vanadium sesquioxide
- vanadium sesquioxide的基本解释
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三氧化二钒
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- Resurrection #9
- 更多 网络例句 与vanadium sesquioxide相关的网络例句 [注：此内容来源于网络，仅供参考]
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We adopted a comparatively perfect technics, such as calcineing ore with Calcium, soaking through NH_4HCO_3, enriching the vanadium with 717 anion exchange resin and depositing vanadium with NH_4C1, to recover the vanadium from argillaceous vanadium ore. At this rate, those problems that high content of SiO_2 in the ore, agglomeration in calcination, low transformation rate of dissoluble vanadium and unavailable enrichment of mill run, can be raveled out.
针对粘土钒矿中SiO_2含量太高，焙烧时易结块，可溶性钒转化率低以及不能选矿富集等问题，本课题采用钙化焙烧法焙烧，碳酸氢铵浸出，717~#强碱性阴离子交换树脂富集，以及氯化铵沉钒等方法，提钒效果较为理想。
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The processes of smelting high vanadium ferrovanadium with vanadium pentoxide and vanadium trioxide are probed into, appropriate parameters are pointed out, and the two processes of smelting high vanadium ferrovanadium are compared.
对使用五氧化二钒和三氧化二钒混合料冶炼高钒铁的工艺进行了探讨，指出了适宜的工艺参数，并对生产高钒铁的两种工艺技术进行了比较。
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One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.
分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。
- 更多网络解释 与vanadium sesquioxide相关的网络解释 [注：此内容来源于网络，仅供参考]
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vanadium sesquioxide：三氧化二钒
vanadium powder 钒粉 | vanadium sesquioxide 三氧化二钒 | vanadium slag 钒渣
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vanadium suboxide：一氧化二钒
vanadium steel 钒钢 | vanadium suboxide 一氧化二钒 | vanadium sulphate 硫酸钒
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vanadium tellurite：钒-亚碲酸盐
钒化合物:vanadium compounds | 钒-亚碲酸盐:vanadium tellurite | 五氧化二钒:pentoxide vanadium