- 更多网络例句与薄膜电阻相关的网络例句 [注：此内容来源于网络，仅供参考]
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The higher resisitivity of the diamond films is an essential factor to its applications in electronics, radiation dosimeter and so on.
金刚石薄膜电阻率的高低是薄膜绝缘性能优劣的直观反映，也是影响辐射剂量计器件性能的重要因素。
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The crystalline mechanism difference of microcrystalline and polymorphous silicon was investigated by thermal gradient theoretical and hydrogen etching model.
研究电阻对时间的依赖关系表明氢化硅电阻值随测试时间增大而增大，XPS测试结果表明薄膜的氧化增大了薄膜电阻。
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The effects of both interface diffusion and chemical reaction on TiSi〓 silicide growth were considered in this model.
薄膜电阻的研究也表明，在600℃RTA时，就开始有TiSi〓低电阻相形成。
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In order to solve this problem that the temperature coefficient of the Chromium-film resistance fabricated at first was low, the main factors effecting on temperature coefficient are studied in this paper on the basis of film theory and experiments.
针对初期制备的铬薄膜电阻温度系数较低的问题，根据薄膜理论分析，研究了影响铬薄膜电阻温度系数的主要因素，根据实验结果不断改进铬薄膜电阻制备工艺，最终制作出了基本满足检测要求的热敏电阻薄膜。
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Vanadium oxide thin films deposited on slide glass substrates are prepared by facing-target magnetron sputtering.The effect of sputtering conditions on temperature coefficient of resistance is analyzed by orthogonal experiment,and the optimum process recipes are achieved,including Ar∶O2=48∶0.4,gas pressure is 2 Pa,substrate temperature is 27 ℃,sputtering power is 180 W.
利用对靶磁控溅射法在玻璃基片上制备VOx薄膜，采用正交实验方法研究了镀膜条件对VOx薄膜电阻温度系数的影响，得到优化的镀膜工艺参数，主要包括Ar∶O2为48∶0.4、工作压力恒定为2 Pa、基底的温度为室温27℃、溅射功率保持在180W，在此基础上，进行不同温度条件的真空退火，得到薄膜TCR在-2.5%~-4.5%范围。
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XRD results indicate that the major diffraction peaks of the film match those of Sb2Te3. The film growth is apparently at the ［101］/［012］ orientation and many Te peaks are observed. Hall measurement reveals that all the samples are p-type and the resistivities are low. The electric conductivity of the films approaches that of the bulk metal and the carrier concentration is of 1023 cm-3. Seebeck coefficient measurement shows that the samples have nice thermoelectrical properties and the seebeck coefficients are in the range of 7.8—62 μV/K. Among all, the samples annealed at 200 ℃ for 6 h have the highest seebeck coefficient of about 62 μV/K and the lowest resistivity.
XRD测量结果显示，薄膜的主要衍射峰与Sb2Te3标准衍射峰相同，在［101］/［012］晶向取向明显，存在较多的Te杂质峰；霍尔系数测试结果表明，薄膜为p型半导体薄膜，薄膜电阻率较低，其电导率接近于金属电导率，载流子浓度量级为1023 cm-3，具有良好的电学性能；Seebeck系数测量结果显示，薄膜具有良好的热电性能，在不同条件下制备的薄膜的Seebeck系数在7.8—62 μV/K范围；在所制备的薄膜中，退火时间为6 h、退火温度为200 ℃的薄膜其Seebeck系数达到最大，约为62 μV/K，且电阻率最小。
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From FT-IR we think that the hydrogen bond between the polar oxygenous group on the thin film surface treated with plasma and acetone molecules would enlarge the distance between the carbon black particles, resulting in the addition of the electrical resistance, then the response behavior of the thin film to acetone was improved greatly.
我们通过FT-IR研究认为，等离子体处理后，薄膜表面引进的极性含氧基团与丙酮分子之间氢键的形成会增大炭黑粒子之间的距离，导致了薄膜电阻的极大增加，使薄膜对丙酮蒸气的响应得到很大改善。
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However, the value of magnetoresistance increased apparently after annealing and was 1.74 times the unannealed sample. XRD structural analysis shows that peak intensity of the annealed sample is greater than that of the unannealed one which demonstrated an increase of crystallinity.
实验结果表明：退火后样品的薄膜电阻率显著减小，是未退火样品薄膜电阻率的3.17分之一；而退火后磁电阻值则明显增加，是未退火时的1.74倍；XRD结构分析显示，退火后薄膜样品的峰值强度大于未退火样品的强度，说明样品结晶度增强。
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In this dissertation,preparation and thermoelectric characterization of conventional silicon-based materials and devices have been studied, including amorphous silicon films, polycrystalline silicon germanium films and amorphous silicon thin-film-transistors. A novel MEMS-IC integration method based on porous silicon micromachining has been developed, which is used to fabricate resistive bolometers with a-Si and polySiGe films, and a-Si TFT-based room-temperature infrared detector pixels and 8×8 arrays with primary capability of thermal imaging have been reported for the first time.
本文深入系统地研究了a-Si薄膜、polySiGe薄膜和a-Si TFT等三种常规硅基材料和器件的制备方法和热电特性，开发了一套新型的基于多孔硅牺牲层技术的MEMS-IC集成工艺，利用该工艺成功地制作了a-Si和polySiGe薄膜电阻式测辐射热计，在国际上首次提出并实现了基于a-Si TFT的室温红外探测器单元与8×8阵列原型，器件初步具备了室温红外热成像的能力。
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Below T_(M1),the resistivity increase under photo inducing. The maximum resistivity change(Δρ/ρ_0) in the La_(0.82)Te_(0.18)MnO_3 sample can reach 51.1% in 253K which is more large than that of hole-doped manganites. Above T_(M1) there is a photoconduction.
在低温区，激光的照射使得薄膜电阻率增大，其中La_(0.82)Te_(0.18)MnO_3在253K下的电阻变化率达到峰值51.1%，这比已有的报道中相同条件下的空穴掺杂材料有很大的提高；在高温区激光作用产生了较小的光电导现缘。
- 更多网络解释与薄膜电阻相关的网络解释 [注：此内容来源于网络，仅供参考]
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filminess：极薄
filminess 轻如薄膜 | filminess 极薄 | filmistor 薄膜电阻
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filminess：极薄/轻如薄膜
filmily /薄皮地/像软片地/朦胧地/ | filminess /极薄/轻如薄膜/ | filmistor /薄膜电阻/
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thin-film recording head：薄膜记录头
thin-film processing 薄膜处理 | thin-film recording head 薄膜记录头 | thin-film resistor chips 薄膜电阻组件
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Temperature coefficient of film resistance：薄膜电阻温度系数
桩极限端阻力:ultimate tip resistance of pile | 薄膜电阻温度系数:Temperature coefficient of film resistance | 桩:Pile
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thin-film resistor：薄膜电阻,薄膜电阻器
thin-film rectifier 薄膜整流器 | thin-film resistor 薄膜电阻,薄膜电阻器 | thin-film scanner 薄膜扫描机
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thin-film resistor：薄膜电阻
薄膜物理学 thin-film physics | 薄膜电阻 thin-film resistor | 生光 (日月食) third contact
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carbon filmed RF resistor：覆碳薄膜电阻器
matching resistor匹配电阻 | carbon filmed RF resistor覆碳薄膜电阻器 | residual resistance残余电阻
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thin-film resistors：薄膜电阻
thin-film resistor chips 薄膜电阻组件 | thin-film resistors 薄膜电阻 | thin-film technology 薄膜技术
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measuring methods of surface resistivity for glass substrates：玻璃衬底表面电阻率试验方法
l2108 玻璃衬底薄膜粘合性试验方法 testing methods for ... | l2109 玻璃衬底表面电阻率试验方法 measuring methods of surface resistivity for glass substrates | l2110 玻璃衬底表面润湿性测定方法 testing meth...
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nichrome：镍铬铁合金
Stackpole表示,镍铬铁合金(nichrome)作为薄膜电阻元件的优点,一直在于能以0.1%的容差和25ppm的TCR提供较宽的电阻范围. 该公司指出,关键是利用相对便宜的镍铬铁合金薄膜技术可以获得很高的稳定性.