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Moreover, hydrogen passivation is beneficial to improve electricalproperties of cast multicrystalline silicon only after metallic impurities was gettered c
另外，氢钝化只有在金属杂质被吸杂之后才是最为有效的。
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It is found that Cu impurities are gettered primarily in the region containing the precipitated Al layer rather than by cavities at the temperature of 700-1000, While, gettering of Cu occurs in both region at temperature of 1200. In comparison with Al precipitates, whose concentration profile changed greatly with temperature and annealing time, cavities remain at approximately the same depth.
厘埋层SOI材料制备方面：在国内首次成功制备了厚埋层的Smart-cutSOI材料，各项分析测试表明，厚埋层SOI材料的顶层硅厚度均匀，单晶质量优良；顶层Si／SiO_2、SiO_2／Si衬底界面青晰、陡直；材料的电学性能星潭里濒士址丈一一一一一一~一一一一一—一一蒲妻优异。
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polysilicon enhanced gettered backside：多晶硅增强背面吸除(吸杂)
PSEGB polysilicon enhanced gettered backside 多晶硅增强背面吸除(吸杂) | polysilicon enhanced gettered backside 多晶硅增强背面吸除(吸杂) | porcelain-on-steel technology 瓷钢技术
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PSEGB polysilicon enhanced gettered backside：多晶硅增强背面吸除(吸杂)
polyphase microinstruction 多步微指令 | PSEGB polysilicon enhanced gettered backside 多晶硅增强背面吸除(吸杂) | polysilicon enhanced gettered backside 多晶硅增强背面吸除(吸杂)