查询词典 barrier layer

The first one is capital barrier, which means a large amount of initial capital for the perfect monopolizer. This prevents the common enterprise from entrance. The second is the technical barrier, i.e. the monopolizer is in control of certain technology and knack while other enterprises not, and then the market naturally become a monopoly market. Scale economy is the most studied technical barrier. The third one is law barrier, i.e. some exclusive patent rights are protected by the law. For example, patent and copyright are the monopolizations protected by the law. The fourth one is tactic barrier, even without any of the above mentioned barriers; it can also set up barriers through other ways, such as huge amount of advertisement investment.

首先是资本壁垒，即完全垄断企业的起始资本量很大，因此一般的企业难以进入；其次是技术性壁垒，即垄断者掌握了某种生产技术和诀窍，其他企业则没有，这个市场也就自然成了垄断市场，规模经济是一种被研究得最多的技术性壁垒；第三是法律壁垒，有些独家经营的特权是由法律所规定并受到法律保护的，专利和版权就是法律特许的垄断；第四是策略性壁垒，企业即使没有上述三种壁垒，也可以通过其他方式高筑壁垒，例如巨额广告投入。

The new non-tariff barrier system consists of technical barrier, environmental barrier, social barrier and moral barrier.

随着世界贸易组织对关税和传统非关税壁垒的约束，非关税壁垒形成以技术壁垒为核心的，包括技术壁垒、环境壁垒、社会壁垒和道德壁垒在内的新体系，成为当代国际贸易的新贸易壁垒。

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法，於本研究中并无习知砷化镓欧姆接触层的存在，我们利用金/金铍金属藉由热退火程序，使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层，降低磷化镓与氧化铟锡接触产生之接面能障；另外，该元件在氧化铟锡直接欧姆接触於磷化镓窗层下，除亮度具明显提升外，在稍大电流(20毫安培)元件可靠度测试下，亦未有明显衰减情形发生。

The procedure is applied in two projects:(1) Shanghai Huanqiu finance center tower foundation pit dewatering, the complicated flow state of groundwater is simulated under these conditions which the aquifers deposite layer by layer, the bottom of the aquifers goes deep to 149m, the horizontal flow barrier goes deep to 34m, the extraction wells are penetrated to 55m, the filters of the extraction wells are located between 34m to 55m, and the water level in the deep foundation pit is decreased to 26m under land surface, the result of 8 pumping wells optimization project is designed.(2) The forth subway of Dong Jia-du tunnel repair foundation pit dewatering in Shanghai, the complicated flow state of groundwater is simulated under these conditions which the aquifers deposite layer by layer, the bottom of the aquifers goes deep to 144.45m, the horizontal flow barrier goes deep to 65m, the extraction wells are penetrated to 60m, the filters of the extraction wells are located between 45m to 60m, and the water level in the deep foundation pit is decreased to 42.45m under land surface, then an optimization project is designed.

最后将成果分别应用于两个工程实例中：(1)上海环球金融中心塔楼基坑降水，模拟了在多层含水层复合存在、含水层最深底板埋深达149m、基坑周围挡水连续墙埋深达34m、抽水井埋深达55m、抽水井过滤器埋深为34至55m，基坑内地下水位降至埋深达26m的情况下的地下水复杂流动状态，得出了8口抽水井优化降水方案；(2)上海地铁4号线董家渡隧道修复基坑降水，模拟了在多层含水层复合存在、含水层最深底板埋深达144.45m、基坑周围挡水连续墙埋深达65m、抽水井埋深达60m、抽水井过滤器埋深为45至60m，基坑内地下水位降至埋深达42.45m的情况下的地下水复杂流动状态，确定出了最优降水方案。

The device, from above to below, includes a floor decoration layer, a phase-changing material layer, an air duct, a radiation protection film, a thermal insulation layer and a floor base layer in turn; keels are arranged between the floor decoration layer and the floor base layer, at least a heat supply waterpipe or a electrical heating film are buried in the phase-changing material layer between adjacent keels; a wind gap is arranged at both ends of the air duct to communicate with indoor air.

该装置自上而下依次包括地板装饰层、相变材料层、空气通道、防辐射膜、保温层和地板基层；在地板装饰层和地板基层之间设有龙骨，在相邻龙骨之间的相变材料层中埋有至少一根供热水管或一个电加热膜；在空气通道的两端设有风口与室内空气相通。

According to core observation and description, many deformation structures with seismite characteristics are recognized within sandstone and shale sedimentary strata of Paleogene continental faulted basin in Yangxin Subsag, such as micro-faults, earthquake fissures, liquefaction sandstone veins, water-escape structure, vibrational liquefaction deformation structure, seismic pillow structure and associated structure, etc. The vertical sequence of seismites in Yangxin Subsag, in ascending order, is underlying unshocked layer, micro-faults layer, autoclastic shattered breccia layer, vibrational liquefaction deformation structure layer, seismic pillow structure and associated structure layer, liquefied homogeneous layer and overlying unshocked layer, which corresponds to different earthquake intensity respectively.

通过岩心观察和描述，在阳信洼陷古近系陆源碎屑断陷湖盆砂泥质沉积地层中识别出大量具有震积岩特征的变形构造，如微断层和震裂缝、水下岩脉和泄水构造、振动液化卷曲变形构造、震积枕状层及伴生构造等，同时建立了阳信洼陷震积岩垂向序列，自下而上分别是下伏未震层段、微断层层段、震碎角砾岩段、振动液化卷曲变形层段、震积砂枕及伴生构造层段、液化均一层段和上覆未震层段。

The outer neuroblastic layer before it divided to inner and outer nuclear layer and outer complexiform layer and gonglion cell layer showed a temporal PCNA positive which was related to proliferation. The three cell layers had another PCNA positive when finished time changed from outer to inner after their morphologic development basically completed( outer nuclear layer:11～15 days,inner nuclear layer: 8～16 days, gonglion cell layer:16～21 days).

PCNA显示在外成神经细胞层分化为内、外核层和外丛状层之前，和节细胞各有一次和增殖相关的阳性表达。3个细胞层在形态学的分化基本完成后，又出现了一次结束时间是由外向内变化的阳性过程（外核层：第11天至15天：内核层：第8天至16天，神经节细胞层： 16天到21天，这一次阳性表达过程可见到细胞形态向成年形态的转化。

The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si.sup.+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer.

专利简介本发明系关於一种紫外光检测器及制程方法，其主要系在一基板上形成一缓冲层，利用磊晶法在缓冲层上形成一P型氮化镓系层，并接著以离子布植技术将Si+离子适当地布植於该P型氮化镓系层中，形成一N型氮化镓系层及包覆在此N型氮化镓系层中且布植浓度更高的另一N型氮化镓系层，最后在该P型氮化镓系层及第二N型氮化镓系层上分别镀上一环状金属层及另一金属层，以作为欧姆接触层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

The results showed that the structure of retina in Lasiopodomys mandarinus exhibited typical structure of vertebrates, including retinal pigment epithelium, rod cone layer, outer nuclear layer, outer plexiform layer, inner nuclear layer, inner plexiform layer, ganglion cell layer, and nerve fiber layer from outside to inside.

结果表明，棕色田鼠的视网膜结构呈典型的脊椎动物视网膜结构类型，由外向内分别为色素上皮、视锥视杆层、外核层、外网层、内核层、内网层、节细胞层、神经纤维层。

This is the inheritance of the tribe of the children of Issachar according to their families, the cities and their villages.

19：23 这些城并属城的村庄就是以萨迦支派按着宗族所得的地业。

I've have enough of your garbage.

我听了你的废话。