查询词典 input bias current

Current input technology provides us with the ubiquitous mouse, the data tablet and the transparent, touch-sensitive panel mounted on the screen. Even fancier input devices that supply, in addition to screen location, 3D and higher-dimensional input values, are becoming common

现在的输入设备主要有鼠标、数字化仪以及触摸屏等，使用它们不仅可以输入屏幕位置，还可以获得三维和更高维的输入值，比如轨迹球、空间球和数据手套等。

Therefore, the exact relation between the unbalanced input voltage and the noncharacteristic harmonics of the output voltage in the 12-pulse rectifier system is obtained. In addition, the relation between the input current and the imbalance of the input voltage is obtained, which could help to choose the filter elements and exactly analyze the characteristics of the no controlled rectifier circuit.

利用精确的开关函数，推导了多脉波整流系统输入不平衡电压与输出电压非特征谐波的精确关系，进而得到电阻、电感负载时系统输入电流与输入电压不平衡度的关系，为精确地选择滤波元件做了有意义的探索。

By the best approximation and the geometric interpretation of signal vectors in adaptive filters, the input noise variance is obtained with the information obtained from the traditional LMS algorithm. Then, based on γ-LMS algorithm, it can iteratively eliminate the input noise effects to obtain the bias in the Wiener solution and the true system coefficients.

根据自适应滤波器的最佳逼近原理和各信号矢量的几何关系，利用传统LMS算法获得的信息来估计输入噪声的功率，再通过γ-LMS算法在迭代过程中逐步修正维纳解，去除输入噪声的影响从而得到系统参数的真实估计。

The input bias currents CAN now flow freely to ground and do not build up a large input offset as before.

此时，输入偏置电流可以顺畅地流入地线而不象以前一样会产生大的输入失调电压。

In the case of the input signal being spectrally colored, the conventional adaptive feedback cancellation algorithm suffers from bias caused by the correlation between the output signal and the input signal.

当系统输入信号是有色信号时，传统的自适应反馈抵消算法会由于系统的输出和输入信号存在相关性而造成辨识反馈路径存在偏差，从而导致反馈抵消性能的降低。

It was shown that for small input signals, operation is limit- ed in so small a portion of the characteristic that much smaller than usual grid bias may be used to obtain higher trangconductance, and consequently higher gain; whereas for large input signals,non-linearity of the characteristics limits the maximum output obtainable.

证明要得到没有畸变的调幅，必须使阳极电压、屏栅极电压、栅偏压和栅极激励用上压同时加以调制。所要求的调制方式都是很近于同比例的。

Because the primary source of noise in an amplifying IC is its input stage, you can assume that the standard deviation of the random component of output current of the paralleled-N voltage-to-current converters is σNI=σI×, where σI is the standard deviation of the random component of output current of a voltage-to-current converter.

由于放大器噪声的主要来源为输入端，假设N个并联电压电流转换器输出电流的随机器件标准差为σNI=σI×，σI为电压电流转换器输出电流的随机器件标准差。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

SN75LBC184 series is high withstand voltage, low noise stabilized power supply with reduced reactive current at low input voltage and small input / output differential voltage 0.2V at 40mA output current.

1第1页，本页显示记录1-19，共19条记录分1页显示SN75LBC184系列高耐压，低噪音稳定在四十○毫安输出电源电流，降低无功电流，低输入电压和小的输入/输出电压0.2V的差分。

With voltage measurements, the input current is ideally zero; thus, any input current represents an error.

对电压测量来说，理想的输入电流应为零，所以，一切输入电流都代表误差。

Cable dampener cannot be rolled up but must be hung over the cable.

缆帆不能被卷起，必须保证处于展开状态

"This skylark is a present from my master," he says.

"这只云雀是我主人献上的礼物。"他说。