栅电路

Based on the frequency characteristics of absolute time-grating displacement sensor,a new digital signal processing principle of data stream serial/parallel transform was presented.

在分析绝对式时栅位移传感器频响特性的基础上，介绍了一种在数字信号处理电路中的数据串并转换思想，并提出了一种基于串并转换思想的绝对式时栅信号处理电路设计方案。

It consists of circuitry that this constant current circuit stabilizes the criteria of a highly precise returned type constant current circuit of operation in another constant current circuit,Furthermore, the voltage amplification with very high stability is realized by adopting this constant current circuit also as the bias circuit of a first rank cascode and the 2nd step cascode, and the 2nd step constant current load intensity.

它由电路，这恒流电路稳定的标准，一个高度精确的返回式恒流电路的运行在另一恒流电路，此外，电压放大具有极高的稳定性，实现了通过这项恒流电路也作为偏见电路的第一级和第二栅栅一步，和第二步骤恒定电流负荷强度。

It can also be applied to different voltage range, if the subcircuit model uses different types of FET models.

同时，根据不同沟道区域的饱和原理，采用不同的模型与参数进行模拟，使子电路适用于不同栅压和漏压。

Feedback is from the cathode circuit to the grid circuit via the capacitive divider C2 and C3. C3 is variable, to allow exact tuning to 1.00 MHz.

阴极到第一栅的回授电路是通过C2和C3组成的电容分压电路实现的。C3用可变电容以似的电路能在1MHZ上准确震荡。

Detailed introductions were made to the application in frequency converter for unit series multi-electrical level, power bus, micro-computer control and artificial intelligence, total digitalized optical fiber control and power unit standard modulization, insulated grid bipolar transistor drive circuit intelligentize etc.

介绍了变频器的市场情况以及变频技术的现状，详细介绍了单元串联多电平、功率母线、微机控制和人工智能、全数字化光纤控制以及功率单元标准模块化、绝缘栅双极晶体管IGBT驱动电路智能化等技术在变频器上的应用。

The gate driver is made up of the shift register, level shifter and output circuit. It can realize the turn-on of the TFT non-interlaced in 60Hz frame frequency.

栅驱动电路主要包括移位寄存器、电平位移电路和输出缓冲电路，能够以60Hz的帧频逐行选通TFT开关管。

When modeling the floating gate potential, the effect of the parasitical field capacitance to the floating gate potential is considered, and the model is verified by the simulation results and the measured results.

建立了神经元MOS的HSPlCE模型，在对浮栅电势建模时考虑了场寄生电容对浮栅电势的影响，并对模型进行了验证，为神经元MOS电路的设计提供了更精确的模拟手段。

7 To 3.3 V operating supply voltage 44.1 kHz sampling frequency 16.9344 MHz (384fs) system clock Built-in crystal oscillator circuit 16-bit, MSB rst, rear-packed serial data input format ( 64 fs bit clock) 8-times oversampling digital lter · 32 dB stopband attenuation ·+0.05 to -0.05 dB passband ripple Deemphasis lter operation · 36 dB stopband attenuation ·-0.09 to +0.23 dB deviation from ideal deem- phasis lter characteristics Attenuator · 7-bit attenuator (128 steps) set by microcontrol- ler Soft mute function set by parallel setting ·(approximately 1024/fs total muting time) Mono setting · Left or right channel mono selectable by micro- controller Built-in innity-zero detection circuit , two-channel D/A converter · 3rd-order noise shaper · 32fs oversampling Built-in 3rd-order post-converter low-pass lters 24-pin VSOP package Molybdenum-gate CMOS process

2.7至3.3 V工作电源电压为44.1千赫的采样频率16.9344兆赫（384fs）系统时钟内置晶体振荡器电路的16位，MSB在前，后包装的串行数据输入格式（64飞秒位时钟）8倍超采样数字滤波器·32分贝的阻带衰减·+0.05至-0.05分贝通带纹波去加重滤波器的运作·36 dB抑制频宽衰减·-0.09到0.23 dB的偏差认为不理想，症状困扰评估滤波特性衰减器·7位衰减器（128级）集由单片机在-莱尔软静音功能的平行设置·（共约1024/fs静音时间）单声道设置·左或右声道单声道微控制器可选的内置的无限零检测电路Δ，两通道的D / A转换器·第三阶噪声整形·32fs过采样内置三阶后转换器的低通滤波器24引脚VSOP封装钼栅CMOS工艺

With the current mode logic structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate.

输入缓冲、驱动放大电路采用电流模电路，满足高速数据传输和放大的能力，输出级电路结构采用新型的MOS-HBT共源共栅结构可以降低米勒效应减小输入电容，从而使激光驱动芯片工作在10Gb/s时也能达到良好的性能。

The two kinds of PhC TWTs are the interdigital slow-wave structure and metal grating slow-wave strucutre with two-dimensional dielectric PhC, and the meander line slow-wave structure with PhC and cutoff-waveguide structures.

第四章讨论了利用缺陷模式工作的二维光子晶体栅慢波电路和光子晶体对插销带状束行波放大器，和光子晶体-截止波导曲折线慢波电路行波放大器的设计方法。

He is the most remarkable man that I have ever known.

他是我知道的人中最值得注意的人。

Increased appearance of lymphocele was noticed in patients with diabetic nephropathy, congenital malformations of the urinary tract, and inflammatory diseases, including glomerulopathy and extraglomerular ones, after high-voltage radiotherapy and after removal of the renal graft.

经过高压放射疗法和切除移植肾后，在糖尿病肾病患者、泌尿系统先天性畸形患者和炎症患者身上发现淋巴囊肿有所增加，包括肾小球病和球外疾病等。