INP

INP的基本解释

abbr.

Index Number of Prices 物价指数, International News Photos国际新闻图片社

与INP相关的网络例句 [注：此内容来源于网络，仅供参考]

The influence of this complex on the electrical properties of n-type LEC undoped and compensation in Fe-doped InP is discussed.

讨论了其对未掺杂InP的电子特性和掺Fe的InP的补偿的影响，及其对InP热稳定性的影响。

In this dissertation, InGaAs/InGaAsP/InP MQW microdisk laser and its characterization were presented. Some conclusions are as following: the characteristics of lasing threshold was discussed by using rate equation. The dependent relations between threshold and cavity volume, spontaneous emission coupling efficiency β were investigated. The whispering gallery mode and spontaneous emission in a microdisk geometry were then studied. Almost all spontaneous emission was coupled into the lowest order TE mode when the normalized thickness of photonics well was between 0.15 and 0.5. The design principle and device process of InGaAs/InGaAsP/InP MQW microdisk laser were presented. The microdisk lasers with the diameter of 8μm, 4. 5μm and 2μm were succesfully fabricated by using etching techniques. The pulse lasing thresholds for the microdisk with the diameter of 8μm and 4. 5μm were 170μW and 15μW, a record results compared with the published in the literature. The cw lasing threshold for a 2-μm-diameter microdisk was only a few μW. We haven't found similar report up to now. To solve the problem of directional output in a microdisk laser, the power coupling efficiency in a double disk geometry was investigated with the theory of waveguide mode couple. A new structure of electrically pumped microdisk laser with output waveguide was designed, making a foundation for the practical use of microdisk laser.

本文主要研究InGaAs/InGaAsP/InP多量子阱半导体碟型激光器的研制和特性表征，并取得如下结果：利用速率方程理论讨论了激光器激射阈值的特性，分析了阈值与腔体积和自发发射耦合系数β之间的关系；讨论了微碟光子阱结构中的自发发射特性和微碟中WGM模式特性；光子阱结构在其归一化厚度在0.15-0.5之间时，几乎全部自发发射进入到最低阶TE模式中；研究了InGaAs/InGaAsP/InP多量子阱微碟激光器的结构设计原理和器件的制备工艺；利用刻蚀方法成功制备出直径分别为8μm、4.5μm、2μm的碟型微腔激光器；直径8μm和4.5μm的微碟脉冲光泵浦激射阈值分别为170μW、15μW，是目前所见文献报导中比较低的；直径2μm的微碟连续光泵浦激射阈值仅几μW，目前尚未见到达到类似结果的研究报导；为解决微碟激光器激射光定向引出的问题，通过波导耦合模理论分析了双层碟之间功率耦合效率；据此设计了新型带耦合输出波导的电泵浦微腔激光器，为进一步研制可实用的电泵浦微腔激光器打下基础。

On the bases of a solid solution hardening model, and considering the solubility of isoelectronic impurities in InP crystals and the elastic misfit arised from the differences of the tetrahedral radii between added impurities and host atoms, the pinning forces as large as 〓 have been obtained for isoelectronic impurities in InP.

以InP单晶中的等电子杂质为例，根据固溶强化模型，考虑了等电子杂质在InP单晶中的溶解度以及掺入杂质与基质原子之间共价半径之差引起的弹性失配，计算了这些杂质在InP中对位错的钉扎力可达10〓～10〓达因/厘米〓，从而很好地解释了等电子杂质降低位错密度的作用。

与INP相关的网络解释 [注：此内容来源于网络，仅供参考]

breakdown voltage：击穿电压

随着近来IDM大厂的投入,SiGe 技术已逐步在截止频率(fT)与击穿电压(Breakdown voltage)过低等问题获得改善而日趋实用. 除了上述的制程外,其它逐步应用在无线通信高频组件的基材还有磷化铟(InP)或GaAs on Si等制程. 前者较砷化镓更适于高频应用,

.tw：行波

系统讨论了MQW的物理特性,分析了电吸收系数与MQW结构参数的关系,设计了InP/InGaAsP-MQW波导结构,确定了结构参数及掺杂比等;分析了InP/InGaAsP-MQW脊波导及相关器件中光波传输;建立了行波(TW)电极准静态和直接时域近似分析模型,

RAYAN INP.EXP TRADING HARB MOHAMED：皮革,毛皮

Bafadal Trading Est. Abdullah Mohd.Bafadal 切割机,密封机,IT产品 | RAYAN INP.EXP TRADING HARB MOHAMED 皮革,毛皮 | ATE 电子产品,电动工具