长，还可以以层状机制生长，初生硅最终形状还要取决于溶质传输等动力学环境；随着熔体过热温度的升高，凝固组织中初生硅形状由多边形向星形及树枝状转变。

On the silicon substrate an epitomical layer is made,where IC components are formed subsequently.In an CVDprocess,the silicon substrates places in a vacuum crystal tube are first heated to 1,600°C by high-frequency radio power and then H⒉Cl⒉Si and certain gaseous compounds of As or P is injected into the tube to make a deposit of several um on their surface.Ions of As or P are impurity deliberately added to the singl-crystalline silicon structure to supply electrons that transmit "negative"current in the silicon crystals,which is called n-type silicon.Bcan be added as impurity to produce p-type silicon that supplies holes for transmitting "positive"current.Whether a p--type of an n-type silicon substrate is needed depends on what type of transistors is expected to be manufactured on it:n-p-n type of p-n-p type

对硅衬底上的一个epitomical层了，而IC零件形成subsequently.in一个CVD法（化学气相depsition ）过程中，硅衬底的地方在真空晶体管均先加热至1600 ° C时，由高频率的无线电功率，并然后h ⒉氯⒉硅和某些气态的化合物，砷或P ，是注入试管，使存款的几位嗯对他们surface.ions的作为或P是杂质刻意添加到单结晶硅的结构，以供应电子传递的&负面&目前，在硅晶体，即所谓N型silicon.b ，可以增加一条，作为杂质产生的p型硅供应孔转递&积极& current.whether一个P -类型的一个n型硅衬底，是需要靠哪些类型的晶体管预计将在制造上它： NPN型的PNP型

The chemistry behavior research of wollastonite indicated that the silicon-potassium fertilizer has a chemical active in organic acid.The factors affecting manurial effect of silicon-potassium fertilizer are not only soil pH and desilicification,but also content and type of organ in the soil.Wollastonite chemistry behavior indicates that silicic acid can be dissolved out from silicon-potassium fertilizer in chlorhydric acid solution if pH of solution is not smaller than 2. The drop of apparent density,increase of DBP sorptive rate and specific surface for leavings indicate that hydrated silicon oxide is polyporous,and those mineralogic feature presignify that silicon-potassium fertilizer has a role of conservation of both Moisture and Fertility and improving soil structure.After active ingredient releasing,silicon-potassium fertilizer leaves half the substance (non-active ingredient)in soil.

熟料单矿物在酸溶液中的化学行为研究表明，硅钾肥矿物在有机弱酸中的化学活性较好，影响硅钾肥肥效发挥的因素是土壤pH值和土壤的去硅化程度，还有土壤有机质的含量与种类；硅灰石在盐酸溶液中化学行为表明，在反应体系pH不小于2的情况下，硅钾肥矿物大量溶出硅酸根组分；溶解残余物表观密度降低、DBP吸着率和比表面积增加表明水合二氧化硅是以多孔形式存在，为硅钾肥具有保水保肥、改良土壤结构的提供了矿物学依据。

Organic silicon products can be divided into three kinds: organic silicon singles, organic silicon mid-body and organic silicon products. The key to organic silicon industry is to get goodquality organic silicon singles.

有机硅产品分有机硅单体、有机硅中间体、有机硅产品及制品三大类，进入有机硅行业的关键是取得质优的单体产品。

After the project completion, it has 100,000 tons / year organic single silicon productive capability( accounted by the methyl chloride silicon hydride), 45,000 tons/ year organic silicon including 20,000 tons/year silicon oil, 10,000 tons/ year silicon rubber, 6,000 tons /year silicone, 6,000 tons/year silicon hydride resin acceptor, and 3,000 tons/year others.

项目建成后生产有机硅单体10万吨/年，生产有机硅产品4.5万吨/年，其中硅油20000吨/年，硅橡胶10000吨/年，硅树脂6000吨/年，硅烷偶联剂6000吨/年，其它3000吨/年。

Silicon oil fit-into anterior chamber: two crystal eyes, intraocular tension has been controlled by releasing silicon oil , silicon oil fit-into one eye again, silicon oil filling exceed one month, useless of expectant treatment, after checking the reattachment of retina, doing the silicon oil dislodge from anterior chamber and vitreous cavity; there aphakia eyes by prone position and draping hypotensive drug: two iris ambitus excision aperture membrane occlusor eyes by lasering at 6 clock or perforating again., iris ambitus excision at 6 clock by lasing .one by iris ambitus excision affiliation anterior chamber plasty, acuity of vision has been elevated different degree after intraocular tension controlled.

硅油进入前房者：有晶体眼中2眼经前房放油眼压控制，其中1眼硅油再次进入前房，硅油填充亦超过1个月，经保守治疗无效，检查眼底视网膜复位后，同时行前房和玻璃体腔硅油取出术；无晶体眼中3眼经俯卧位加点降眼压药物，眼压控制，2眼虹膜周切孔膜闭者经过激光6点位打孔或重复打孔处理眼压控制，1眼作6点位周切孔重建，1眼行虹膜周切联合前房成形术，眼压控制。96眼眼压控制后，视力均有不同程度提高。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Five novel torsion-mirror optical actuators including double-beam thickness differential structure with single torsional axis, double flexible folded-beam structure with single torsional axis, double-beam vertical torsion comb structure with single torsion axis, four-beam differential compound-micromirror structure with double torsional axis and the combined structure of the four basis forms above, are brought forward. All of these devices could be fabricated by the same silicon micromachining process we have developed. The deformation compensation design with local enhancement for the thin torsional beam which is the key structure of these devices is also put forward to improve the reliability. The three-dimension solid model and two-dimension reduced order model of the torsion-mirror optical actuator are established and then the numerical simulations for evaluating the device characteristics of the statics, dynamics, electrostatic field, mechanical and electrostatic coupling, fluid and solid coupling are carried out to optimize the structure design. Furthermore, three optical fibre clamping structures which could be integrated monolithicly are designed and analyzed to improve the optical coupling capability. 4. Three flexible process flows combined with bulk silicon micromachining and surface silicon micromachining are brought forward to fabricate these novel single-crystal silicon or polysilicon torsion-mirror optical actuators by using the same lithography masks for both SOI wafer and regular silicon wafer. A series of important process experiments are carried out to optimize the process parameters and the process flows. Some novel and typical process phenomena which occurred during the microfabrication are analyzed and then the corresponding solutions are put forward. 5. A MEMS dynamic testing system which exploit blur image synthetic technique, stroboscopic image matching technique, stroboscopic mirau microscopic interferometry technique and microscopic laser dopper vibrometer technique is set up to measure three-dimension and six-freedom micro motions of any MEMS devices with nanometer resolution.

在对硅微机械扭转镜光致动器的光机电特性系统地理论研究的基础上提出了硅微机械扭转镜光致动器的结构设计准则。3、提出了单轴双梁厚度差分结构、单轴双柔性折叠梁结构、单轴双梁垂直扭转梳齿结构、双轴四梁差动复合微镜结构以及以上四种基本结构组合后的衍生结构等五种工艺加工技术兼容的新型的硅微机械扭转镜光致动器，对器件关键结构薄厚度、高耐疲劳扭转梁进行了局部加强的变形补偿设计，建立了器件的三维实体模型以及两维降阶模型，对提出的新结构硅微机械扭转镜光致动器进行了系统的静力学、动力学、静电场、力电耦合和流体固体耦合的建模仿真与优化设计，同时设计并分析了三种可实现单芯片集成的弹性光纤定位夹紧结构。4、提出了组合体硅微加工技术与表面硅微加工技术、兼容同一套光刻版图、可分别基于SOI 晶片和普通Si 晶片、适应于制造提出的各种新结构单晶硅和多晶硅硅微机械扭转镜光致动器的三套柔性加工工艺流程，开展了一系列重要工艺步骤的单项工艺试验，对工艺流程与工艺参数进行了优化，针对加工过程中出现的具有普遍意义的典型工艺问题进行了讨论和分析，并提出了解决方法。5、创新性地将模糊图像合成技术、频闪图像匹配技术、频闪Mirau 显微干涉技术与显微激光多普勒测振技术有机结合，建立起了一套周期运动测量与瞬态运动测量相结合、单点运动测量与全视场运动测量相结合、满足不同MEMS 器件各种动态测试要求的集成的MEMS 三维六自由度微运动精密测量系统。

He became prime minister in 1997 and won international acclaim for his role in the Northern Ireland peace process.

他在1997年成为总理，并且因为在北爱尔兰的和平进程中发挥的作用受到国际社会的赞许。

Mixed Page Sorting Method Using the cuttable user model, this thesis proposes a mixed page sorting method by using cutted user model in server-side and complete user model in client-side.

隐私分级利用的混合式页面排序方法针对个性化搜索中搜索结果排序的问题，本文利用隐私可控开放的用户偏好模型，提出一个在客户端和服务器端分步进行的隐私分级利用的混合式页面排序方法。