查询词典 semiconductor

The first P-type covering layer (61) which composed of P-type nitride semiconductor containing indium and gallium sets contacting with one side of the active layer.

一个由含铝和镓的P型氮化物半导体构成的第一P型覆盖层(61)被设置与有源层的一个面接触。

The second P-type covering layer (62) which is composed of P-type nitride semiconductor containing indium and gallium sets on the first P-type covering layer.

一个由含铝和镓的P型氮化物半导体构成的第二P型覆盖层(62)被设置在第一P型覆盖层上。

The results indicate that the electron performance of the passive film of SS316L formed in PA316 solution is p-type semiconductor.

评价结果为，钝化处理前其耐点腐蚀性等级为Ⅴ级，钝化处理后耐点腐蚀性等级为Ⅰ级。

The measurements of the transport properties indicate that the crystal exhibits a semiconductor behavior with p-type carriers and the thermal activation energy was estimated to be about 0.18 eV.

我们测量了制备样品的电阻率和热电势特性，样品表现出典型的p型半导体行为。经对电阻率和热电势数据的拟合，得到样品的热激活能△=0.16-0.18eV。

Cuprous oxide(Cu_2O) is an important p-type semiconductor with a direct band gap of 2 eV,and has wide applications in solar energy conversion,gas sensors and catalysis due to its unique optical and electronic properties.

氧化亚铜是一种重要的p型半导体材料，禁带宽度为2 eV，具有独特的光学和电学性质，在太阳能转换、气敏器件和催化等领域具有较大的应用价值。

Cuprous oxide (Cu2O) is a direct band gap and is p-type semiconductor with a direct band gap of 2.0 eV, and has been attracted to apply in photoelectric devices and chemical catalysis.

中文摘要氧化亚铜是p-type 直接能隙半导体材，其能带间隙约为2eV，由於材料的优点，使得氧化亚铜在光电设备与化学催化剂的应用上引起相当大的注意。

It was found for the first time in b-FeSi2 based thermoelectric materials that a p-type semiconductor could change to an apparent n-type one, when the temperature was decreased below a critical temperature.

本项目研究首次在b-FeSi2基热电材料中发现"热伏极性"反转现象，即p-型半导体在某个临界温度以下表现为明显的n-型半导体热电特性。

Skutterudites are p-type semiconductor. The high carrier concentration is caused by the substitution of iron atoms to cobalt atoms in skutterudite.

La〓Fe〓CoSb〓热电材料均为P型半导体，具有较高的载流子浓度，大量的载流子是由于方钴矿中铁对钴取代的结果。

CuI is a P-type semiconductor material with 3.2eV bandwidth and stable performance in chemistry and physics. Its resistivity can be changed with concentration, and CuI film is transparent for visible band of light.

CuI是一种高带隙宽度的P型半导体材料，带宽为3.2ev，物理化学性质稳定，制备成本低廉，电阻率可随浓度改变，在可见光范围内透明等优点。

Ca3Co2O6 and Na-doped are p-type semiconductor, whereas Ni-doped Ca3Co2O6 turns into n-type.

Ca3Co2O6及掺Na都是n型半导体，而Ca3Co2O6掺Ni是p型半导体。

There are different types of personal loans available.

有许多不同类型的个人贷款优惠。

The above mentioned teaching model of spiral rising can be used to avoid rigidness in teaching.

上述螺旋式上升的教学模式，可以避免教学形成模式後的僵化现象。