erasing head

erasing head的基本解释

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抹音磁头, 抹磁头

与erasing head相关的网络例句 [注：此内容来源于网络，仅供参考]

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。

There were 8 groups and each groups had 8 cows in the experiment.groups A was the positive group, be feeded basic dietary and in the normal environment; groups B was basic dietary and in the improved environment ; Group C was feeded with basic dietary and NaHCO_3(120g/d/head) and Mg0(50g/d/head) and KCl(180g/d/head), in the environment with no spray and no wind; Group I is feeded with basic dietary and NaHCO_3 (120g/d/head) and MgO(50g/d/head) and KC1 (180g/d/head) and in the another environment with spray and wind; Group E was feeded,with basic dietary and traditional druggery additive in the environment with no spray and no wind; Group F was feeded with basic dietary and traditional druggery additive in the environment with spray and wind;Group G was feeded with basic dietary and NaHCO_3 (120g/d/head) and MgO(50g/d/head) and KCl (180g/d/head) and traditional druggery additive in the environment with no spray and wind; Group H was feeded with basic dietary and NaHCO_3( 120g/d/head ) and Mg0(50g/d/head) and KCl(180g/d/head) and traditional druggery additive in the environment with spray and wind.

试验分8个处理，每个处理8头奶牛，A处理为对照组，喂以基础日粮，处于常规环境(未喷雾，未机械吹风，下同)，B组为喂以基础日粮，处于改善环境：C组为基础日粮+NaHCO_3(120克/头。日)+MgO(50克/头。日)+KCl(180克/头。日)，处于常规环境：D组为基础日粮+NaHCO_3(120克/头。日)+MgO(50克/头。日)+KCl(180克/头。日)，处于改善环境；E组为基础日粮+中草药添加剂组，处于常规环境；F组为基础日粮+中草药添加剂组，处于改善环境；G组为基础日粮+NaHCO_3(120克/头。日)+MgO(50克/头。日)+KCl(180克/头。日)+中草药添加剂组，处于常规环境；H组为基础日粮+NaHCO_3(120克/头。日)+MgO(50克/头。日)+KCl(180克/头。日)+中草药添加剂组，处于改善环境。

Further, the degradation due to single-electron locally trapping/de-trapping in horn-shaped SuperFlash does not occur in the triple-gate flash cell. This is because of planar poly-to-poly erasing in the triple-gate flash cell instead of tip erasing in the horn-shaped SuperFlash cell.

但是，在这篇论文中，我们发现经过长期循环擦写后，三栅 SuperFlash闪存在电子被擦除后的阈值电压的增加不是因为编程时而导致的浮栅氧化物的退化，而是由于擦除时所造成的隧穿氧化物的退化。

与erasing head相关的网络解释 [注：此内容来源于网络，仅供参考]

erasing head：清洗磁头

erasing 清除 | erasing head 清洗磁头 | erasing magnetic head 消磁头

erasing magnetic head：消

erasing 清除 | erasing head 清洗磁头 | erasing magnetic head 消

erasing head：消磁头

erasing 取消 | erasing head 消磁头 | erasing speed 擦去速度