- 更多网络例句与杂质相关的网络例句 [注：此内容来源于网络，仅供参考]
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Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.
选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。
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After analyzing the difference of orbit electron distribution, valence electron number, atomic radius between impurity M and Cu, we clarify that the unusual low temperature property of heavy electron system CeCu〓M〓 not only come from the"size effect"of impurity, the magnetism, valence electron number of impurity also play an important role.
各杂质掺杂对CeCu〓低温性质的影响是由杂质自身性质所决定的，通过分析不同杂质的轨道电子分布、价电子数目、原子半径与Cu原子的区别，结合实验结果，证明重电子系统CeCu〓M〓的低温性质不但与杂质的尺寸效应有关，而且杂质的磁性、价电子数也起重要的作用。
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The optimal separating condition of chromatography analysis was: Shimadzu VP-ODS 150mm4.6mm as chromatographic column; acetonitrile/water (12/88,V/V, Contained 1.25mmol/l phosphoric acid) as mobile phase with flow rate of 1.0ml/min. Macroporous ion exchange resins and activated carbon were applied to enrich the trace level impurities and the main impurities was determined by LC-MS and GC-MS.They were : Benzonitrile , 2-Methyl-8-hydroxyquinoline, 2,6-Pyridinediamine , O-ethyloxime Cyclo-hexanone and compound with 220 molecular weight .
采用离子树脂和活性炭吸附富集这些微量的杂质，并通过液质联用和气质联用对杂质进行了定性分析，鉴定了影响290nm吸收的主要杂质为苯甲腈，2甲基-8羟基喹啉，2，6二氨基吡啶，O-乙基环己酮肟和分子量220的物质。
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This workshop presses: The clean - degasification - heavy melt -去杂质- casts builds up 钢胚 the craft.
该车间按：清洗—脱气—重熔—去杂质—铸炼钢胚的工艺。
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We systematically discussed impurity species, impurity resources, and impurity recycling by way, gave several impurities influx. and analyzed the results of impurity controlling experiment (Titanium guttering and boronization) on HT-6M.
通过近紫外-可见全谱和对杂质谱线的时间行为的测量，系统分析HT-6M杂质种类和可能的来源，给出了几种常见杂质朝内通量，讨论杂质产生的机制和循环途径，分析了杂质控制实验结果。
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This section defines five different types of impurities, both known and unknown including foreign substances, toxic impurities, con- comitant components, signal impurities, and ordinary impurities.
这些章节定义了五种不同的杂质，已知和未知的，包括异物，毒性杂质，共生组分，信号杂质，和常规的杂质。
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On the bases of a solid solution hardening model, and considering the solubility of isoelectronic impurities in InP crystals and the elastic misfit arised from the differences of the tetrahedral radii between added impurities and host atoms, the pinning forces as large as 〓 have been obtained for isoelectronic impurities in InP.
以InP单晶中的等电子杂质为例，根据固溶强化模型，考虑了等电子杂质在InP单晶中的溶解度以及掺入杂质与基质原子之间共价半径之差引起的弹性失配，计算了这些杂质在InP中对位错的钉扎力可达10〓～10〓达因/厘米〓，从而很好地解释了等电子杂质降低位错密度的作用。
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In the contaminated lard sample, 6 organic compounds have been thus identified to be the raw materials or byproducts in the production of organic tin compounds. Based on the identified contaminants, it can be postulated that the chemical structure of the organic tin compound is dibutyltin-bis-(2-isooctyl thioacetate). The method is simple and precise, and has not been reported in the local literature.Keywords Organic tin compound, Lard, SPME－GC－MS
经过摸索研究，采用固相微萃取方法富集挥发性杂质，直接注入色谱中，经色谱分离，质谱测定，确定了杂质的结构，由杂质成分推断生产有机锡所用的原料，然后判断合成路线，最后确定有机锡的结构，从有毒猪油中鉴定出2－巯基醋酸异辛酯、双（2－醋酸异辛酯）二硫、双醋酸异辛酯硫醚等6种与有机锡有关的杂质，并与相应的有机锡工业品对照，发现工业品中也含有这些杂质，与其合成过程的原料及副产物相符，从而确定有机锡化合物为二硫代醋酸异辛酯二丁基锡。
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By further comparing the retention time of the profounds and that of the impurities,the main impurities in triadimefon technical was conformed as following:First, 1-(4-bromophenoxy)-3,3-dimethyl-1 -(1H-1,2,4-triazol-1 -yl)-2-butanone;Second, 1-(2,4-dichlorophenoxy)-3,3-dimethyl-1 -(1H-1,2,4-triazol-1 -yl)-2-butanone;Third, 1,1 -bis(4-chlorophenoxy)-3,3 -dimethy 1-2-butanoneour conclusion is conformed right.
再经过化合物的保留时间与杂质保留时间的比照，证实了三唑酮原药中的主要杂质是：杂质Ⅰ：1-(4-溴苯氧基)-3，3-二甲基-1-(1H-1，2，4-三氮唑-1-基)-2-丁酮；杂质Ⅱ：1-(2，4-二氯苯氧基)-3，3-二甲基-1-(1H-1，2，4-三氮唑-1-基)-2-丁酮；杂质Ⅲ：1，1-二(4-氯苯氧基)-3，3-二甲基-2-丁酮。
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QL. Reporting of organic impurities should cover (1) specified identified impurities by name,(2) specified unidentified impurities by location/identifier,(3) any unspecified impurities, and (4) total impurities.
有机杂质的报告中，应当包括：1，有记载的已经过确认的杂质的名称；2，有记载但未经过确认杂质的位/标志；3，所有的没有记载的杂质，以及；4，总杂质。
- 更多网络解释与杂质相关的网络解释 [注：此内容来源于网络，仅供参考]
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impurity, acceptor：受体杂质
impurity concentration 杂质浓度 | impurity, acceptor 受体杂质 | impurity, donor 施体杂质
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impurity, acceptor：受子杂质
杂质半导体 impurity semiconductor | 受子杂质 impurity, acceptor | 施子杂质 impurity, donor
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Extrinsic semiconductor：杂质半导体
杂质半导体(extrinsic semiconductor) 半导体中的杂质对电导率的影响非常大,本征半导体经过掺杂就形成杂质半导体,一般可分为n型半导体和p型半导体. 半导体中掺入微量杂质时,杂质原子附近的周期势场受到干扰并形成附加的束缚状态,在禁带中产生附加的杂质能级.
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impurity level：杂质能级
杂质电离 impurity ionization | 杂质能级 impurity level | 杂质分布图 impurity profile
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impurity conduction：杂质导电
impurity center 杂质中心 | impurity conduction 杂质导电 | impurity defect 杂质缺陷
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impurity conduction：杂质传导
impurity 杂质 | impurity conduction 杂质传导 | impurity level 杂质能级
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impurity conduction：杂质导电=>不純物伝導
impurity concentration 杂质浓度 | impurity conduction 杂质导电=>不純物伝導 | impurity contamination 杂质沾污
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impurity atom：化学杂质, 杂质原子
impurity 不纯物, 杂质 | impurity atom 化学杂质, 杂质原子 | impurity element 杂质元素
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impurity self-diffusion coefficient：杂质自扩散系数
segregation | 杂质分凝,杂质偏析 | impurity self-diffusion coefficient | 杂质自扩散系数 | impurity semiconductor | (含)杂质半导体
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mechanical impurities：机械杂质
(17)机械杂质(Mechanical impurities) 机械杂质是存在于油品中所有不溶于溶剂的杂质. 中国标准试验方法是GB/T 511. (18)不溶物(Insolubes) 油品溶解于有机溶剂中,通过过滤残留在滤纸上的杂质 即为不溶物. 中国标准试验方法是GB/T 8926,