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dopant相关的网络例句

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与 dopant 相关的网络例句 [注:此内容来源于网络,仅供参考]

After the assuredness of the dopant and the depth of the layers, associating the chief technology directive, the structural parameters of the device are obtained and theoretically checked.

确定了各层结构的掺杂浓度和厚度后,结合主要技术指标得出了器件的结构参数,并对主要参数进行了理论核算。

Dopant Sb enhances the crystallization rate of the TiO2 from amorphous to brookite and anatase phase.

掺杂Sb提高了TiO2由无定型向板钛矿和锐钛矿转变的速率。

By way of yet another example, the "condition" is the presence of a particular dopant in a semiconductor that provides a low-mass electron as a charge carrier.

方式的又一个例子,"条件"是在场的某一掺杂在半导体提供了一个低质量的电子作为承运人负责。

Microstructure analysis showed that graphitization degree of Ti-doped graphite increased and the correlation between graphitization degree and dopant quantity is complex.

微观结构分析表明,材料的石墨化程度大大提高,同时,材料的石墨化程度与其导热性能间呈现出较为复杂的关系。

It indicates that the PANI particles constituted films are ball like or ellipsoid like; the film takes on tertiary structure; HClO4 servers as both an acid medium and a dopant; the crystallizability of the film seems poor; the relationship between film thickness and acid concentration is not in linearity; the conductivity of the film is on a level with semiconductor, whose value depend more on film appearance than acidity of acid medium; the film starts dedoping at 67.3℃ and end at 277.2℃.

结果表明,构成薄膜的聚苯胺粒子呈球型或椭球型;薄膜具有三级结构特征;高氯酸不仅作为介质酸,同时作为掺杂剂;薄膜的结晶性能不佳;薄膜厚度与介质酸的浓度并非线性关系;薄膜的电导率处于半导体水平;电导率大小与无机介质酸的酸性强弱有一定关系,与表面形貌关系更为紧密;高氯酸掺杂聚苯胺薄膜在67.3℃时开始脱掺杂,在277.2℃脱除完全。

The resulting materials were characterized by x-ray diffraction, Fourier transform infrared spectroscopy, Nuclear magnetic resonance and Photoluminescence. Those spectra reveal that by adding SiO2 to YAG:Ce precursor, the lattice constant decreases while vacancies are generate due to the co-dopant ions (Si4+) replaces in the place of Al3+ sites of YAG:Ce system. YAG:Ce phosphors with Y3+ dodecahedral site replaced by Ce3+ and diffused effectively as an activator, as a result the photoluminescence intensity increased about ~20-30%.

研究成果显示,掺杂SiO2之YAG:Ce萤光粉经过高温热处理后,由X光绕射、红外线吸收光谱仪以及核磁共振可以得知,当SiO2添加量增加时,YAG:Ce晶格常数会因为Si4+取代Al3+的四面体晶格位置而变小,同时产生将YAG:Ce之铝离子空位缺陷,使活化中心更有效地在YAG:Ce主体中扩散取代Y3+的十二面体晶格位置,提高其发光性质约20~35%。

Our work demonstrates that carbon is a novel dopant in the class of doped ZnO dilute magnetic semiconductor materials.

我们的工作证明了碳是一种新的属于氧化锌掺杂务半导体材料。

There is shortage of expanding absorption spectra of wide bandgap semiconductor to use dyestuff or dopant.

二氧化钛半导体的光催化吸收波长范围在紫外区,利用太阳光的比例低。

It is observed there are two phase transitions at about 400℃ and 850℃ in each sample before melting, respectively. By careful measurement it shows the amounts of weight loss and endotherm, along with T, decrease with the dopant increasing when phase transitions occurred.

热分析发现熔化前在400℃和850℃分别存在2个相变,仔细测量得出相变发生时随掺杂量增加,失重量和吸热量减少,超导转变温度T降低。

This thesis demonstrates the pre-polymers in a polymer-dispersed cholesteric liquid crystals can be polymerized into a polymer film, which can eliminate the aligning capability of the homogeneous alignment layer. Thereafter, the textures of the cholesteric liquid crystals in UV-cured region can be changed from reflective planar texture to the scattered focal conic one. Additionally, the clearing temperature of the liquid crystals can be reduced by doping with chiral dopant or monomers. The cause is the increase of the impurity concentration in LCs. In other words, if the monomers are polymerized, the clearing temperature of LCs in that region should increase due to the decrease of the impurity concentration. Therefore, impurities associated with doping with monomeric and chiral dopants cause the clearing temperature of LCs in cured region to differ from that in uncured region.

本文中,我们提出在高分子聚合物薄膜之胆固醇液晶(polymer-dispersed cholesteric liquid crystals,简称PDCLCs)中,利用紫外光使PDCLC中的单体聚合成薄膜,此即为光引致聚合反应,而该薄膜将原本在表面所作的配向膜覆盖且破坏其配向能力,使胆固醇液晶由原本反射的planar结构转换成散射的focal conic结构;另外,有关液晶材料的相变温度会由於掺杂手性分子或单体而降低,此因液晶材料内『杂质』浓度增加,而造成的液晶材料之不纯度增加,最终导致相变温度降低,若搭配上述光引致聚合反应,则由於光照区之单体聚合,使该区域单体占总材料之比例下降,即不纯度降低,进而使液晶材料之相变温度上升,该区域之相变温度与未照光区有所不同。

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