查询词典 insulating layer

A multiclad layer optical fiber prefabricated rod includes core rod and outer clad layer; the core rod consists of core layer, inner clad layer and low-hydroxyl high-purity clad layer in sequence, and the outer clad layer includes a high-purity outer clad layer and a subhigh-purity outer clad layer.

本发明涉及光纤制造领域中一种多包层光纤预制棒及制造方法，它包括芯棒和外包层，芯棒由芯层、内包层、低羟基高纯包层依次组成，外包层分为高纯度外包层和次高纯度外包层，它解决了现有的光纤制造技术中，光纤预制棒的外包层所使用的高纯原材料比重过大，从而导致高纯原材料利用率低、制造成本高的问题。

The device, from above to below, includes a floor decoration layer, a phase-changing material layer, an air duct, a radiation protection film, a thermal insulation layer and a floor base layer in turn; keels are arranged between the floor decoration layer and the floor base layer, at least a heat supply waterpipe or a electrical heating film are buried in the phase-changing material layer between adjacent keels; a wind gap is arranged at both ends of the air duct to communicate with indoor air.

该装置自上而下依次包括地板装饰层、相变材料层、空气通道、防辐射膜、保温层和地板基层；在地板装饰层和地板基层之间设有龙骨，在相邻龙骨之间的相变材料层中埋有至少一根供热水管或一个电加热膜；在空气通道的两端设有风口与室内空气相通。

According to core observation and description, many deformation structures with seismite characteristics are recognized within sandstone and shale sedimentary strata of Paleogene continental faulted basin in Yangxin Subsag, such as micro-faults, earthquake fissures, liquefaction sandstone veins, water-escape structure, vibrational liquefaction deformation structure, seismic pillow structure and associated structure, etc. The vertical sequence of seismites in Yangxin Subsag, in ascending order, is underlying unshocked layer, micro-faults layer, autoclastic shattered breccia layer, vibrational liquefaction deformation structure layer, seismic pillow structure and associated structure layer, liquefied homogeneous layer and overlying unshocked layer, which corresponds to different earthquake intensity respectively.

通过岩心观察和描述，在阳信洼陷古近系陆源碎屑断陷湖盆砂泥质沉积地层中识别出大量具有震积岩特征的变形构造，如微断层和震裂缝、水下岩脉和泄水构造、振动液化卷曲变形构造、震积枕状层及伴生构造等，同时建立了阳信洼陷震积岩垂向序列，自下而上分别是下伏未震层段、微断层层段、震碎角砾岩段、振动液化卷曲变形层段、震积砂枕及伴生构造层段、液化均一层段和上覆未震层段。

The outer neuroblastic layer before it divided to inner and outer nuclear layer and outer complexiform layer and gonglion cell layer showed a temporal PCNA positive which was related to proliferation. The three cell layers had another PCNA positive when finished time changed from outer to inner after their morphologic development basically completed( outer nuclear layer:11～15 days,inner nuclear layer: 8～16 days, gonglion cell layer:16～21 days).

PCNA显示在外成神经细胞层分化为内、外核层和外丛状层之前，和节细胞各有一次和增殖相关的阳性表达。3个细胞层在形态学的分化基本完成后，又出现了一次结束时间是由外向内变化的阳性过程（外核层：第11天至15天：内核层：第8天至16天，神经节细胞层： 16天到21天，这一次阳性表达过程可见到细胞形态向成年形态的转化。

The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si.sup.+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer.

专利简介本发明系关於一种紫外光检测器及制程方法，其主要系在一基板上形成一缓冲层，利用磊晶法在缓冲层上形成一P型氮化镓系层，并接著以离子布植技术将Si+离子适当地布植於该P型氮化镓系层中，形成一N型氮化镓系层及包覆在此N型氮化镓系层中且布植浓度更高的另一N型氮化镓系层，最后在该P型氮化镓系层及第二N型氮化镓系层上分别镀上一环状金属层及另一金属层，以作为欧姆接触层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

The results showed that the structure of retina in Lasiopodomys mandarinus exhibited typical structure of vertebrates, including retinal pigment epithelium, rod cone layer, outer nuclear layer, outer plexiform layer, inner nuclear layer, inner plexiform layer, ganglion cell layer, and nerve fiber layer from outside to inside.

结果表明，棕色田鼠的视网膜结构呈典型的脊椎动物视网膜结构类型，由外向内分别为色素上皮、视锥视杆层、外核层、外网层、内核层、内网层、节细胞层、神经纤维层。

A gate insulating film is formed on the surface of a semiconductor substrate in an opening of a field insulating film, and thereafter a gate electrode and a capacitor lower electrode made of doped polysilicon or the like are formed on the insulating film.

本发明公开了一种半导体器件的制造方法。在场绝缘膜的开口中在半导体衬底的表面上形成栅极绝缘膜，且其后在绝缘膜上形成由掺杂的多晶硅等制成的栅电极和电容器下电极。

The purpose of the invention is a rotary motor coil portion insulating construction for releasing stress between a conductor and a insulating resin, alleviating lacker skin damage state and keeping high bond strength and high insulating property at long time.

本发明的目的是取得缓解导体与绝缘树脂之间发生的应力、减轻瓷漆皮损坏且长期维持高粘合强度和高绝缘性的旋转电机线圈部的绝缘结构。

The large amount of microporosity in calcium hexaluminate insulating refractory keeps its thermal conductivity at low levels from room temperature to 1 500 ℃,which makes calcium hexaluminate insulating refractory as a unique novel insulating material.

六铝酸钙(CA6)隔热耐火材料有着大量的微米级气孔，故其热导率从室温至1500℃均保持在较低水平，这使其成为一种独特的新型隔热耐火材料。

Molecular Distillation is a kind of high vacuum distillation method, which is suitable for the separation of high boiling, heat sensitivity and viscidity products.

分子蒸馏技术是一种在高真空条件下进行的连续蒸馏过程，适合于分离高沸点、热敏性及具有生物活性的混合物。

They are to the Noughties what yuppies were to the Eighties .

那在六十年代是时髦的，但在八十年代肯定是过时了