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The outer neuroblastic layer before it divided to inner and outer nuclear layer and outer complexiform layer and gonglion cell layer showed a temporal PCNA positive which was related to proliferation. The three cell layers had another PCNA positive when finished time changed from outer to inner after their morphologic development basically completed( outer nuclear layer:11~15 days,inner nuclear layer: 8~16 days, gonglion cell layer:16~21 days).

PCNA显示在外成神经细胞层分化为内、外核层和外丛状层之前,和节细胞各有一次和增殖相关的阳性表达。3个细胞层在形态学的分化基本完成后,又出现了一次结束时间是由外向内变化的阳性过程(外核层:第11天至15天:内核层:第8天至16天,神经节细胞层: 16天到21天,这一次阳性表达过程可见到细胞形态向成年形态的转化。

The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si.sup.+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer.

专利简介本发明系关於一种紫外光检测器及制程方法,其主要系在一基板上形成一缓冲层,利用磊晶法在缓冲层上形成一P型氮化镓系层,并接著以离子布植技术将Si+离子适当地布植於该P型氮化镓系层中,形成一N型氮化镓系层及包覆在此N型氮化镓系层中且布植浓度更高的另一N型氮化镓系层,最后在该P型氮化镓系层及第二N型氮化镓系层上分别镀上一环状金属层及另一金属层,以作为欧姆接触层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管,包括P型衬底,在P型衬底上设有P型阱和N型漂移区,在P型阱上设有P型接触孔、N型源及场氧化层,在N型漂移区上设有N型漏及场氧化层,其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层,在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

The results showed that the structure of retina in Lasiopodomys mandarinus exhibited typical structure of vertebrates, including retinal pigment epithelium, rod cone layer, outer nuclear layer, outer plexiform layer, inner nuclear layer, inner plexiform layer, ganglion cell layer, and nerve fiber layer from outside to inside.

结果表明,棕色田鼠的视网膜结构呈典型的脊椎动物视网膜结构类型,由外向内分别为色素上皮、视锥视杆层、外核层、外网层、内核层、内网层、节细胞层、神经纤维层。

Design the structure of high performance Low-E film including its material and thickness of every layer according to basic optical theory. Carry out an innovative work to calculate its optical performance by characteristic matrices and optical admittance. Compare the results with those we get by traditional measurement.3. Prepare Low-E films with RF magnetron controlled reactive sputtering. The result shows that in the visible region (380nm-780nm), the highest transmittance is 82.4% while the average value is 75%. In the NIR region (780nm-2500nm), the average transmittance is 16.2%. These characters can fit the demand of the glass used in architecture and cars, and also in other applications.4. We novelly use the material Titanium as protective layer to solve the problem that Ag layer would disappear when depositing the second TiO_2 layer. As the protective layer, Ti does not increase the number of targets so as to lower the costs. The thickness of the protective layer Titanium is adjusted by controlling of sputtering time. Results shows the Low-E films get the best optical character when the sputtering time of Titanium is 20 seconds5. We novelly proposed a new transmittance quality factor Q=_·(?_-__ to evaluate the performances of Low-E films, which makes it easier to judge the qualities of Low-E film.6. The photocatalysis of Titanium dioxides is researched and introduced into Low-E films. Sb-doped TiO_2 thin films are prepared. Its photocatalysis and hydrophilicity are measured.

论文的工作主要有:1、总结了低辐射薄膜的制备方法,性能,以及国内外最新研究进展和应用,并对两种类型的低辐射薄膜进行了比较。2、从光学基本理论开始,设计了离线低辐射薄膜的结构,包括每一层的材料和厚度,并创新性的用特性矩阵和光学导纳理论计算了该离线膜的光学性能,利用软件对其进行了仿真,与实际制备的薄膜所测量的性能相比较。3、完成在实验室仪器上制备低辐射薄膜,掌握其工艺条件,解决了超薄金属膜的制备问题,所制备的低辐射薄膜在可见光区(380hm-780hm)最高可达82.4%,平均透射率为75%;在近红外区(780nm-2500nm)的平均透射率为16.2%,其性能达到建筑物幕墙玻璃,汽车前挡玻璃等应用标准,并为进一步的大规模生产打下基础。4、针对中间银层在镀上层膜时易被氧化这一工艺难题,本研究创新性的提出用Ti膜作为保护膜,没有增加新的靶材,提高了生产效率,并节约了生产成本。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料;在基质材料上外延生长形成变换叠加的垒层和阱层,在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质,得选择超晶格位置掺杂的p型III族氮化物材料,其中,每个生长周期的步骤为:生长带隙较宽的垒层,同时掺入受主杂质;生长施主杂质或受主杂质δ掺杂层;生长非掺的带隙较窄的阱层;生长受主杂质或施主杂质δ掺杂层;在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火,即得目标产物。

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法,於本研究中并无习知砷化镓欧姆接触层的存在,我们利用金/金铍金属藉由热退火程序,使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层,降低磷化镓与氧化铟锡接触产生之接面能障;另外,该元件在氧化铟锡直接欧姆接触於磷化镓窗层下,除亮度具明显提升外,在稍大电流(20毫安培)元件可靠度测试下,亦未有明显衰减情形发生。

Want to know, the person's skin can be divided into three-layer of cuticular, dermal, subcutaneous tissue about; All maintaining the limits that tastes generation action is in only cuticular layer, in thin thin divided in the cuticular layer that is less than one centimeter 4, quintuplicate cell, be located in the bottommest for base layer, full vivid cell can grow ceaselessly reach dissension, slowly when upgrade is advanced, the cell can squash gradually, at the same time evaporate, nutrient, until most the corneous layer outside, already was flowing do not have the corneous layer cell of life however.

要知道,人的肌肤约可分成表皮、真皮、皮下组织三层;所有保养品产生作用的范围都仅在表皮层,在薄薄不到一公分的表皮层中分了四、五层的细胞,位于最底部为基底层,布满的活细胞会不断生长及分裂、慢慢往上推进时,细胞会渐渐变扁,同时失去水分、养分,直到最外的角质层,就已是平滑却没有生命的角质层细胞了。

Hundreds of kilometers in altitude, according to the distribution of electron density with height, usually divided into D layer, E layer and F layer (F layer during the day is divided into F1 layer and F2 layer).

在数百公里高度以下,根据电子密度随高度分布,通常分为D层、E层和F层(F层白天分为 F1层和F2层)。

The layered video decoding system comprises a base layer decoder for receiving and decoding a base layer video stream; and an enhancement layer decoder for receiving an enhancement layer video stream and the decoded base layer stream, and generating a decoded enhanced video output, wherein the enhancement layer decoder includes: a plurality of inverse discrete cosine transform /IDCT modules; and a selection system for selecting one of the IDCT modules.

分层视频译码系统包括:基本层译码器,用于接收和译码基本层视频流;和增强层译码器,用于接收增强层视频流和所译码的基本层流,并生成译码的增强的视频输出,其中该增强层译码器包括:多个反离散余弦变换模块;和用于选择其中一个IDCT模块的选择系统。

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