端

The influences of the shock thickness and Alfven waves on the particle acceleration by diffusive shock waves are numerically studied through solving one-dimensional diffusive equation including the second-order Fermi effect. It is shown that the spectral index of the energetic particles strongly depends on the shock thickness. For example, the spectral index increases from 2.1 to 3.7 in the low energy range of 3-10 MeV and from 2.5 to 5.0 in the high energy range of 20-60 MeV as the thickness increases. The spectral index decreases from 4.3 to 3.1 as the particle injection energy increases. The spectral index decreases from 4.0 to 1.8 at the quasi-steady stage with the enhancement of the compression ratio from 2 to 4. The results indicate that under the influence of Alfven waves, the energetic particle spectrum at lower energy becomes flat and the spectral index decreases from 2.5 to 0.6 in the low energy range of 3-10 MeV and from 11.6 to 5.0 in the high energy range of 20-60 MeV. At the same time, the rollover energy reaches 19.6 MeV. The spectral index decreases from 5.8 to 2.9 as the energy density of Alfven waves increase. All these results are basically consistent with the theoretical models, as well as the observations of typical energetic particle events.

通过数值求解包含二阶费米加速的一维扩散方程，探讨在准平行激波条件下激波厚度和级联阿尔芬波对粒子加速的影响，研究粒子分布函数的演化与激波厚度和阿尔芬波强度的内禀关系，计算结果表明：(1)考虑激波厚度时，谱指数明显依赖于激波厚度，随着厚度从0.32增大到2.56，低能端(3-10MeV)谱指数逐渐从2.1增加到3.7，高能端(20-60MeV)谱指数从2.4增大到5.0，能谱逐渐变软；当初始注入粒子动量增大1.3倍，质子能谱指数从4.3减小到3.1，且与零厚度激波加速的谱指数差值缩小；厚度不变时，随着压缩比从2增加到4，准稳态分布时低能端(3-10MeV)粒子能谱指数逐渐从4.0减小到1.8谱变硬；(2)在级联阿尔芬波的影响下，随着时间的增大，粒子在低能处(3-10MeV)的谱指数从2.5减小到0.6高能端(20-60MeV)谱指数从11.6减小到5.0，能谱变硬，拐点能量值从7.5MeV增大到为19.6MeV；随着波的能量密度增大，谱指数从5.8减小到2.9，这表明阿尔芬波强度越大，加速效率越高，通过与激波厚度解析结果和高能粒子事件的观测能谱比较发现两者是一致的，说明数值模拟结果是可靠的。

The proximal and distal nerve stumps were sutured l cm apart, in an end-to-side fashion like ＂π＂, to the epneurium windows, opened by removing the epineural sheath on the intact tibial nerve trunk with 1 mm long.

方法将大鼠右侧腓总神经在胭窝处剪除约5mm后，将断裂的腓总神经近端和远端分别就近与同侧胫神经上的外膜窗施行端侧吻合，吻合口间距约10mm；动物存活24个月后，将手术侧近端吻合口以上胫神经剪断，再将辣根过氧化物酶注入远段腓总神经干内，72h后取材并经四甲基联苯胺显色显示脊髓L3-6节段神经元和L4、L5脊神经节细胞，同时取腓总神经远段行电镜观察神经纤维再生状态。

A frequency divider, comprises: an inverting unit comprising an input, and an output; and a plurality of switch inverters in series, having at least a first switch inverter and a last switch inverter; each switch inverter comprising two inphase switches, in which the first switch inverter is connected to the output of the inverting unit, and the last switch inverter is connected to the input of the inverting unit; wherein the two inphase switches of each of the switch inverters are respectively supplied by a first voltage and a second voltage, any two of the adjacent switch inverters are respectively controlled by two inverted clocks, thereby the two inphase switches are selectively turned on synchronously and turned off synchronously.

反相单元包含输入端以及输出端；串联的多个切换反相器，具有至少一第一切换反相器以及最终切换反相器，每一切换反相器包含两个同相开关，其中第一切换反相器连接于反相单元的输出端，且最终切换反相器连接于反相单元的输入端；每一切换反相器的同相开关分别由第一电压与第二电压供电，任何两个相邻的切换反相器分别受控于两个反相时钟，因此该两个同相开关是选择性同步开启及同步关闭的。

It has a microcontroller peripheral devices are connected to high-speed bus connections within the connection interface and memory card connection interface, the micro-controller memory card interface, high speed bus interface to connect external devices and virtual within the integrated drive electronics interface module, and the virtual integrated drive electronics interface module includes an integrated drive electronics interface to the virtual host and virtual device side, and when the host side of the card reader connected to the memory card storage or read the instructions issued, the command will be sent to Xuni integrated Shi-driven electronic interface module, and in which the instruction to complete, while the memory card of the information on the transmission to achieve high speed Waiwei components provided within the connecting bus transfer rate, and the host will think that reader is integrated drive electronics interface devices, not just within the high-speed peripheral devices connected bus devices.

其具有微控制器分别连接有高速外围元件内连接总线连接接口及存储卡连接接口，而微控制器具有存储卡接口、高速外围元件内连接总线接口及虚拟整合式驱动电子接口模块，且虚拟整合式驱动电子接口模块包括有整合式驱动电子接口的虚拟主控端及虚拟装置端，而当主机端对读卡机所连接的存储卡下达储存或读取的指令时，该指令会传送至虚拟整合式驱动电子接口模块，并在其中将指令完成，而存储卡内的资料于传输时可达到高速外围元件内连接总线所提供的传输速率，且主控端会认为读卡机为整合式驱动电子接口装置，而非单纯的高速外围元件内连接总线装置。

Moreover, TSPA scheme possesses mutual authentication security attribute, and is capable of establishing secure tunnels between mutually authenticated clients and servers to protect subsequent service access authorization intermediately followed.

TSPA的另一个鲜明特点是具有对客户端和服务端的双向认证功能，并能在认证的客户端和服务端之间构建一条加密的安全隧道，用于保护认证后的访问授权等操作。

In high-impedance current-input inverting configurations, where a length of shielded wire is used to guard the lead from the current source to the amplifier's inverting input, the guard should either be driven by a buffer at the same potential as the non-inverting input, or be tied directly to the non-inverting input, with a second outer shield connected to the signal's reference point.

如果将运放接成反相放大器的形式，并且在信号源与运放反相端之间用一段带有屏蔽层的导线来充当的防护罩，那么对防护罩的处理有两种选择：要么用一个缓冲跟随器来驱动，跟随器输出端与运放同相端电位相等，而且除跟随器外，防护罩不与其他点接触；要么将防护罩直接接到运放的同相端，然后在其外面加一个屏蔽层，并且将屏蔽层连接到信号的参考电位。

The invention discloses a DC/DC circuit, comprising a PWM controller, a current amplifier, a peak current comparator, an error amplifier, a main switch, a synchronous switch and also an operational amplifier. The non inverting input end of the operational amplifier is used for coupling with input voltage or voltage reference, or used for coupling with the input voltage and the voltage reference; the inverting input end of the operational amplifier is used for coupling with the voltage reference or ground, and the output end thereof is connected with the non inverting input end of the error amplifier.

本发明公开了一种DC/DC电路，包括PWM控制器、电流放大器、峰值电流比较器、误差放大器、主开关和同步开关；还增设运算放大器，其同相输入端用于与输入电压或基准电压耦合，或用于同时与输入电压和基准电压耦合；其反相输入端用于与基准电压或地耦合，其输出端与所述误差放大器的同相输入端连接。

A strength model of end-plate was presented by modifying the strength model of the T-stub which was set up by Kulak in 1987 and by presenting two hypotheses about the stress distribution on the beam section located at the connection of beam and end-plate.

对传统T形件连接强度模型作了修正，建立了端板连接节点的端板强度模型。提出了节点处梁端截面应力分布的两个假设，给出了端板屈服弯矩的近似计算方法。

A resistor is connected between the output end of the live wire and the output end of the earth wire, another resistor is connected between the output end of the null line and the input end of the earth wire, a neon lamp in a photoelectric coupling switch is connected at the two ends of the earth wire switch in parallel after being connected with the resistors in series, one end of a light sensitive resistor in the photoelectric coupling switch GR2 is connected with the anode DC+ of an integrated circuit IC power in the creepage protector, the other end of the light sensitive resistor is connected with the anode of a diode D3, the cathode of the diode D3 is connected with the triggering pole of the silicon-controlled rectifier SCR in the creepage protector, the neon lamp and the light sensitive resistor are positioned into a dark box, and a small hole which avoids the light sensitive resistor is formed on the dark box.

一种防止地线触点未导通的全能安全插头，包括各带开关的地、零、相三线接线和由零序互感器、脱扣器、放大器、整流器、试验回路和可控硅组成的漏电保护器，所述的火线输出端、地线输出端间连接电阻，所述的零线输出端、地线输入端间串接电阻，光电耦合开关内的氖灯与电阻串联后并联在地线开关两端，光电耦合开关GR2内光敏电阻的一端与漏电保护器内的集成电路IC电源正极DC＋连接、光敏电阻的另一端与二极管D3的正极连接，二极管D3的负极与漏电保护器内的可控硅SCR触发极连接，氖灯和光敏电阻置于暗箱中，暗箱上开一避开光敏电阻的小孔。

In this way, the flow control states of the local terminal and the communication remote terminal are assured to be consistent, and the packet loss situation is avoided happening due to the disorder of the flow control state in the communication process between the local terminal and the communication remote terminal, thereby improving the work quality of the switch to a great degree and the stability of the system.

这样，便保证了本端与通信对端的流控状态的一致性，使本端和通信对端在通信过程中不会因流控状态的错乱而发生丢包现象，这在很大程度上提高了交换机的工作质量，也提高了系统的稳定性。

It is also known as one of the most poisonous naturally occurring substances.

它也被称为一个最自然发生的有毒物质。

The greatest stress is found at the location on the cross section where V is the largest.

最大应力出现在横截面上V为最大的地方。