施主杂质

词组短语

donor impurity

与施主杂质相关的网络例句 [注：此内容来源于网络，仅供参考]

When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".

当半导体中加入了施主感受主杂质，我们就说该物质"掺杂"了。

The donor impurity and grain boundary combustion-supporting agent containing acceptor impurity were added successively in the ceramic powder during ceramic powder preparation, both of them can also promote grain growing and semiconductive, and the combustion-supporting agent can be good to form insulation layer in oxidizing process.

采用一次性烧成技术研制了晶界层半导体陶瓷电容器，在瓷料配制过程中先后加入施主杂质和含有受主杂质的晶界助烧剂，两者在还原烧成时促使晶粒生长并半导化，助烧剂在氧化时有利于晶界绝缘层形成。

In the research of prescription, through the experiments we knew the influence from the Nb_2O_5 or Y_2O_3 single donor doped on high-temperature PTC ceramic, and got the curve graph drawing the resistivity and mixing quantity. In order to restrain lead volatilize and mix the rang of donors to neutralization the harmful acceptor impurity in raw materials, adopt the prescription design of Nb_2O_5 and Y_2O_3 double donors-doped. From the result, we know that regulation proportion of Nb , Y double donors, can make high-temperature PTC ceramics semiconducting, the pottery demonstrates good electric performance.

为了能够更有效的抑制铅挥发，并且使掺杂范围能够更好的调节，以"中和"原材料中的有害受主杂质，在配方设计中采用了Nb_2O_5和Y_2O_3双施主掺杂的配方，由结果可知，适当的调节Nb、Y双施主掺杂总量及Nb、Y掺杂比例，可以使高温PTC陶瓷充分的半导化，陶瓷表现出良好的电性能。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

Relation of hydrogenic impurity binding energy,effective Bohr a _ and virial theorem value and quantum dots size and studied variationally by using variational wave functions of containing two parameters.

选用含有2个变分参数的波函数，利用变分法计算了无限深球形量子点中施主杂质态的束缚能、杂质有效玻尔半径、维里定理值等随量子点尺度的变化关系。

But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. Therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. With SEM, the microstructure of SrTiO3-based double function ceramic was analyzed.

而晶粒生长、晶粒半导化和晶界绝缘化受到多种因素的影响，诸如杂质的种类和含量、烧成温度等，因此本论文研究了还原烧成温度、中温氧化温度、施主和受主掺杂等对SrTiO_3基陶瓷的压敏和介电性能的影响，并借助于SEM分析对SrTiO_3基双功能陶瓷的微观结构进行了分析。

Inversion holes caused by the vertical electric field EV/ are located in the spacing of two neighboring nC-regions on the interface by the force from lateral electric field (EL/ and the compositive operation of Coulomb's forces with the ionized donors in the undepleted nC-regions. This effectively enhances the electric field of dielectric buried layer EI/ and increases breakdown voltage

纵向电场所形成的反型电荷将被来自横向电场的电场力和未耗尽n+区内高浓度电离施主杂质的库仑力综合作用下固定于界面两个n+之间，从而能有效的提高介质场，增强器件的击穿电压。

Secondly, the energy band structure of codoped-TiO2 shows that an acceptor level and a donor level present inside the band gap, and an electron on the donor level passivates a hole on the acceptor level, so the systems still keep semiconductor character and enhance the separation of electron-hole pairs excited by photo irradiation.

另外， V： N共掺杂TiO2的能带结构表明：导带底下方施主杂质能级上的一个电子刚好补偿价带顶上方受主杂质能级上的一个空穴，使掺杂后TiO2材料表现出半导体的显著特征，这有利于电子—空穴对的分离，提高量子产率。

与施主杂质相关的网络解释 [注：此内容来源于网络，仅供参考]

donor impurity：施主杂质

donor dopant 施主杂质 | donor impurity 施主杂质 | donor level 施主级,施主能级

donor atom：施主原子

donor 施主 | donor atom 施主原子 | donor dopant 施主杂质

ionized gas：电离化气体

ionized donor || 离子化施主 | ionized gas || 电离化气体 | ionized impurity || 电离杂质

donor dopant：施主杂质

donor atom 施主原子 | donor dopant 施主杂质 | donor impurity 施主杂质