电流增益

The geometry of these mirrors is such that the current gain is unity.

这些反射镜的几何形状，这样的电流增益是团结。

Excellently DC performances include a maximum current gain of 50 and a low offset voltage of 70 mV.

经由实验所测量的结果，该元件的最大电流增益为50，补偿电压为70 mV。

From our measurement data, we find that the current gain is influenced by emitter size effect.

依量测结果可知，电流增益会受到射极尺吋效应的影响。

The excellent DC performances are demonstrated include a maximum current gain of 88 and a low offset voltage of 54 mV.

经由实验所测量的结果，该元件的最大电流增益为88，补偿电压为54 mV。

Transmit Softclipping Time Constant Receiving Input Sidetone Network Input Line Current Regulation Stop Value Microphone Input Microphone Input Transmit Gain Adjustment Transmit and Receive Part Power Supply Ground Line Current Source Power Supply Voltage Stabilizer Positive Line Unregulated Microcontroller Power Supply Receive Gain Adjustment Negative Earphone Output Positive Earphone Output Ringer Buzzer Output Ring Power Supply Reset Power On Ring Indicator Oscillator Input Mask, Ring Melody Input Data Input Data Clock Input Microcontroller Stabilized Power Supply Reference Voltage (VCC/2) DTMF Filter

1第1页，本页显示记录1-8，共8条记录分1页显示发送Softclipping时间常数接收输入侧音网络输入线电流调节停止价值麦克风输入麦克风输入发射增益调整发送和接收部分电源地线电流源电源稳压器的正电源线无管制的单片机接收增益调整负耳机输出耳机输出正林格蜂鸣器输出电源供应环环指标振荡器输入掩码电复位，环旋律输入数据输入数据时钟输入单片机的稳定电源参考电压（Vcc / 2）双音多频滤波器

The design rules of silicon low temperature bipolar junction transistor are obtained from the simulation results. One way is that the concentrations of emitter and base are decreased on the base of the normal bipolar junction transistor. Another way is that base concentration is higher than that of emitter, i.

模拟了普通常温工作的双极晶体管在低温下性能的退变，如电流增益、截止频率、基极电阻和基极-发射极电容等，模拟结果和解析模型分析的结果一致，并与常温的结果作了对比分析。

The incomplete ionization of the impurities in 4H-SiC can affect the temperature dependences of the Early voltage and current gain.

SiC中杂质非完全离化会影响4H-SiC BJT的Early电压及电流增益的温度特性。

There are two parts in this thesis. Part I focuses on the transient effect in InGaP/GaAs hetero-junction bipolar transistors. Part II focuses on the P memory effect and buffer-layer-quality determination using C-V measurement in AlGaAs/GaAs pseudomorphic high-electron-mobility transistors. The characterization of hydrogen passivation for InGaP HBTs grown on semi-insulating GaAs substrates is studied. The transient effect caused by hydrogen passivation results the current gain ?

本论文分两部分，第一部份讨论在磷化铟镓的异质接面双载子电晶体中，由於氢的包覆效应产生的特性之研究，由於氢在此种元件中所造成的载子包覆现象是引起电流增益增加的暂态现象的主要原因，本论文提出一个计算氢包覆比例的模型，并与SIMS量测的结果相比对，经过几次热回火处理，此种暂态效应可以被消除。

In the research on the backward-wave oscillation suppression the startoscillation current which is derived from Two-wave theory approximately is given up. Four typical un-uniform slow wave structures start-oscillation current equations are derived by backward-wave amplifing gain expressions with the Two-wave theory. Then the start-oscillation current rates I〓/I〓 between ununiform circuit and uniform circuit of the four structures have been got.

在返波抑制问题的研究中，从二波理论出发，抛弃了二波理论中从起振条件出发来得到起振电流近似表达式的方法，而是利用二波理论的基本关系式分别推导出了四种典型实用的非均匀输出线路的返波增益表达式，采用计算返波增益的方法来得到四种非均匀输出线路的起振电流与均匀输出线路起振电流的比值I〓/I〓。

ABSTRACT It occurs that the performance of silicon bipolar transistors degradates seriously at low temperatures due to the gap-narrowing effect、the carrier freeze-out effect and the trapping effect of shallow dopants, which has significant influence on the operation of ultra-high-speed bipolar circuits and BiCMOS circuits at low temperatures.

硅双极晶体管由于禁带变窄效应，载流子冻析效应和浅能级杂质陷阱效应的作用，其电流增益和频率性能在低温下严重退化，从而极大地影响了低温高速双极电路和高性能的低温BiCMOS技术的发展。

I will endeavour to find you some assistance.

我尽力帮你找人帮忙。

At first I only know bruck is the idol of American younglings, afterwards I returned back to Taiwan ,even in Beijing last year ,I saw her poster everywhere, I was so surprised at her charm.

起初我只晓得布鲁克雷德丝是美国少男少女崇拜的偶像，后来回台湾，甚至去年在北京，居然也四处看见她的海报，才惊讶她的魅力之大。