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varactors相关的网络例句

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与 varactors 相关的网络例句 [注:此内容来源于网络,仅供参考]

The essay deals with using a MC1648P chip produced by morotola company and varactors, inductances to form a circuit to realize a certain frequency range of high frequency signal.

设计采用Motorola公司的MC1648P及双变容二极管与电感组成的振荡电路得到要求的频率范围的高频信号,从而组成电压控制LC振荡器。

The phase noise changes only by about 2dB in the tuning range because of the pn-junctions as the varactors.

由于利用pn结二级管作为变容管,在调频范围内,相位噪声仅改变约2dB。

The circuit architecture includes inductors, varactors, and a positive-feedback differential pair.

在此电路架构中包含了电感、可变电容和正回授差动对。

The parasitic effects of RF-IC passive devices such as inductors and varactors and the design guidelines for the on-chip spiral inductors are included too.

以低压、低功耗、低相位噪声和较大调谐范围为原则完成压控振荡器的电路结构设计。

The stop band above the waveguide cut-off frequency can be controlled by tuning the varactors loaded between the arms of SRRs. Similarly, the pass band below the waveguide cut-off frequency can also be tuned by the same token.

在波导的截止频率之上,我们可以通过控制变容二极管的电容值达到控制禁带的目的,在波导的截止频率以下,我们依然可以通过改变变容二极管的电容来控制通带。

The feasibility of a varactor-based adaptive matching network for antenna mismatch correction is investigated. A LC-resonator-based Π-section network is optimized for its performance, in terms of operation power gain, Smith Chart coverage, and effective capacitance tuning range of the varactors.

对适用于天线失配修正的基于可变电容构建的自适应匹配网络进行了可行性分析,重点对基于LC谐振腔所设计的Π型匹配网络从功率增益、史密斯圆图覆盖率和可变电容有效调谐范围几个方面进行了性能优化。

The analysis included the principal of oscillator , the selection of the topology, the characteristic of some frequently-used LC VCOs and some design tips on designing inductors and varactors, the model of phase noise of Leeson and Hajimiri ,estimation of phase noise ,etc.

然后论文对开关电容调谐的LC VCO设计理论进行了详细的分析,包括振荡器工作原理、VCO性能指标、VCO常用结构、片上电感和变容管的相关理论、开关电容调谐理论、Leeson和Hajimiri相位噪声模型,相位噪声估计等。

In this thesis, there are two types of varactors used in the VCO: one is the Philips' BB135 p-n junction capacitor; the other is Al/HfO2/Si capacitor with HfO2 dielectric. Because the dielectric constant of HfO2 is larger than that of SiO2, the capacitance of Al/HfO2/Si capacitor will be larger than that of MOS capacitor with the same thickness and area. Therefore, there will be larger unit voltage for adjusting the ratio of the capacitance values of the capacitors.

在本论文实验的VCO电路中之可变电容有2种:一种是飞利浦厂商所提供型号为BB135之P-N接面电容;第二种是自制的Al/HfO2/Si电容是使用二氧化铪(HfO2)来做为电容的介电材料,因为HfO2介电常数比氧化矽(SiO2)大,目的是要在相同厚度以及面积下,就可以有较大的电容值,希望能藉此有较大的单位电压改变电容值的比值。

Among these four varactors, two of them are fabricated on n-well and use the p-n junction between n-well and substrate to isolate substrate noise. The other two are fabricated on p-well and surrounded by deep n-well and n-well in order to isolated substrate noise.

这四种变容器中,其中两种生成於n型井上且利用介於n型井与基体的p-n接面隔绝基体杂讯;另外两种生成於p型井上且被深层n型井与n型井所包围以隔绝基体杂讯。

A layout was designed to fabricate InGaP/GaAs HBTs with different scale and passive components including thin film resistors, overlay capacitors, spiral inductors and varactors. Their equivalent models were given and the process was discussed.

设计了一套包括叉指型、马蹄型、多指单胞等不同参数的InGaP/GaAs HBT器件和集成在GaAs衬底上的不同规格的电感、电容、电阻、变容二极管等无源器件,研究了无源器件的等效电路和计算方法,为微波单片集成电路的设计和制备打下了一定基础。

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