查询词典 impurity

The donor impurity and grain boundary combustion-supporting agent containing acceptor impurity were added successively in the ceramic powder during ceramic powder preparation, both of them can also promote grain growing and semiconductive, and the combustion-supporting agent can be good to form insulation layer in oxidizing process.

采用一次性烧成技术研制了晶界层半导体陶瓷电容器，在瓷料配制过程中先后加入施主杂质和含有受主杂质的晶界助烧剂，两者在还原烧成时促使晶粒生长并半导化，助烧剂在氧化时有利于晶界绝缘层形成。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

After analyzing the difference of orbit electron distribution, valence electron number, atomic radius between impurity M and Cu, we clarify that the unusual low temperature property of heavy electron system CeCu〓M〓 not only come from the"size effect"of impurity, the magnetism, valence electron number of impurity also play an important role.

各杂质掺杂对CeCu〓低温性质的影响是由杂质自身性质所决定的，通过分析不同杂质的轨道电子分布、价电子数目、原子半径与Cu原子的区别，结合实验结果，证明重电子系统CeCu〓M〓的低温性质不但与杂质的尺寸效应有关，而且杂质的磁性、价电子数也起重要的作用。

This thesis demonstrates the pre-polymers in a polymer-dispersed cholesteric liquid crystals can be polymerized into a polymer film, which can eliminate the aligning capability of the homogeneous alignment layer. Thereafter, the textures of the cholesteric liquid crystals in UV-cured region can be changed from reflective planar texture to the scattered focal conic one. Additionally, the clearing temperature of the liquid crystals can be reduced by doping with chiral dopant or monomers. The cause is the increase of the impurity concentration in LCs. In other words, if the monomers are polymerized, the clearing temperature of LCs in that region should increase due to the decrease of the impurity concentration. Therefore, impurities associated with doping with monomeric and chiral dopants cause the clearing temperature of LCs in cured region to differ from that in uncured region.

本文中，我们提出在高分子聚合物薄膜之胆固醇液晶(polymer-dispersed cholesteric liquid crystals，简称PDCLCs)中，利用紫外光使PDCLC中的单体聚合成薄膜，此即为光引致聚合反应，而该薄膜将原本在表面所作的配向膜覆盖且破坏其配向能力，使胆固醇液晶由原本反射的planar结构转换成散射的focal conic结构；另外，有关液晶材料的相变温度会由於掺杂手性分子或单体而降低，此因液晶材料内『杂质』浓度增加，而造成的液晶材料之不纯度增加，最终导致相变温度降低，若搭配上述光引致聚合反应，则由於光照区之单体聚合，使该区域单体占总材料之比例下降，即不纯度降低，进而使液晶材料之相变温度上升，该区域之相变温度与未照光区有所不同。

We systematically discussed impurity species, impurity resources, and impurity recycling by way, gave several impurities influx. and analyzed the results of impurity controlling experiment (Titanium guttering and boronization) on HT-6M.

通过近紫外-可见全谱和对杂质谱线的时间行为的测量，系统分析HT-6M杂质种类和可能的来源，给出了几种常见杂质朝内通量，讨论杂质产生的机制和循环途径，分析了杂质控制实验结果。

The study of acceptor Ga open-tube diffusion in SiO2/Si has been carried for several decades, whose pursuing was only to get the diffused surface of high uniformity and reproducibility and impurity distribution in Si which can improvethe electrical performance of the devices, but the various manifestation of Ga segregation effect at the SiO2-Si internal interface and the dynamic intendancy of the impurity concentration variability have not been reported.

关于受主杂质Ga在SiO_2／Si系统进行开管掺杂的研究已有几十年的历史，研究的内容与追求的目标主要集中在如何获得高均匀性、重复性的扩散表面和提高器件电学性能的硅体内杂质分布形式，而对Ga在SiO_2-Si内界面上分凝效应的各种表现，以及由此造成的近硅表面杂质浓度动态变化趋势尚未见报导。

Based on the 2-D distribution of channel impurity, the distribution of 2-D electric field and 2-D interaction potential, which is caused by the interaction between the ionized impurity in the depletion layer and radiation induced positive spatial charge, is analyzed by using image charge method. Resolving Poisson equation, the mobility expression of N-type and P-type non-uniform channel MOS and the mathematics expression of the threshold voltage model of DMOS are obtained.

基于沟道杂质的非均匀分布，借助镜像法导出非均匀沟道辐照正空间电荷和沟道中电离杂质的二维场及其作用，给出非均匀沟道DMOS器件辐照正空间电荷与沟道杂质的二维互作用势。

For single wall carbon nanotubes, we study the nonmagnetic and magnetic impurity effects on zigzag nanotubes by Green's function perturbation method and found that the impurity effects are different for semiconducting and metallic nanotubes. Arbitrary potential can induce a bound state in semiconducting nanotubes, and resonance state in metallic tubes.

在我们的工作以前，共振态对系统磁性的贡献往往被忽略，实验上观测到的掺非磁性杂质的高温超导的磁化率呈居里—外斯形式完全归结为杂质诱导出的局域磁矩，尽管可以解释磁化率，但与一些实验产生矛盾。

ABSTRACT : Objective To establish a HPLC method for determination of impurity dicyanodiamide and impurity(1) and impurity(2) in Metformin hydrochloride and Glibenclamide Tablets.

目的建立 HPLC 方法测定复方盐酸二甲双胍格列苯脲片中已知有关物质双氰胺杂质(1)和杂质(2)的含量。

Get rid of big impurity in water, soft drink impurity fibred impurity, effective protection ultra-filtration.

去除水中大的杂质。软性杂质，纤维性杂质，有效保护超滤膜。

If Pentium 4 used to be the master of all games built on Quake3 engine, now the situation has changed completely.

如果奔腾4使用的是掌握所有游戏建立在求苛刻的发动机，现在的情况已完全改变。

No, this is not what we mean by framing, although the principle is the same.

不，这不是我们所讲的框架的含义，尽管法则是一样的。