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Trichogramma showed high control efficacy on cotton bollworm eggs after three times of release both in the second and in the third generation bollworm periods. The parasitism on the second and third generation bollworm eggs were 66.0%-70.7% and 76.0%-81.2%, respectively, which were significantly higher than that in the control (second generation: 7.0%-12.3%, third generation: 5.2%-7.4%). And the injury rate of cotton buds and bolls in the second and third generation bollworm were 2.2% and 3.1%, respectively, which were significantly lower than that in the control (second generation:8.5%, third generation: 20.9%). In the second generation bollworm period, number of bollworm eggs or larvae in the Trichogramma released cotton field did not differ to that in the chemically controlled field. But in the third generation, there were significantly less bollworm eggs and larvae in the Trichogramma released cotton field. There were more predators in the Trichogramma released cotton field. These results indicated that cotton boll worm in the transgenic insect-resistant cotton field can he effectively controlled by mass-releasing of T.

结果发现:棉铃虫卵在棉株不同部位的分布差异较大,2代棉铃虫卵主要分布在叶正面、叶背面和茎尖,3代棉铃虫卵主要分布于蕾铃;在放蜂田,赤眼蜂对棉株不同部位棉铃虫卵的寄生率差异较大,2,3代棉铃虫时期对叶正面、叫背面、茎尖、蕾铃的棉铃虫卵寄生率均较高,对叶柄和茎杆处卵的寄生率较低;并以3代棉铃虫时期的寄生率较高;在2,3代棉铃虫时期分别连续释放3次赤眼蜂,对棉铃虫具有很强控制作用,2,3代棉铃虫卵的被寄生率分别为66.0%~70.7%和76.0%~81.2%,均显著高于化防田的自然寄生率(2代:7.0%~12.3%,3代:5.2%~7.4%);蕾铃被害率分别为2.2%和3.1%,均显著低于化防田(2代:8.5%,3代:20.9%;2代棉铃虫时期,放蜂田和化防田的棉铃虫卵量和幼虫数量差异均不显著,但3代棉铃虫以后,放蜂田棉铃虫卵量和幼虫数量均显著低于化防田,且放蜂田的捕食性天敌数量显著高于化防田。

Being controlled by the rheology of the lower crust, erosion may level off the topography, and can break the balance of kinetics and thermodynamics inside of the crust therefore rebuild the structure and component of the curst. the uplift process of the mountains is then enhanced; we believe that the rate of the exhumation is controlled by both the uplift of orogen and the outer spheres of the earth.

在下地壳物质层流变作用机制的调节下,地表剥蚀作用并不仅仅是传统意义上地表夷平的因素,它还能打破地壳动力学和热力学平衡,引起地壳内物质和结构的重置,进而促成山脉的加剧隆升;地表剥蚀作用的强度既受控于造山带的抬升,也受制于地球外圈层。

The foreland basin phase was controlled mainly by the thrust of Qinlin-Dabie orogenic area during later Jurassic and middle Triassic;the rift basin phase is controlled by fault and deasil circumvolving with the change of stressing during Cretaceous and Paleocene,with strong magma activity;and in the depression basin phase the bas...

盆地地壳结构和小震分布及震源机制解显示地震集中在沉降最大的潜江—沔阳凹陷带附近,震源深度优势分布在15 km左右,即盆地基底附近。

Controlled rolling and controlled cooling is an advanced technology in modern high speed wire producing. The remarkable characteristic of this technology is reducing decarbonization, controlling the dimension of particle, improving the organization and capability of steel, and controlling the capacity of ferric oxide.

控制轧制和控制冷却是现代高速线材生产的前沿技术,其显著特征是减少脱碳,控制晶粒尺寸,改善钢的组织、性能及控制氧化铁皮的生成量。

Abstinence 6 hours of above. 1.2 spile method introduces recorder of the Digitrapper MDIII of Swedish CTD company, MDII PH, use vessel of small electrode of single crystal antimony, use standard amortize liquid first corrective PH value, the patient takes upright seat, cleanness is wet and rhinal, with lube before wet conduit paragraph, nasal cavity of a side of light firm will tracheal edge is inserted to pitch of head of patient of the enjoin when 15cm is controlled, make under the forehead stands by pectoral wall, in order to increase the radian of pharynx ministry passageway, make conduit is entered not easily by accident tracheal, and its do enjoin deglutition movement, slow guide conduit stomach, right now PH shows 1~2 is controlled, again will tracheal slow take out, when PH the value comes by .0 jump 5 when, judgement is ministry of gastric esophagus join , drag electrode 5cm to secure again with this.

禁食6小时以上。1.2插管方法采用瑞典CTD公司的Digitrapper MDIII、MDII型pH记录仪,应用单晶锑微电极导管,先用标准缓冲液校正pH值,患者取端坐位,清洁湿润鼻腔,用润滑油湿润导管前段,轻稳将导管沿一侧鼻腔插至15cm左右时嘱患者头部前倾,使之下额靠近胸壁,以加大咽部通道的弧度,使导管不易误入气管,并嘱其做吞咽动作,并缓慢将导管导入胃,此时pH显示1~2左右,再将导管缓慢抽出,当pH值由。0突升至5.0时,判定为胃食管连接部,以此将电极再拽5cm固定。

The research shows that in the Yinggehai basin, the formation of CO_(2) reservoir which is crust-sourced and crust-mental-mixed-sourced, mainly controlled by local action of hot fluid in the mud diapir area which is multi terms and multi zones and by physical-chemical mechanism of very thick marine calcareous sandstone and mudstone of Pliocene-Miocene. The volcano- and mantle-sourced CO_(2) in the Qiongdongnan basin and Pearl River Mouth basin is mainly controlled by volcanos activities and by the exist of large faults which reached to base to connect the gas from the mantle. According to different mechanism ang formation of reservoir os the the crustal rock-chemical genesis and volcano-and mantle-sourced CO_(2), we can follow the source of it, analysis and predict the migration and accumulation and distribution model of gas and espacially CO_(2), so as to help to make the plan of petroleum exploration and reduce the risk of exploration.

认为:莺歌海盆地壳源型及壳幔混合型CO2的形成及富集成藏,主要受控于泥底辟热流体晚期分层、分块和多期的局部上侵活动,和巨厚的上新统—中新统海相含钙砂泥岩的物理化学综合作用,且CO2运聚分布规律亦具多期和分层、分区的特点;琼东南盆地东部及珠江口盆地火山幔源成因型CO2则主要受控于幔源型火山活动和沟通深部气源的基底深大断裂的导气配置作用,CO2运聚富集规律与幔源型火山活动及深大断裂的发育展布密切相关,CO2主要来自地壳深部幔源火山活动所伴生的大量CO2;因此,根据壳源岩石化学成因型CO2与火山幔源成因型CO2不同成因机理及成藏条件,可以追踪CO2气源,可分析和预测天然气尤其是CO2的运聚分布规律,可为天然气勘探部署及决策提供依据,可减少和降低勘探风险。

It is shown that in the basins in the Eastern China, onshore and offshore, the formation of CO2 reservoir is crust-sourced and crust-mantal-mixed-sourced, mainly controlled by local activity of hot fluid into the mud diapir area in multi-phase and multi-zones in physical-chemical mechanism of very thick marine calcareous sandstone and mudstone of Pliocene-Miocene. The volcano- and mantle-sourced CO2 in the Qiongdongnan Basin and Pearl River Mouth Basin is mainly controlled by magmatism and major faults which cut through the basements and link to the mantle gas.

研究表明,中国东部陆相断陷盆地与东海陆架盆地及南海北部陆架琼东南盆地东部和珠江口盆地的CO2气藏及高含CO2油气藏中CO2均属典型的火山幔源型成因,主要受控于幔源型火山活动脱气与沟通深部气源的基底深大断裂的导气配置作用,其运聚富集规律及控制因素与幔源型火山活动及深大断裂的发育展布密切相关,CO2气源主要来自地壳深部幔源火山活动所脱出的大量原始CO2;南海北部陆架西区莺歌海盆地CO2气藏及中国东部陆相断陷盆地部分高含CO2油气藏中CO2,则属于壳源型及壳幔混合型成因,CO2形成及运聚成藏,主要受控于火山侵入活动对碳酸盐岩的烘烤和泥底辟热流体晚期分层分块多期的局部上侵活动与沉积巨厚的海相含钙砂泥岩的物理化学综合作用,其运聚分布规律具多期和分层分区的特点。

The study shows that in various continental downfaulted basins in eastern China,the China East Sea basin of the southeast sea region and the continental shelf—Qiongdongnan basin and Zhujiangkou basin—of the northern South China Sea,CO2 in CO2 reservoirs and CO2-rich oil/gas reservoirs is of typical volcanic mantle-derived type and that its migration and concentration is mainly controlled by mantle-derived volcanism and gas-conducting distribution of deep basement faults connected with the gas source at depth. CO2 is mainly sourced from substantial amount of CO2 associated with mantle-derived volcanism at the deep level of the crust. CO2 in the CO2 reservoirs and CO2-rich oil/gas reservoirs in the Yinggehai basin on the continental shelf of the northern South China Sea is of crust origin and crust-mantle mixing origin and mainly controlled by local,layer-by-layer and zone-by-zone,multiple intrusion of late hydrothermal fluids in mud diapir areas and physico-chemical processes of very thick Pliocene-Miocene marine calcareous sandstone and mudstone.

研究表明,中国东部陆上诸断陷盆地与东南沿海海域的东海盆地及南海北部大陆架琼东南盆地和珠江口盆地CO2气藏及高含CO2油气藏中,CO2均属典型的火山幔源型成因,其运聚富集主要受控于幔源型火山活动与沟通深部气源的基底深大断裂的导气配置作用,CO2气源主要来自地壳深部幔源火山活动伴生的大量CO2;南海北部大陆架西区莺歌海盆地CO2气藏及含CO2油气藏中的CO2,属于壳源型及壳幔混合型成因,主要受控于泥底辟热流体晚期分层分块多期的局部上侵活动与沉积巨厚海相含钙砂泥岩的物理化学作用,其运聚分布具多期和分层分区的特点。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业,不在行,求高手帮忙。谢谢!具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

This paper develops a high-frequency welding power source with double-ended flyback topology.based on SG3525 a new type of control program is designed which with controlled pulse energy output characteristics, pulse width and frequency can be controlled, to control output energy.

本文给出一种基于双端反激式主电路拓扑和SG3525 PWM控制芯片,研制了一台高频脉冲能量可控式焊接电源,该电源通过对输出电流的脉宽和频率单独控制,从而控制输出能量。

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