查询词典 well-done

Based on these recognitions, by the analysis of production method, development formation division, development well grid and well spacing, single well daily rate and recovery efficiency prediction, etc, a development plan was brought to effect: it is all around affusion and made the oil-well of east fault sparse, and predicted the recovery efficiency of 55%, provide a sound foundation for the future development in the area.

在此认识的基础上，通过开采方式、开发层系划分、开发井网和井距、单井日产能力、采收率预测等研究，确立了边外注水+断层东油井抽稀，断层西少部署一排油井的开发方案，利用数值模拟方法，预测采收率为55%，完成油藏开发方案的设计，为该区下一步开发提供了有力依据。

The evolutionary model organic beach or reef reservoir, controlling factors of which are sedimentation, digenesis and tectonics ,are established according to the result of sedimentary facies and digenesis. At last regional distribution of reservoir has been predicted. Comprehensive study indicates the dark, 50-300 m thick upper Permian series, which is rich in the organic material and biota , is beneficial to formation and protection of petroleum and natural gas. Moreover the stratigraphy possess with better reservoir ability. The reservoir distributed in shallow glacis along Beichuan Tongkou - Guangyuan Changjianggou ,He 12 well - She 1 well - Jiange - Cangxi Yongningpu -Long 4 well - Bian 1 well in Wujiaping stage and in platform edge beach along Beichuan Tongkou - Jiangyou Shuigentou - Jiange -Cangxi Yongningpu - Nanjiang .

综合以上，本文认为研究区上二叠统地层厚50—300m，颜色较深、生物含量多、富含有机质，并且该套地层自形成后，大多直接进入埋藏成岩环境，是一套十分有利于油气的形成与保存的地层；同时该套地层的局部层段具有一定的储集性能，在吴家坪期储层主要分布在北川通口—广元长江沟、河12井—射1井—剑阁—苍溪永宁铺—龙4井—扁1井一带，在长兴期储层主要分布在北川通口—江油水根头—剑阁—苍溪永宁铺—南江一线。

According to the law of equivalent percolation resistance, the productivities of mixed well patterns of horizontal well or multilateral horizontal well with vertical well are studied.

根据等值渗流阻力法原理，采用电路分析方法，研究了水平井和分支水平井与直井混合井网条件下的产能公式。

As the single well with 4 openings, the Well was named as Four-eyed Well or Four-open Well.

此井为单一井穴，上覆石板并留有四个汲水孔，所以称为「四眼井」或「四孔井」。

Systematic well test, or steady-state well test, is one of important methods by which the open flow capacity of a gas well and the general expression of gas well deliverability equation are determined.

系统试井是确定气井产能方程、无阻流量等的重要方法之一。

This paper presents the basic concept of the production systematic analysis gas well and the basic principle and method in nodal point analysis of the gas well; Give the result of deep going analysis as well as research on the gas flow rule in the wellbore,performance relationships curve of inflow and outflow as well as the curve of pure gas well sand liquid production on gas wells.

本文重点论述了气井生产系统分析的基本概念、基本原理和方法，对天然气在井筒中的流动规律，气井流入与流出动态曲线，纯气井和产液气井的动态曲线，进行了较为深入的系统分析和研究。

Next, take the rock mechanics as a foundation, has analyzed the gas drilling broken rock mechanism; Thought that the gas drilling broken rock mechanism is different with the conventional drilling fluid well drilling, the bottom of the well rock destruction way destroys for the volume, the bottom of the well rock and the drill bit contact plane disproportionality causes the gas well drilling well diviation another reason.

其次，以岩石力学为基础，分析了气体钻井破岩机理；认为气体钻井破岩机理不同于常规钻井液钻井，井底岩石破坏方式为体积破坏，井底岩石与钻头接触平面不均衡性是导致气体钻井井斜的又一原因。

The paper discusses briefly the differences between testing of CBM well and the conventional oil and gas well in aspects of well testing objects,petrographical structure,level of extraction,well test model and analysis methods of well testing results.

本文从煤层气试井的对象、煤岩结构、开采阶段、试井模型、试井分析方法等方面简要讨论了煤层气试井和常规油气井试井的差别。

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly.

本发明公开一种高压P型金属氧化物半导体管，包括P型衬底，在P型衬底上设有深N型阱，在深N型阱上设有N型阱和P型漂移区，在N型阱上设有N型接触孔、P型源及场氧化层，在P型漂移区上设有P型漏及场氧化层，其特征在于位于N型阱上方的栅氧化层部分的厚度小于位于P型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层。

Among these four varactors, two of them are fabricated on n-well and use the p-n junction between n-well and substrate to isolate substrate noise. The other two are fabricated on p-well and surrounded by deep n-well and n-well in order to isolated substrate noise.

这四种变容器中，其中两种生成於n型井上且利用介於n型井与基体的p-n接面隔绝基体杂讯；另外两种生成於p型井上且被深层n型井与n型井所包围以隔绝基体杂讯。

It is also known as one of the most poisonous naturally occurring substances.

它也被称为一个最自然发生的有毒物质。

The greatest stress is found at the location on the cross section where V is the largest.

最大应力出现在横截面上V为最大的地方。