查询词典 Hall effect

Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have an effect on electron mobility of GaN.

考虑了对纤锌矿型氮化镓低场电子输运影响最为显著的4种散射机制－电离杂质散射，极化光学波散射，声学波压电散射和声学声子形变势散射的单个平均动量驰豫时间，采用Mattiessen's rule计算了不同补偿率以及不同载流子浓度条件下，氮化镓电子漂移迁移率，霍耳因子以及霍耳迁移率随温度的变化。

X-ray diffraction was used to analyze the crystal structure and the field-emission scanning electron microscopy inspected the surface and cross-sectional morphology. X-ray photoelectron spectroscopy is used to determine the film composition. The optical transmittance, electric resistance, Hall Effect, and Seebeck coefficient were measured. It was found in XRD patterns that all samples possess In2O3 structure.

在特性量测方面，分别以X光绕射分析其晶体结构，场发射扫瞄式电子显微镜分析其表面及断面型态，以X光电子能谱分析仪分析薄膜成份，并搭配光穿透率、电阻率、霍尔效应及Seebeck系数等特性分析，探讨经热处理之后薄膜的热电特性变化。

The composition of the SiGe thin films were controlled by changing the ratio of the area of silicon and germanium. By changing the parameters of substrate temperature and annealing temperature, we examined the microstructure, composition, crystallinity, electrical and thermoelectric properties by field emission scanning electron microscope, X-ray photoelectric spectroscopy, secondary ion mass spectrometer, X-ray diffraction, Hall effect and Seebeck coefficient measurement.

利用改变矽锗靶材面积比例进行薄膜成份的控制，并藉由改变基板温度以及退火温度之制程参数，利用场发射扫描式电子显微镜、化学分析电子能谱仪、二次离子质谱仪、X光绕射仪、霍尔效应量测仪以及自组装之热电量测系统作为分析仪器，分别量测薄膜表面形貌、横截面、成分、结晶性质、电性以及Seebeck系数等特性。

When placing the semiconductor carrying current in the magnetic field axial to the current direction, the semiconductor will generate transverse galvanomagnetic phenomenon, namely generate electromotive force in the direction axial to the magnetic field and current, which is Hall Effect.

把载有电流的半导体放在垂直于电流方向的磁场中时，半导体会产生横向磁场电现象，即：在垂直于磁场和电流的方向产生电动势，这就是霍尔效应。

Then we formulates simple basic definition of fuzzy sphere, two kinds of quantum Hall effect and noncommutative Chern-Simons theory.

接着对模糊球、两种量子霍尔效应以及非对易Chern-Simons理论的基本概念作了简单的描述。

The Hall effect,XPS,optical absorption,Raman scattering,and cathode luminescence have been used to study the electrical properties,crystal quality,and defects of indium-doped bulk ZnO single crystals grown by the chemical vapor transport method.

张璠 中国科学院半导体研究所，北京 100083赵有文中国科学院半导体研究所，北京 100083董志远中国科学院半导体研究所，北京 100083张瑞中国科学院半导体研究所，北京 100083杨俊中国科学院半导体研究所，北京 100083研究了In掺杂n型ZnO体单晶的化学气相传输法生长和材料性质。

In2O3 thin films were prepared on glass substrates by radio frequency magnetron sputtering. The structural, electrical and optical characteristics of In2O3 films were investigated by atomic force microscope, X-ray diffraction, X-ray photoelectron spectroscope, UV-Visible spectrophotometer and Hall effect measurements.

采用射频磁控溅射法在玻璃衬底上制备氧化铟薄膜，通过测试原子力显微镜、X射线衍射、X射线光电子谱、紫外可见分光光度计以及霍尔效应，研究了氧化铟薄膜的结构和光、电特性。

The device consists of a single-shot molded plastic package that includes a samarium cobalt pellet, a pole piece, and a Hall effect IC that has been optimized to the magnetic circuit.

该装置由一个单杆模压塑料封装，包括一个钐钴颗粒，一极片和霍尔效应集成电路已优化的磁路。

This result provides a new explanation to the so-called re-entrant integral quantum Hall effect.

此外，我们通过一个简化的模型，证明随着填充因子增加，从Bubble相到条纹相之间发生不连续相变。

Please note that these switches are compatible with all Numatics magnets with the exception of older style Hall effect magnets for tie rod cylinders （magnet code 3 option）.

请注意，这些开关是与年纪较大的风格馆拉杆气缸（磁代码3选择）起磁铁外，所有纽曼帝克磁铁兼容。

Chrysanthemum of 10 thousand birthday is lax to edaphic requirement, with the arenaceous qualitative loam with fecund, good drainage had better.

万寿菊对土壤要求不严，以肥沃。排水良好的砂质壤土为好。

He unstepped the mast and furled the sail and tied it.

他拔下桅杆，把帆卷起，系住。