查询词典 field type

We need patterns associated to each field type.

我们需要相关的每个字段类型的模式。

If our rule is something we will reuse again and again, we can create a custom field type.

如果我们的规则会被一次又一次的使用，我们可以创建一个自定义的字段类型。

Keep an eye out for that, and change the field type accordingly if needed.

因此，请特别注意这一点，并且在必要的时候相应的修改这些字段类型。

With the metadata we now have gathered for our example, and the field type patterns

随着数据收集，我们现在为我们的例子中，字段类型和模式

In Base the field type must be specified.

在Base中，必须指定字段类型。

In the upper text field, type a name.

在靠上部分的文本字段中，键入一个名称。

In the Placeholder field type in Name.

在"Placeholder"内输入名字。

Based on the aberration theory of AWG, a new-type flat-field AWG is designed. The focal signals of all wavelengths of operation are focusing along a straight line perpendicular to the propagation direction. Three stigmatic points restrain three dominant geometry parameters. Furthermore, a new-type flat-field wavelength router with both flat input field and flat focal field is also designed.

基于阵列波导光栅的像差理论，利用三个无像差点约束三个主要结构参量，设计了新型平场聚焦阵列波导光栅，使得所有工作波长的输出信号都聚焦在与光束传输方向垂直的直线上，并进一步将其拓展为同时具有平输入场和平聚焦场的新型平场波长路由器。

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly.

本发明公开一种高压P型金属氧化物半导体管，包括P型衬底，在P型衬底上设有深N型阱，在深N型阱上设有N型阱和P型漂移区，在N型阱上设有N型接触孔、P型源及场氧化层，在P型漂移区上设有P型漏及场氧化层，其特征在于位于N型阱上方的栅氧化层部分的厚度小于位于P型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

In this paper, the requirement analysis, design and implementation of the system are introduced in detail.

此论文详细介绍了系统的需求分析，系统设计和具体实现。

In the context of economic globalization is increasingly deepening, China's economy can not be spared.

在经济全球化日益加深的背景下，中国经济不可能做到独善其身。