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Based on the project requirements, the research has focused on the confined electronic states in the semiconductor surface quantum wells. The moden quantum theory and advanced material growth technology have been used. The interband transitions in the surface quantum well have been studied by the in-situ photo-modulated reflection spectroscopy combined with the molecular beam epitaxy system. The optical transitions, including the tansition between ground or excited states of the electron and hole states, have been directly observed.
根据项目任务书的要求，本项研究在现代量子理论与先进材料生长技术基础上对半导体表面量子阱阱结构中的受限电子能态进行系统的光谱实验与理论研究，通过与分子束外延设备直接耦合的光调制光谱手段在原子层量级上直接观测到了表面量子阱中本征能态间的光跃迁特性，其中包括基态间的跃迁和激发态间的跃迁。
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So the study of the interaction of SCHI with solid surfaces has attracted a lot of attention of many famous laboratories in the world. In previous studies on the interaction of slow highly charged ions with solid surfaces, a lot of attention has been paid to Auger electron emission and autoionization.
在低速高电荷态离子与固体表面相互作用过程中，大量的导带电子会转移到入射离子的外壳层空位上形成多电子激发的&空心原子&，并在飞秒时间和纳米尺度范围内在固体表层沉积几十至几百keV的能量，能流功率密度可达10〓W/cm〓，致使表面形成纳米量级的蚀坑。
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electron energy level：电子能级,电子能量级
electron energy analyzer 电子能量分析器 | electron energy level 电子能级,电子能量级 | electron energy loss spectroscopy 电子能量损失能谱学