耗尽层

词组短语

depletion layer

与耗尽层相关的网络例句 [注：此内容来源于网络，仅供参考]

The formation of a cation depletion layer is a key factor to obtain large SON in glass.

阳离子耗尽层的形成是获得大二阶光学非线性的一个关键因素，需要满足一定的条件。

Consequently, sulphidic bottom waters on continental shelves may be more common than previously believed, and could therefore have an important but as yet neglected effect on benthic communities.

关于硫化物会被亚表层海水中的细菌完全耗尽、从而会被浅层沿海水域的遥感或监测活动忽略的发现表明，大陆架上含硫化物的海底水域也许要比我们所想的更普遍，所以有可能对底栖生物群落产生一个重要的、但以前却被忽略的影响。

According to physical properties of semiconductor devices, the CCD with proper depletion layer is probable to be used for energetic particle detectors of high sensitivity.

根据半导体器件的物理性质，拥有适当耗尽层区间的CCD器件有可能成为高度敏感的高能粒子探测器。

The results show that the depletion layer grows in the form of hyperbolic tangent function of time, the electric field strength at the interface increases with bonding time to its maximum and the field strength in the bulk glass decreases, and that the fulfillment of the anodic bonding is determined by the completion of intimate contact rather than the charge transfer.

结果表明：碱金属离子耗尽层厚度以连接时间的双曲正切函数形式增长；界面电场强度随连接时间单调上升，而耗尽层外的玻璃内电场强度单调下降；电场辅助阳极连接是否完成决定于待连接表面间是否形成紧密接触，而非电荷迁移量是否达到某一恒定值。

Base on the threshold voltage model presented, an intrinsic drain current model in strong inversion region is developed, which can describe the short-channel effects such as DIBL and charge-sharing effect well, and give special considerations for mobility, velocity saturation, channel length modulation and quantum effect. Based on the front interface surface potential model, a formula of unified inversion charge is derived, and an intrinsic drain current model in middle inversion region is developed.

利用所提出的深亚微米FD器件正、背界面表面势模型，建立了一个能够完整描述深亚微米FD器件本征亚阈漏电流特性的模型，能够准确地描述DIBL效应和背沟道漏电效应；利用所提出的阈值电压模型，建立了深亚微米全耗尽器件的本征强反型电流模型，很好地描述包括DIBL效应、电荷分配效应在内的小尺寸效应，对迁移率、速度饱和效应、沟道长度调制效应和量子效应进行了特别的考虑；利用所提出的深亚微米FD器件正界面表面势模型，推导了统一反型层电荷公式，建立了深亚微米FD器件的本征中反型漏电流模型。

Based on the thermionic field-diffusion model,new analytical expressions for the terminal currents are proposed.

在此基础上，探讨了对E-B结耗尽层基区侧复合电流各不同考虑情况下的HBT电流计算结果的差异程度。

Depletion width is analyzed and the expression of the 2D threshold voltage model of DMOS devices is given.

提出了DMOS器件的二维阈值电压模型，分析了耗尽层宽度的变化，并得到了模型的数学表达式。

In theoretical analysis, both of 1/f noise and these failure can be attributed to the same defects, such as oxid traps, dislocation and metallic impurity in p-n junction, and weak-bond states near Si/SiO〓 interface etc.

理论分析表明，1/f噪声与这些失效模式可归因于相同的潜在缺陷，如氧化层陷阱、p-n结耗尽区内的位错和重金属杂质、Si-SiO〓界面附近的弱结合键态等。

Solar cell power is generated using the photovoltaic effect of semiconductors.

太阳能电池内部存在P-N结，当P-N结处于平衡状态时，在P-N结处形成耗尽层，存在由N区到P区的势垒电场。

与耗尽层相关的网络解释 [注：此内容来源于网络，仅供参考]

barrier layer：阻档层,耗尽层

barrier 障碍物 | barrier layer 阻档层,耗尽层 | barrier potential difference 阻档层电势差,阻档层电位差

depletion layer：耗尽层

n型半导体中产生电子,p型半导体中产生空穴,在其中间产生耗尽层(Depletion Layer). 当正向偏压(Forward Bias)加在pn结时,多余的载流子(Carrier)会经过耗尽至而渗透至对方. 图6所示的是pn结能带,其中,图6(a)表示在平衡状态,图6(b)表示在正向偏压时,

depletion layer：耗尽层,阻挡层

density 密度 | depletion layer 耗尽层,阻挡层 | depth of field 景深

depletion layer capacitance：耗尽层电容

depletion layer 耗尽层 | depletion layer capacitance 耗尽层电容 | depletion layer capacity 耗尽层电容

depletion layer capacitance：耗尽层电容WcF中国学习动力网

depletion layer 耗尽层WcF中国学习动力网 | depletion layer capacitance 耗尽层电容WcF中国学习动力网 | depletion layer capacity 耗尽层电容WcF中国学习动力网

depletion layer capacity：耗尽层电容

depletion layer capacitance 耗尽层电容 | depletion layer capacity 耗尽层电容 | depletion metal schottky fet 耗尽型肖特基场效应晶体管

depletion layer capacity：耗尽层电容=>空乏層容量

depletion layer capacitance 耗尽层电容 | depletion layer capacity 耗尽层电容=>空乏層容量 | depletion load 耗尽型负载

depletion layer capacity：耗尽层电容WcF中国学习动力网

depletion layer capacitance 耗尽层电容WcF中国学习动力网 | depletion layer capacity 耗尽层电容WcF中国学习动力网 | depletion metal schottky fet 耗尽型肖特基场效应晶体管WcF中国学习动力网

depletion layer transistor：耗尽层晶体管

depleting-layer semiconductor 耗尽层半导体 | depletion layer transistor 耗尽层晶体管 | depletion layer 耗尽层

depletion layer transistor：耗尽层型晶体管

depletion layer capacity | 耗尽层电容 | depletion layer transistor | 耗尽层型晶体管 | depletion layer width | 耗尽层宽度