查询词典 junction transistor

The ion-sensitive field effect transistor is a chemical sensor that was first presented by P.

离子感测场效电晶体最初是由P。

The main content is as follows: In chapter 1, we describe some important principle molecular devices, and then we introduce the category and self-assembled principle of the monolayer and display some applications in biology, chemistry, nanolithography, organic field effect transistor and other fields.

在第二章中，针对扫描探针显微镜这一本研究中关键的仪器装置，我们简要介绍了它的原理、模式、功能及一些重要的应用。

Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor is supposed to be the ideal potential memory device and has been widely investigated.

铁电场效应晶体管存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。

A carbon nanotube field effect transistor was designed, and fabricated, in this study where the characteristic of the device was examined in aqueous solution with distinct ionic strength.

本研究设计及制备奈米碳管场效电晶体，并藉由水溶液中不同的离子强度来研究和探讨电晶体的特性。

The ion-sensitive field effect transistor was first introduced by P.

Ion-sensitive field-effect-transistor最早是由P。

Ferroelectric films ; ferroelectric field effect transistor ; structure design

铁电薄膜；铁电场效应晶体管；结构设计

A MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) is a device that can turn very large currents on and off under the control of a low signal level voltage.

一个MOSFET（金属氧化物半导体场效应晶体管）是一种装置，可以把非常大的电流和关断下，一个低电压信号电平控制。

In this thesis, the device degradation of low-temperature polycrystalline thin film transistor under gate AC stress in off region with drain bias has been investigated.

在这篇论文中，我们研究了低温复晶矽薄膜电晶体在闸极负偏压脉波且汲极直流偏压的劣化，我们观察到在汲极端会有一个严重的劣化，当闸极操作在负偏压交流讯号且汲极直流偏压下会量测到一个电流(在此我们称为pump current)。

The invention relates to an organic thin-film transistor of three-layer composite film insulated gate which comprises a substrate (1), a metal electrode (2), a organic semiconductor layer (6), a source/leakage electrode; and also comprises: a low dielectric constant polymer layer (3), a high dielectric constant oxide layer (4), a low dielectric constant polymer layer (5), three-layer composite film insulated gate is composed of the (3) layer, the (4)layer and the (5) layer.

本发明涉及三层复合膜绝缘栅的有机薄膜晶体管，包括衬底(1)，金属电极(2)，有机半导体(6)层，源/漏电极(7)；还包括：低介电常数聚合物层(3)，高介电常数氧化物层(4)，低介电常数聚合物层(5)，所述的(3)、(4)和(5)层构成三层复合膜绝缘栅。

The floating body effect can improve the radiation hardness of the back gate transistor.

浮体效应有利于改进器件的背栅抗辐照能力。

Warden: That's a beautiful dog, but don't bring her again.

那是条漂亮的狗，但是不要再把她带来了。

You get up in the morning – no hangover!

你第二天早上起来的时候—不会宿醉！