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TiOSO4 and Ti4 were used as precursors while glass fiber cloth and glass plates were used as substrates respectively.

本文还分别以TiOSO4和Ti4为前驱体制备了溶胶，并以玻璃纤维布和玻璃板为载体，制备了负载型TiO2薄膜用作光催化剂。

The apparent Km values with guaiacol, catechol and pyrogallol as substrates were 2.75, 12.4 and 12.8mmol/L at 25℃ and pH 7.0, respectively.

该酶在25℃和0.05mol/L磷酸缓衝液(pH7.0)条件下对愈创木酚、邻苯二酚和没食子酸的Km分别是2.75、12.4和12.8mmol/L。

Epitaxial AlN films have been successfully deposited on GaN/Sapphire substrates at low-temperature (300℃) using Helicon sputtering system.

本研究之目的是在GaN/Sapphire基板上低温成长AlN的磊晶薄膜，并探讨各种溅镀条件对AlN薄膜品质的影响，以及研究AlN/GaN介面所感应之二维电子气现象，证实介面间受极化效应感应产生的二维电子气确实存在。

The epitaxial ZnO films are prepared on Al2O3 substrates by using helicon wave plasma assisted sputtering technique. The as-grown and annealed films showed different in-plane orientations.

采用螺旋波等离子体辅助溅射沉积法在衬底Al2O3的(0001)面上沉积ZnO薄膜，所生长的薄膜在未退火和退火时表现出不同的平面内取向。

In this thesis, the AlN thin films were deposited on SiO2/Si and GaN/Sapphire substrates respectively for layered structure SAW devices by Helicon sputtering system. Laser ultrasound system was used to measure the acoustic wave velocity of AlN/SiO2/Si layered structure. Frequency response and insertion loss were measured by an HP8510C vector network analyzer to analysis insertion loss, sidelobe and quality factor. The results showed the possibility of incorporating thin films SAW devices with other semiconductor devices.

本研究使用回旋溅镀系统分别在SiO2/Si、GaN/Sapphire两种基板上沉积AlN并制作层状表面声波元件，并利用雷射超音波系统量测AlN/SiO2/Si结构之表面波速及机电耦合系数，再利用网路分析仪量测其频率响应，分析其插入耗损、 sidelobe、品质因子Q，以比较不同基材所制作之层状表面声波元件之特性，此研究成果初步验证AlN层状表面声波元件与半导体元件整合之可行性。

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

On Si (100) substrates hexagonal GaN films were obtained.

对在Si（111）、Si（100）和SOI柔性衬底上的GaN生长进行了研究。

In this work, ZnO nanorods were synthesized on the silicon substrates in a solution of zinc nitrate hexahydrate and methenamine at ~85C for 2 hours.

摘要在本研究中，氧化锌奈米柱是使用硝酸锌六水合物及四氮六甲圜在矽基板上以大约85C温度处理两小时来合成的。

The indentation test with Rockwell indenter is good for hard substrates.

圆锥压头的压入法适用于基体硬度较高的镀层。

The possible substrates of AF Begets AF in clinic are LAiD and blocking of the interatrial conduction et al.

慢性快速心房起搏房颤连缀模型犬有显著心房纤维化的病理改变和心房电重构。

Connectors are lines that can be anchored to particular places, called glue points , on the graphic object.

连接符，可固定在图形对象的特定的地方的线条。

Another way of putting it, too many agents have a say in each other's work, and bureaucratic rigor mortis sets in.

另一种表达是，太多的作用物在彼此的工作里都有话语权，官僚的僵尸开始抬头。