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emitter current相关的网络例句

查询词典 emitter current

与 emitter current 相关的网络例句 [注:此内容来源于网络,仅供参考]

This issue is addressed by an inrush current limiter device for limiting inrushing current to a connectable load comprising: at least one switchable IGBT-based limiter unit for selectively limiting the inrushing current, having at least one current limiting conductor element for a limited leading of current and at least an IGBT-based switch whereby the IGBT-based switch is used as well as a controlled current limiter and as a by-pass element, and at least one control device for controlling the IGBT-based switch, whereby the control device comprises at least one IGBT-based switch supply and means for realizing smooth flanks of an output signal at the selected conductor element.

该问题通过用于限制针对可连接负载的浪涌电流的浪涌电流限制器设备解决,该浪涌电流限制器设备包括:至少一个可开关的基于IGBT的限制器单元,用于选择性地限制浪涌电流,其具有至少一个限流导体元件,用于有限引导电流,和至少一个基于IGBT的开关,其中基于IGBT的开关用作受控电流限制器和旁通元件,和至少一个控制设备,用于控制基于IGBT的开关,其中控制设备包括至少一个基于IGBT的开关电源和用于实现选定导体元件处的输出信号的平滑侧面的装置。

The present invention relates to an inrush current limiter device for limiting inrushing current to a connectable load comprising: at least one switchable IGBT (Insulated Gate Bipolar Transistor)-based limiter unit for selectively limiting the inrushing current, having at least one current limiting conductor element for limited leading of current, and at least an IGBT-based switch, whereby the IGBT(Insulated Gate Bipolar Transistor)-based switch (Q2) is used as well as a controlled current limiter and as a by-pass element, and at least one control device for controlling the IGBT-based switch, whereby the control device comprises at least one IGBT-based switch supply and means for realizing a smooth flank of an output signal at the selected conductor element.

本发明涉及一种用于限制针对可连接负载的浪涌电流的浪涌电流限制器设备,包括:至少一个可开关的基于IGBT的限制器单元,用于选择性地限制浪涌电流,其具有至少一个限流导体元件,该限流导体元件用于有限引导电流,和至少一个基于IGBT的开关,其中基于IGBT的开关(Q2)用作受控电流限制器和旁通元件,和至少一个控制设备,用于控制基于IGBT的开关,其中控制设备包括至少一个基于IGBT的开关电源和用于实现选定导体元件处的输出信号的平滑侧面的装置。

We also know that the ratio between collector current and emitter current is called α.

我们还知道集电极电流与发射极电流之间的系数是α。

Therefore, if we have a way of holding emitter current constant through a transistor, the transistor will work to regulate collector current at a constant value.

于是,只要我们能让晶体管的发射极电流保持恒定,它就能保持发射极电流为恒定值。

As a result, the base current of Q12 is decreased and hence the emitter current is also decreased.

结果, Q12 基地潮流被减少并且因此放射器潮流并且被减少。

In other words, transistor emitter current will closely equal diode current at any given time.

或者说,晶体管发射极电流随时都接近二极管电流。

It is discussed in details in the paper that there are four regions depending upon the case occurred in the edge-crowding-effect of emitter current,The distributions and normalized voltage and current density,and their characters are discussed in this paper.

本文以发射极电流集边效应发生的程度,分为四个区域,详细探讨了归一化电位和电流密度分布的特点,指出:在Ⅰ?

The edge-crowding-effect of emitter current in a transistor caused by self-bias of base resistor is one of the factors to limit its capability of loaded current.

由基区电阻的自偏压引起的晶体管发射极电流集边效应,是限制晶体管承载电流能力的因素之一[1-4]。

This constant emitter current, multiplied by a constant α ratio, gives a constant collector current through Rload, provided that there is enough battery voltage to keep the transistor in its active mode for any change in Rload's resistance.

这个恒定的发射极电流,乘以恒定的系数α,就得到流过负载Rload的恒定的集电极电流。前提是电池电压足够高,不论Rload如何变化,晶体管都能工作在放大区。

The most common ratio using current asset and current-liability data is the current ratio, which is current assets divided by current liabilities.

利用流动资产和流动负债数据计算的最常见的比率是流动比率,即流动资产除以流动负债。

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