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multiple correlation coefficient相关的网络例句

查询词典 multiple correlation coefficient

与 multiple correlation coefficient 相关的网络例句 [注:此内容来源于网络,仅供参考]

Correlation coefficient of prediction set for the correction model of fat and protein are 0.990 and 0.994, and root mean square error prediction is 0.007 or 0.004, respectively.

所建立的脂肪和蛋白质校正模型的预测集相关系数分别为0.990和0.994,预测均方根误差分别为0.007与0.004。

The performance of the final model was evaluated according to the Root Mean Square Error of Prediction and the Correlation coefficient in prediction and calibration sets.

研究了利用联合区间偏最小二乘法和遗传偏最小二乘法等筛选特征谱区的方法,通过交互验证法确定偏最小二乘模型的主成分因子数和筛选区间,并以预测均方根误差和相关系数R作为模型的评价指标。

The RBFNN model gave a correlation coefficient (R~2) of 0.8464 and root-mean-square error of 0.1925 for the test set.

两种方法的相关系数(R~2)分别为0.8400和0.8642,相应的均方根误差为0.1577和0.1562。

The correlation coefficient (R2) for the LM and SVM was 0.98 and 0.92, and the corresponding root-mean-square error was 0.99 and 2.77, respectively.

两种方法的相关系数(R2 )分别为0.98和0.92,相应的均方根误差分别是0.99和2.77。

Image analysis ; Histogram ; Real-time analysis ; Correlation coefficient ; Sample

图像分析;直方图;实时分析;相关系数;采样

Definite sample thickness; the correlation coefficient between optical density and sample thickness is 0. 956 when the

微密度仪测定的结果为光密度,需对其进行标定,标定结果表明:在样品厚度一定时

In all 10 test sample pairs,the correlation coefficient between the actual and the predicted joint angles is biggerthan 0.9 on either vertical or horizontal plane.

在所有的10组测试样本中,实际关节角曲线和预测关节角曲线的相关系数都大于0.9。

The proposed method [5] is based on the sample correlation coefficient to normalize the signal Gerschgorin radii for source number detection. The second part of this reseach involving and construction of a TI TMS320C54XX [26-28] DSP developed platform. The platform will be used for developing H/W source number detectors.

同时,在第一年计划进行时,即著手於硬体电路的规划与设计,先行完成 DSP 发展平台,结合德州仪器DSP 大学实验室计画[24-25]所提供的简易初学板(TMS320C54X DSP Starter's kit)[23-24],加入自行撰写的开机载入程式,拉出多组重要资料/址线接脚讯号,制完成乙套多功能而价廉的DSP发展平台。

Hierarchical linear modeling is the most frequently used technique for analyzing multilevel data. In this paper, the twelve key issues in multilevel research and/or using HLM software were reviewed, and provided their exact meanings and feasible solutions. The 12 key issues included intraclass correlation coefficient, sample sizes, formation of organizational constructs, centering problems, fixed effect and random effect, estimation methods, goodness of fit index, explained variation, multicollinearity, robust standard error, level one variance equation, and empirical Bayes estimates.

本文针对阶层线性模式在多层次研究上有关於技术、测量与方法论所遭遇的问题,进行文献整理并讨论其实务意涵,并依据使用时机、抽样议题、资料汇总、分析方法、与模式评估与估算等五方面整理出十二项重要议题与解决之道,包括:组内相关系数的意义与判断准则、多层次研究各层的样本数问题、变数聚合成组织层次问题、中心化的意义、固定效果与随机效果的设定、估计法的选择、适配度的比较、解释变异量的计算、多元共线性的分析、强韧性标准误、第一层误差项变异数与实证贝氏估计值的运用。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究,编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系,计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等,对评估MOS型集成电路电离损伤和加固方法研究,以及论文中开展的MOSFETs无损筛选方法研究奠定了基础;分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性,利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流,在不同栅氧厚度下随栅压的变化曲线,计算了热载流子效应造成的阈值电压漂移,研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想,具有重要的参考价值;开展了PN结和双极晶体管电离光电流研究,计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应,计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应,以及基区宽度对NPN晶体管光电流的影响,研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义;在国内首次开展了器件位移损伤的理论研究,分析了辐射产生的缺陷对电性能的影响,计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

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