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etching press相关的网络例句

查询词典 etching press

与 etching press 相关的网络例句 [注:此内容来源于网络,仅供参考]

This Al -free 980nm pump laser have many merits, such as improved catastrophic optical damage level; no degradation due to oxidation of aluminium during fabrication process and laser operation, which is desirable characteristic for multi-step growth; lower electrical and thermal resistance with GalnP cladding; better carrier confinement with GalnAsP confinement layers; Selective chemical etching between GaAs and GalnP maks precisely control for fabrication of stripe geometry lasers.· Calculated the physical parameters of ternary and quaternary III - V compoundsby interpolation formulas based on curve fits or on a linear regression, such aslattice parameter, band gap, and refractive index.· Using luttinger-kohn Hamiltonian-based propagation-matrix method presentedby S.L.

这种无Al980nm半导体激光器可以提高激光器出现腔面损伤所需的能量,消除在生长过程和应用过程中由于Al的氧化而使激光器的使用寿命缩短的问题,便于激光器的多次生长;以GaInP为盖层可以降低电阻和热阻;可以精确的控制GaAs和GaInP之间的化学刻蚀,便于激光器几何形状的控制。

Deep reactive ion etching is one of the most convenient and popular processes in MEMS fabrications.

反应离子深刻蚀是目前MEMS加工中便捷有效的主流加工工艺之一。

Effect of acid etching on electrical performances of microchannel plat[J].

酸蚀对微通道板电性能的影响[J]。

One of them is based on etched porous alumina and carbon-gold-carbon compound film. The alumnia film surface is composed of rows of valleys with diameter of about 300 nm, and is realized by etching porous alumina in diluted phosphorous acid.

第一种阴极采用基于多孔氧化铝和无定形碳的双层传导薄膜,其中氧化铝薄膜的表面具有横向尺寸为300 nm的特殊凹陷结构,是对常规多孔氧化铝薄膜进行腐蚀形成的。

A method of etching Micro-Grating Structures by ablating nickel plate was studied,which makes use of the interference laser of 351 nm diode-pumped solid-state laser pulses.

利用波长为351 nm的半导体抽运全固态脉冲激光器,采用双光束干涉方法,对金属镍板表面直接刻蚀形成微光栅结构的方法进行了实验研究。

The factory is a professional engaged in screen printing, etching nameplate factories.

本厂是一家专业从事丝印、蚀刻铭牌制造厂。

L Containing fingerprint neutralising agent, which prevent corrosion from finger etching.

含指纹中和剂,能防止因指纹印汗液所做成的腐蚀。

The exposed areas of metal or alloy which are not protected by the polymerised etch-resist layer are then selectively removed by chemical etching from those areas protected by the etch-resist layer.

暴露的金属或合金的地区不属于蚀刻的聚合性保护抵制层,然后有选择地去除蚀刻由保护层这些地区的抵抗化学腐蚀。

A process for making an electronic device which comprises applying a nonaqueous plate-resistant ink by ink jet printing to selected areas of a dielectric substrate, optionally laminated with an electrically conductive metal, exposing the plate resistant ink to actinic and/or particle beam radiation to effect polymerisation, adding one or more metal layers by electrolytic or electroless deposition, the upper layer of which is an etchresistant metal, removing the polymerised plate-resistant ink with alkali and finally removing the electrically conductive metal which are optionally directly laminated to the dielectric substrate and not protected by an upper layer of etch-resistant metal by chemical etching wherein the plate-resistant ink is substantially solvent-free and comprises: A 30 to 90 parts acrylate functional monomers free from acid groups comprising mono- or higher functionality wherein 5 to 95% by weight are mono-functional monomers; B 1 to 30 parts acrylate functional monomer containing one or more acid groups; C 0 to 20 parts polymer or prepolymer; D 0 to 20 parts radical initiator; E 0 to 5 parts colorant; F 0 to 5 parts surfactant; and where the ink has a viscosity of not greater than 30 cPs at 40 DEG C and all parts are by weight.

一种制备电子装置的方法,所述方法包括以下步骤:通过喷墨印刷在任选层压了一种或多种导电金属的介电底材的选定区域涂覆非水的阻沉积油墨,将所述阻沉积油墨暴露在光化辐射和/或微粒束辐射中以完成聚合,通过电解沉积或无电沉积增加一层或多层金属层,其中最上层的金属层为一种或多种阻蚀刻金属,用碱除去聚合的阻沉积油墨,最后通过化学蚀刻将任选直接层压在所述介电底材上并且不被一种或多种阻蚀刻金属的上层保护的导电金属除去,其中所述阻沉积油墨基本不含溶剂,并且包含以下组分:A30-90份不含酸基团的丙烯酸酯功能性单体,所述单体包括单官能或多官能单体,其中5-95%重量为单官能单体;B1-30份包含一个或多个酸基团的丙烯酸酯功能性单体;C0-20份聚合物或预聚物;D0-20份自由基引发剂;E0-5份着色剂;和F0-5份表面活性剂;其中所述油墨的粘度在40℃下不高于30cPs,并且所有的份数以重量计。

The effects of different pretreatments including acid etching and copper interlayer and deposition conditions on the quality of diamond films were studied.

研究了铜过渡层和酸蚀脱钴两种基体前处理工艺以及在施加铜过渡层的情况下,不同的沉积气压和基片温度对金刚石薄膜的质量的影响。

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