查询词典 ionization current

The resistors are current limiting resistors used to protect the switches and electrometer from high current.

电阻器是电流限制电阻器，用来保护开关和静电计不受大电流的损害。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

In the electrotechnics basis theory, it's very convenient to solve one branch's voltage and current by the equivalent transformation between the voltage source and current source.

利用电压源与电流源之间的等效变换求解某一支路电压、电流，是电工基础理论中非常方便的方法。

Because the coupling condition of NNGFM arises from the net current continuity imposed at the volume element interfaces, the relatively complex conversion formulation for partial current continuity condition of NGFM is unnecessary when applying G. E. T., and computation time is saved. The coefficient matrix of the coupled equations is tridiagonal, so it can be solved by forward elimination and backward substitution method.

NNGFM的基准校验及在大庆200MW核供热堆(NHR-200)上的应用表明，NNGFM计算精度和速度与第三类边界条件格林函数节块法NGFM〓相当，在相同精度下速度比CITATION能快1000倍；NNGFM给出的本征值、功率分布较NNGFM误差能减少一半以上，为更精确计算工作期、卡棒当量提供了条件。

As a result, the base current of Q12 is decreased and hence the emitter current is also decreased.

结果， Q12 基地潮流被减少并且因此放射器潮流并且被减少。

In other words, transistor emitter current will closely equal diode current at any given time.

或者说，晶体管发射极电流随时都接近二极管电流。

It is discussed in details in the paper that there are four regions depending upon the case occurred in the edge-crowding-effect of emitter current,The distributions and normalized voltage and current density,and their characters are discussed in this paper.

本文以发射极电流集边效应发生的程度，分为四个区域，详细探讨了归一化电位和电流密度分布的特点，指出：在Ⅰ？

The edge-crowding-effect of emitter current in a transistor caused by self-bias of base resistor is one of the factors to limit its capability of loaded current.

由基区电阻的自偏压引起的晶体管发射极电流集边效应，是限制晶体管承载电流能力的因素之一［1-4］。

Current flow between the emitter and base controls the current flow between the emitter and collector.the emitter of the transistor is the most heavily doped so it has the most excess electrons or holes.

由发射极到基极间的电流控制发射极到集电极间的电流，晶体管的发射极是重掺硅型的，所以它有过量的电子或空穴。练习翻译？遇到难题？快来翻吧

This constant emitter current, multiplied by a constant α ratio, gives a constant collector current through Rload, provided that there is enough battery voltage to keep the transistor in its active mode for any change in Rload's resistance.

这个恒定的发射极电流，乘以恒定的系数α，就得到流过负载Rload的恒定的集电极电流。前提是电池电压足够高，不论Rload如何变化，晶体管都能工作在放大区。

We were cousins—his grandfather was King of Scots,and his great-grandfather was Henry VII of England.

我们是堂姐弟——他的祖父曾是苏格兰国王，他的曾祖父是英格兰的亨利二世。

I do want to help you, but I am in a quandary now!

我是想帮你，但是我现在左右为难啊！