查询词典 barrier layer

This indicates the presence of the surface states on the surface of the barrier layer.

近期的研究表明，在GaN和AlxGa1-xN势垒层的表面存在表面态，这对GaN和AlxGa1-xN/GaN异质结中载流子的分布有显著的影响[8～ 11] ，从而对基于调制掺杂AlxGa1-xN/GaN异质结构器件的性能有着很大的影响，会降低载流子浓度和漏电流，减小器件的跨导和阈值电压。

A In this research, the barrier layer of methane plasma was first used in the polymer surface flame retardancy.

本研究首次将炭阻挡层的概念用于聚合物表面阻燃的研究中，以期获得阻燃效果。

So for the die attachment of high temperature devices, suitable barrier layer is needed.

对Au/In体系在未来高温电子器件芯片焊接中的应用，尚需寻找合适的过渡层材料。

A method was designed to conquer difficulty and reduce errors of measuring thickness of the barrier layer.

本文设计的"双层法"使两层阻挡层合而为一，能有效克服阻挡层厚度测量中的困难并减小测量误差，为AAO模板阻挡层厚度的测量提供了一种新的有效的方法。

Again, a barrier layer 111 is formed by discharge treatment in ammonia.

另外，势垒层111由氨中放电处理形成。

It may be attributed to the segregated Ge acting as a diffusion barrier layer at the interface of 〓.

这可归结为〓界面的富Ge层充当了Co向Si〓Ge〓扩散的阻挡层，导致Co的有效扩散系数减小，降低了反应速率。

A method of manufacturing a magnetic tunnel junction device, in which a stack ( 1 ) comprising two electrode layers ( 3, 7 ) and a barrier layer ( 5 ) extending in between is formed.

一种磁性沟道结器件的制造方法，其中形成叠层(1)，包括两个电极层(3，7)，和在其间延伸的阻挡层(5)。

A lowering in output of a pressure wave generator caused by a change in the porous layer with the elapse of time can be prevented by forming the barrier layer.

通过形成该阻挡层，能够防止随着时间的流逝由多孔层中的变化引起的压力波发生装置的输出降低。

The morphology, component and structure of electrolytically etched surface are characterized and the mechanism of electrolytic etching and graining is also discussed based on the theoretical analysis. The components that can form barrier layer or dissolve the resisting layer on the surface of Al-Mg-Si alloy specimens are investigated through voltamperometric and chronoamperometric analysis in several solutions.

通过对Al-Mg-Si合金在各种溶液中的电流密度—电位曲线及电位—时间曲线的测量与分析，筛选出能够在Al-Mg-Si合金表面形成阻挡层的成分和对阻挡层有刻蚀作用的成分，并进行复配实验对比，优选出偏硼酸钠-硼酸、酒石酸-碳酸钠、磷酸钠-正丁酸和柠檬酸钠-柠檬酸等4种图纹电解刻蚀液体系。

The invention has the technical scheme that SIMOX or SIMNI technology in SOI process is locally used for perpendicular conducting power devices, while in conventional power JFET manufacture process, the buried local insulating layer is formed by insulating barrier layer growing, gate area doping window etching, ion injection and high temperature annealing.

其技术方案是：将SOI工艺中的SIMOX或SIMNI技术思路以局域化的方式用于纵向导电的功率器件，在制造功率JFET的常规工艺流程中，通过安排绝缘阻挡层生长、栅极区掺杂窗口刻蚀、离子注入和高温退火等四个工艺步骤，来实现隐埋局域绝缘层。

What are your goals and strategies for growth?

你的成长目标和策略是什么？

And unto the angel of the church in Sardis write; These things saith he that hath the seven irits of God, and the seven star I know thy works, that thou hast a name that thou livest, and art dead.

3：1 你要写信给撒狄教会的使者，说，那有神的七灵和七星的，说，我知道你的行为，按名你是活的，其实是死的。