查询词典 stoichiometrical

N_2 gas added into IBED system during deposition could enhance N/Al ratio (from 0.53∶1 to 0.81∶1) near to stoichiometrical structure and improve dielectric properties of AlN thin films (breakdown field to about 1.42 MV/cm).

它具有许多特殊的物理性能，因此在许多方面已得到广泛应用或具有潜在的应用前景，尤其是作为绝缘材料应用于微电子领域[2～4]。

Therefore, the cultivation by combined fed-batch and L-cysteine addition was no doubt one of the most efficient approaches to improve both GSH production and intracellular GSH content, simultaneously.(10) The metabolic network of C. utilis WSH 02-08 for GSH biosynthesis, with glucose as the sole carbon source, was developed based on the stoichiometrical balance equations.

对于分批发酵来说，在L-半胱氨酸添加前后，GSH的合成量约各占总量的50％，对于流加发酵，最终GSH产量可以高达1150mg·L〓，胞内GSH含量达到3.32％，L-半胱氨酸添加后的平均比GSH合成速率更是高出110％。

The native oxides on CdSe surface could be reduced to elemental Selenium by a HF etching process. Bombardment using 100eV Ar〓 ions with a dosage of about 1×10〓 ions/cm〓 could remove all the elemental Selenium, which results in a normal stoichiometrical surface CdSe.

实验观测到HF刻蚀可以将CdSe半导体表面的Se氧化物还原为元素Se.100eV的Ar〓离子轰击可以除去HF刻蚀后在表面还原生成的元素Se，从而清洁样品表面，保证了表面CdSe的化学计量比。

Investigating the influences of processing parameters on the C/Si molar ratio of resulted nanosized SiC powders indicated that there was a direct pyrolytic reaction from DMS to SiC as well as the previous proposed two-step reaction. Under the optimized processing conditions, the silicon carbide powders of homogeneous particle size distribution, spherical shape and stoichiometrical C/Si molar ratio are obtained. The silicon carbide particle consists of β-SiC crystallite arranged randomly.

论文系统研究了工艺条件对产物粉体C／Si摩尔比、粉体颗粒尺寸和组成粉体的SiC微晶尺寸的影响；研究了粉体制备过程中可能发生的化学反应，提出了反应过程中除了分步进行的生成SiC的反应外，同时在高温区还存在一步完成的生成SiC的化学反应的观点；通过调整工艺参数，制备得到了粉体尺寸分布均匀、呈均匀球状、C／Si摩尔比符合化学计量比的颗粒尺寸为40nm的纳米SiC粉体。

The stoichiometrical preferred-orientation AlN (100) polycrystalline films were deposited on Si (100) wafers with DE=1.0 J*cm-2, PN2=13.333 kPa, Tsub=200℃, V=650 V, f=5 Hz, and dS-T=4 cm.

实验结果表明，当DE=1.0 J*cm-2，PN2=13.333 kPa，Tsub=200℃，V=650 V，f=5 Hz，dS-T=4 cm时，高质量的AlN薄膜被成功地沉积于Si(100)基片上。

He and Nina moved to California and lived at 2005 Ivar Street, Apt.

他和Nina搬到加州，并在2005年伊瓦尔街，公寓生活。

Droperidol （ potently inhibits transfected HERGchannels and this is the probable mechanism for QT prolongation.

氟哌利多有效地抑制了转染的 HERG 钾通道，可能是 QT 间期延长的机制。