查询词典 junction

Acetabular posterior wall was started from top of acetabulum to the junction of acetabular posterior wall and ischium. This area was equally divided into two parts: part A-superior, part B-inferior.

分组：髋臼后壁范围为从髋臼顶点至髋臼后壁与坐骨枝相交处，将其等分为两部分，上部为A区，下部为B区。

In this paper,the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.

本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。

Based on this method,large-area SiNW p-n junction diode arrays also were successfully prepared.

此外，硅纳米线阵列结构具有优异的减反射性能，探索了其在太阳电池中的应用。

At the base and near the p-n junction interface when diode is working under the applied alternating current.

基于p-n结二极管的理想工作状态的基本假定，推导了二极管在交流电下工作时其基区和p-n结分界面附近上的时间常数与二极管空间尺寸、扩散长度、载流子寿命和外加交流电频率等的依赖关系。

However, care must be exercised when handling the device to avoid strong static fields that may degrade a diode junction, causing increased input leakage currents.

但是，必须注意在处理设备，以避免强烈的静态字段，可能会降低二极管的交界处，造成漏电流增加投入。

Along with the zener diode PN junction temperature change, its regulated voltage value can have the corresponding drifting.

随着稳压管PN结温度的变化，其稳定电压值会发生相应的漂移，从使用上来说其变化值越小稳压性能越好。

Simulation of PN junction diode lays the foundation for the simulations of other semiconductor elements.

本文结合非耦合数值方法，通过求解半导体方程对PN结二极管进行模拟分析，得到了一些重要物理参量分布，这为深入研究电磁辐射对半导体元件的干扰奠定了基础。

With its simplest structure –PN junction, the diode has been studied in this paper as an example for making an explanation on the physical quantity and relevant mathematical expression corresponding with respective parameter of SPICE model in the library of simulation software.

文章以结构最简单的二极管PN结作为研究对象，旨在对与仿真软件的元件库中各元件的SPICE模型参数相对应的物理量及数学表达式加以解释和说明，并就这些参数如何反映二极管的电气特性这一问题作了一定的分析。

The mechanism is studied by Monte Carlo method while 1.8MeV and 4.3MeV alpha particles irradiating the pn junction 6H-SiC diode.

为了研究6H-SiC材料制作的pn结二极管探测器的辐照特性，采用蒙卡程序模拟研究了4.3和1.8MeV能量的α粒子在辐照探测器中的物理过程。

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.

采用工业标准0.6μm CMOS工艺设计了以反向击穿硅p-n结为基础的光发射器件。

They have quite a lot of work to do.

他们有许多工作要做。

Let us give you a more elaborate example of this process.

让我们给你这个过程的更多的详细例子。