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abscission layer相关的网络例句

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According to core observation and description, many deformation structures with seismite characteristics are recognized within sandstone and shale sedimentary strata of Paleogene continental faulted basin in Yangxin Subsag, such as micro-faults, earthquake fissures, liquefaction sandstone veins, water-escape structure, vibrational liquefaction deformation structure, seismic pillow structure and associated structure, etc. The vertical sequence of seismites in Yangxin Subsag, in ascending order, is underlying unshocked layer, micro-faults layer, autoclastic shattered breccia layer, vibrational liquefaction deformation structure layer, seismic pillow structure and associated structure layer, liquefied homogeneous layer and overlying unshocked layer, which corresponds to different earthquake intensity respectively.

通过岩心观察和描述,在阳信洼陷古近系陆源碎屑断陷湖盆砂泥质沉积地层中识别出大量具有震积岩特征的变形构造,如微断层和震裂缝、水下岩脉和泄水构造、振动液化卷曲变形构造、震积枕状层及伴生构造等,同时建立了阳信洼陷震积岩垂向序列,自下而上分别是下伏未震层段、微断层层段、震碎角砾岩段、振动液化卷曲变形层段、震积砂枕及伴生构造层段、液化均一层段和上覆未震层段。

The outer neuroblastic layer before it divided to inner and outer nuclear layer and outer complexiform layer and gonglion cell layer showed a temporal PCNA positive which was related to proliferation. The three cell layers had another PCNA positive when finished time changed from outer to inner after their morphologic development basically completed( outer nuclear layer:11~15 days,inner nuclear layer: 8~16 days, gonglion cell layer:16~21 days).

PCNA显示在外成神经细胞层分化为内、外核层和外丛状层之前,和节细胞各有一次和增殖相关的阳性表达。3个细胞层在形态学的分化基本完成后,又出现了一次结束时间是由外向内变化的阳性过程(外核层:第11天至15天:内核层:第8天至16天,神经节细胞层: 16天到21天,这一次阳性表达过程可见到细胞形态向成年形态的转化。

The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si.sup.+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer.

专利简介本发明系关於一种紫外光检测器及制程方法,其主要系在一基板上形成一缓冲层,利用磊晶法在缓冲层上形成一P型氮化镓系层,并接著以离子布植技术将Si+离子适当地布植於该P型氮化镓系层中,形成一N型氮化镓系层及包覆在此N型氮化镓系层中且布植浓度更高的另一N型氮化镓系层,最后在该P型氮化镓系层及第二N型氮化镓系层上分别镀上一环状金属层及另一金属层,以作为欧姆接触层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管,包括P型衬底,在P型衬底上设有P型阱和N型漂移区,在P型阱上设有P型接触孔、N型源及场氧化层,在N型漂移区上设有N型漏及场氧化层,其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层,在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

The results showed that the structure of retina in Lasiopodomys mandarinus exhibited typical structure of vertebrates, including retinal pigment epithelium, rod cone layer, outer nuclear layer, outer plexiform layer, inner nuclear layer, inner plexiform layer, ganglion cell layer, and nerve fiber layer from outside to inside.

结果表明,棕色田鼠的视网膜结构呈典型的脊椎动物视网膜结构类型,由外向内分别为色素上皮、视锥视杆层、外核层、外网层、内核层、内网层、节细胞层、神经纤维层。

Abscission occurs at specific sites called abscission zones.

器官脱落发生的区域叫做离区。

In order to understand the relationship between endogenous phytohormones and preharvest fruit drop of apples, contents of IAA and ABA in peduncle, bourse and the tissues around abscission zone of several apple cultivars were periodically analyzed during 8 weeks before harvest, and activity of cellulase in the tissues around abscission zone were periodically analyzed during 20 days before harvest, and ethylene evolution in fruit were analyzed in harvest time.

为了探讨苹果采前落果与内源激素之间的关系,在采前8周间定期测定了不同苹果品种的果柄、果台和离层形成部位组织中IAA、ABA含量;在采收前20d内定期测定了离层部位组织中细胞壁分解酶的活性;在收获期测定了果实乙烯的发生量。

Results showed that contents of IAA and ABA in peduncle, bourse and the tissues around abscission zone among several cultivars were very different, but their trend of change was similar, IAA content decreased and ABA content increased toward harvest time for all the cultivars. Ethylene evolution in fruit of the cultivars with higher preharvest drop was evidently higher than the cultivars with less preharvest drop. Cellulase activity in the tissues around abscission zone of the cultixars with higher prehanest drop rapidly increased toward harvest time.

结果表明:不同品种果柄、果台和离层部位组织中IAA和ABA含量变化有差异,但它们变化的总趋势相似,都是随着果实成熟IAA含量下降,而ABA含量上升;不同品种的成熟果实中乙烯发生量有很大差异,以落果多的品种显著大于落果少的品种;采前落果重的品种离层部位组织中细胞壁分解酶的活性在果实成熟期急剧增加。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料;在基质材料上外延生长形成变换叠加的垒层和阱层,在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质,得选择超晶格位置掺杂的p型III族氮化物材料,其中,每个生长周期的步骤为:生长带隙较宽的垒层,同时掺入受主杂质;生长施主杂质或受主杂质δ掺杂层;生长非掺的带隙较窄的阱层;生长受主杂质或施主杂质δ掺杂层;在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火,即得目标产物。

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法,於本研究中并无习知砷化镓欧姆接触层的存在,我们利用金/金铍金属藉由热退火程序,使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层,降低磷化镓与氧化铟锡接触产生之接面能障;另外,该元件在氧化铟锡直接欧姆接触於磷化镓窗层下,除亮度具明显提升外,在稍大电流(20毫安培)元件可靠度测试下,亦未有明显衰减情形发生。

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