查询词典 Meridian Gate

There are more than 3000 different kinds of valves available. The products series cover hydraulic turbine input liquid control butterfly valve, soft sealing gate valve, clamp butterfly valve; flange valve, expansion butterfly valve, bi-direction metal seal ing butterfly valve, tri-eccentric metal sealing butterfly valve, eccentric semi - sphere ball valve, eccentric dual -semi - sphere ball valve, and sluice gate, hydraulic slow-closing c heck v alve , v ent valve, adjusting valve, body eccentric valve, dual eccentric butterfly valve, varied eccentric butterfly valve, Check valve with little-resistance, slow-closing, noise-eliminating , butterfly valve with mid temperature and pressure, Other types of check valves and check valve gate 、 expansion joint, and being widely used in petroleum industry, chemistry, food, medicals, light industry, paper, water and electricity, ship and boat, steel and casting, Energy and Environment industry. The main valves are ever used in heat-supplying projects of National council office.

我公司主要产品有双向三偏心金属密封伸缩蝶阀、水轮机进水液控蝶阀、软密封闸阀、三维偏心全金属密封蝶阀、自动补偿双向硬密封蝶阀、耐高温金属密封蝶阀、液控缓闭止回蝶阀、对夹式蝶阀、偏心式蝶阀、伸缩蝶阀、偏心半球阀、偏心球阀、通风阀、调节阀、双偏心蝶阀、无销蝶阀、微阻缓闭消声止回阀、旋启式止回阀、防泥沙型蝶阀、自动补水阀、阀板可移动蝶阀、偏心缓闭止回阀、多功能水力控制阀、闸门、伸缩接头和管道伸缩器等三十大系列3000多个规格，广泛用于电力、石油、化工、食品、医药、轻纺、造纸、供排水、船舶、冶炼、能源、环保等行业的腐蚀性、非腐蚀性气体、液体、半流体及固体粉末容器和管网中。

QB Series Knife Gate Valve absorb the advantages of technology and structure both at home and aboard to exclude other knife gate valves' shortcomings when using . This knife gate valve is made up withe body 、disc、stem、stem nut、sealing ring and operation parts.

QB型系列刀闸阀吸取了国内外先进技术和结构优点，排除了其他厂家所产刀闸阀在使用中存在的问题，此阀门主要由阀体、闸板、阀杆、阀杆螺母、密封圈、操作件组成。

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。

In order to bring about the spatial depth resolution of the image data obtained, the method according to the invention comprises the following steps: an electromagnetic wave is beamed onto the surface of a photonic mixed element comprising at least one pixel, the pixel having at least two light-sensitive modulation light gates Gam and Gbm and associated accumulation gates Ga and Gb; modulation light gate voltages Uam and Ubm, which are configured as Uam=Uo Um and Ubm=Uo-Um, are applied to the modulation light gates Gam and Gbm; a direct voltage, whose magnitude is at least the same as that of the total of Uo and the amplitude of the modulation voltage Um, is applied to the accumulation gates Ga and Gb; the charge carriers produced in the space charge region of the modulation light gates Gam and Gbm by the incident electromagnetic wave are subjected, as a function of the polarity of the modulation light gate voltages Uam and Ubm, to the potential gradient of a drift field and drift to the corresponding accumulation gate Ga or Gb; and the charges qa and qb which have drifted to the accumulation gates Ga and Gb, respectively, are diverted.

为了使得采用这样一种方法获得的图象数据具有空间深度分辨率，按照本发明的方法包含下述步骤：使电磁波成束在至少包含一个象素的光混合元件的表面上，该象素至少具有两个光敏调制光门G am 和G bm 以及相关的累积门G a 和G b ；将调制光门电压U am 和U bm 施加到调制光门G a 和G b 上，而调制光门电压的构成是U am=U o U m，U bm=U o -U m；将直流电压施加到累积门G a 和G b 上，而直流电压的幅度至少与U o 和调制电压U am的幅度的总和相同；使由入射电磁波在调制光门G am 和G bm 的空间电荷区中产生的载流子经受漂移场的电位梯度，并漂移到相应的累积门G a 或G b ，而电磁波是调制光门电压U am和U bm的极性的函数；已经分别漂移到累积门G a 和G b 的电荷的方向反向。

With GTOs, a positive gate pulse will cause turn-on and a negative gate plus will cause commutation or turn-off.

与地面观测系统，积极门脉冲会使开启和一负，加上闸门，将导致减刑或关机。

NBTI effects can also be influenced by ratio of signal and vacancy. The dynamic characteristics in NBTI degradation was revealed under action of negative and positive gate voltage, degradation can be recovered by positive gate voltage stress.

在负-正-负栅压交替作用下PMOSFET器件中会呈现退化-钝化-退化的动态作用过程，正栅压作用下的PMOSFET器件特性退化会有一定程度的恢复，这是由于在正栅压作用下NBTI反应产物逆向向Si／SiO〓界面处运动从而发生钝化作用造成的。

There are no sufficient holes to follow the negative AC bias stress when high frequency is chosen. Due to the operation of the flat panel displays is under AC signal, therefore we discuss the degradation under DC and AC bias stress which include positive and negative bias stress on gate and drain of TFTs. What's more, we discuss asynchronous gate and drain bias stress on TFTs, and study the degradation mechanisms.

因为实际面板在运作时就是闸极与汲极采用交流方式操作，所以接著探讨在闸极上与汲极上给予直流正、负偏压与交流正、负偏压应力测试，来比较非晶矽薄膜电晶体在闸极与汲极分别有偏压下，电晶体的最大衰退变化量，再加上闸极与汲极给予非同步偏压的状况，探讨此一非同步状况对於电晶体的影响，以及了解是哪些机制造成如此差异。

Can discover immediately, do not know to be kicked to go up by the child of whose home archness on the gate a lot of small footmark, he is forced to whitewash the gate afresh, but very fast, be kicked to go up again a few new black track.

可很快地发现，大门上不知道被谁家调皮的孩子踢上去很多小脚印，他只好将大门重新粉刷一遍，可很快，又被踢上去一些新的黑脚印。

This design for protects from fire the volume curtain gate intelligence control device design, also realizes the monolithic integrated circuit automatic control fire protection volume curtain gate, this design selects cpu is 89c52, the smallest system has the replacement and the address lock saves the function.

本设计为防火卷帘门智能控制装置设计，既实现单片机自动控制防火卷帘门，本设计选用的cpu为89c52，最小系统具有复位和地址锁存功能。

In these years, the projects which we have designed、processed and installed are: entrance gate stockade of Ming Ze Garden、entrance gate stockade of Bansdo、stockade of Civic Committee Party School、balcony protect stockade of Sunshine Garden、baluster of window falling to the ground、balcony protect stockade of Century Garden、stockade of Jinshitan Model School and etc.

几年来先后设计、加工并安装的工程有明泽苑大门栅栏、棒棰岛大门栅栏，市委党校栅栏、阳光家园阳台护栏、落地窗栏杆及外围栅栏、世纪家园阳台护栏、金石滩模特学校栅栏等大型铁艺工程。

In the chapter 2, the theoretic knowledge about the photosensitive resin and the grinding tools was firstly introduced.

第二章阐述了光固化树脂结合剂磨具的相关理论研究。

Do not use the program's indenting or margin-setting features; these will be added during typesetting.

不要使用缩排，页面边缘设置之类的选项，偶看不大懂。