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Ge相关的网络例句
与 Ge 相关的网络例句 [注:此内容来源于网络,仅供参考]

X-ray diffraction is one of the most common and efficient ways to measure a superlattice structure. This dissertation displays the detail results for characterization of Ge〓Si〓/Si superlattices by x-ray diffraction (including x-ray small angle diffraction and double crystal diffraction). It was found, when the growth temperature is lower, the intensities of xray small angle diffraction peaks are modulated by a periodical function, which indicates that both sets of interfaces of the superlattice is highly flat; when the growth temperature is higher, the diffraction peak intensities are simply decay with the increase of diffraction vector, which indicates that one set of interfaces is highly flat but another is not; when the growth temperature is very high, the diffraction peaks are reduced more rapidly, which indicates that both sets of interfaces are not ideal.

本文详细介绍了用X-射线衍射(包括X-射线小角衍射和双晶衍射)方法对Ge〓Si〓/Si超晶格结构特性测试的结果,尤其是发现,当Ge〓Si〓/Si超晶格的生长温度较低时,X-射线小角衍射谱峰的强度随着衍射波矢的增加而周期性调制,表明超晶格的两套界面都十分平整;当生长温度较高时,Ge〓Si〓Si超晶格的X-射线小角衍射谱峰的强度随着衍射波矢呈简单的衰减变化,对应于超晶格内有一套界面不平整的情况;当生长温度进一步提高时,X-射线小角衍射峰明显减少,表明超晶格内两套界面都不理想。

GE provides another example: after it bought Amersham, a British nuclear medical systems company, it moved the head office of GE Medical from Milwaukee to Buckinghamshire.

GE是又一个例子:在它收购了英国的核医疗系统公司Amersham之后,它就将GE医疗业务的总部从密尔沃基搬到了白金汉郡。

GE Intelligent Platforms is headquartered in Charlottesville, VA and is part of GE Enterprise Solutions.

GE智能平台总部设在美国弗吉尼亚州的夏洛茨维尔,是GE企业解决方案业务集团的一员。

Ge-132 possessed the remarkab le resistance effects on aflatoxinB1 AFB1 reduces Superoxide Dismutase ac tivity in vivo during AFB1 -induced hepato-carcinogenesis for short term model e xperiments. The SOD activity can be effected by the time and the dosage of Ge-13 2 englobement. The results indicated that antioxidative ability of Ge-132 is rel ated to its anticarcinogenicity.

在AFB1致大鼠肝癌体内短期实验模型中发现,Ge-132具有抵抗黄曲霉素(Aflatoxin B1简称AFB1)降低超氧化物歧化酶(Superoxide Dismutase 简称SOD)活力的作用,Ge-132的摄入时间、剂量可影响SOD活力大小。

The crystallization temperature of amorphous Gein Ge-Aurnonolayer films can be reduced by increasing the content of Au.The as-deposited Ge-5at%Au monolayer films are amorphous and can becrystallized at 150℃.

Ge-Au合金单层膜中Au含量的增加,可以使非晶Ge的晶化温度(纯非晶Ge晶化温度为400℃)降低,如Ge-5at%Au单层膜原态为非晶态,晶化温度为150℃。

Cooling the Ge-bearing alloy so as to crystallise either Ge or a Ge-enriched phase involves a significant purification of the Ge, which reduces the energy and time needed in the following purification step.

冷却含Ge合金从而使Ge或Ge富集相结晶都包括对Ge的显著提纯,这减少了在随后的提纯步骤中所需的能量和时间。

Assuming the company can revive GE Capital, there might be a case for hanging on to that business even if its margins are squeezed. By refocusing on its original mission, a stripped-down finance unit could help drive sales at GE's industrial operations by providing finance for large infrastructure projects and other activities. But investors would need cast-iron reassurance that the business would be kept out of the freewheeling activities in which it has come a cropper.

假设GE可以使GE金融复苏,即使他俩的边界被划得清清楚楚,但GE仍将面临一个棘手的问题:虽然拆分后的GE金融可以回归最初的使命,为GE的各项工业运营中的大型技术设施建设项目和其他活动提供金融支持,促进销售,但投资们在这个毫无约束的经济活动中栽了跟头之后,他们需要一个强有力的保证,GE金融一定不会再像从前这般运营了。

Therefore in ideal case, the hydrogen molecules will start to desorb from Ge-Ge dimers at a lower temperature, from Ge-Si dimers at a middle-high temperature, and from Si-Si dimers at a high temperature.

在理想状态下,在较低的加热温时氢分子应从Ge-Ge双原子单体开始脱附,在稍高的温度由Ge-Si脱附,在更高的温度才会由Si-Si脱附。

GE's highly-successful, well-proven LM2500 aeroderivative gas turbine is directly derived from GE's CF6 family of commercial aircraft engines and GE's TF39 military engine.

GE's 高成功,很好被证明的 LM2500 aeroderivative 汽轮机从GE 的商用飞机引擎和GE 的TF39 军事引擎CF6 家庭直接地被导出。

By taking the effects of Ge fraction and strain on the energy band structure and effective masses into account, the analytical model of the effective densities of states of the conduction and valence bands are proposed, and the temperature and Ge fraction dependence of the effective densities of states are also studied. Following this, the temperature and Ge fraction dependence of intrinsic carrier concentration in strained SiGe layers are analytically calculated. Furthermore, carder freezeout effect and the minority carrier trapping effect of the shallow-level compensated imputities in strained SiGe layers at low temperatures are investigated.

其中,分析了应变SiGe层的临界厚度、能带结构、禁带宽度及禁带变窄模型;在考虑了Ge组份和应力对应变SiGe层能带结构的影响后,给出了较为精确的SiGe应变层的导带和价带有效状态密度的模型,并研究了有效状态密度与Ge组份及温度的变化关系;分析了应变SiGe层的本征载流子浓度及重掺杂下的禁带变窄;讨论了低温下应变SiGe层中的载流子冻析效应,并计算了SiGe应变层的电离杂质浓度与Ge组份及温度的关系;研究了应变SiGe层低温浅能级补偿杂质的陷阱效应;给出了应变SiGe层多数和少数载流子迁移率以及少数载流子寿命模型。

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