查询词典 neutron

Two T3 He and D3He reactions are chosen for generating the neutrons. The neutron beam is collimated with the multiplex shielding system. The source intensity is monitored by the proportional counter or semiconductor proton recoil telescope. The neutron response curves of ST-401 scintillators with thickness from 0.16mm to 2.00mm are measured versus neutron energy. The uncertainties of experimental results are discussed in detail.

选用T3He反应和D3He反应作为中子源，子源，中子束流采用复合屏蔽体进行准直，源强采用正比计数管和半导体望远镜进行监测，实验测量了厚度从0.16mm到2.00mm的八种规格薄闪烁体的能量响应曲线，对实验的结果的不确定度进行了分析。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Paired ionization chambers used for the dosimetry of mixed gamma-neutron field in reactor, consist of a tissue-equivalent chamber which responds to both neutron and gamma radiation, and a nonhydrogenous chamber which is relatively insensitive to neutron.

采用对中子和γ辐射具有相似灵敏度的组织等效电离室与对中子不太灵敏而对γ辐射灵敏的无氢电离室配对，组成双电离室探测器，测量反应堆混合场中的中子和γ剂量率，具有较高的测量精度。

These two sets of neutron optical potential parameters have been ingathered in the Nuclear Parameter Data LIBRARY of China by Chinese Nuclear Data Center.Based on these neutron optical potential parameters, program DWUCK4 has been applied to calculate direct inelastic cross sections which are used in SUNF program as input data and then the SUNF program has been used for calculating all nuclear reaction data of neutron induced on 135Ba, 136Ba, 137Ba, 138Ba and 130Te in energy range from 0.01 to 20MeV, respectively.

在这两组中子光学势参数的基础上，应用程序DWUCK4计算了直接非弹截面，作为输入数据用于SUNF程序，用SUNF程序计算了中子入射~(135)Ba、~(136)Ba、~(137)Ba、~(138)Ba和~(130)Te五个核的反应全套数据。

High-quality epithermal neutron beam is one of the key conditions for making Boron Neutron Capture Therapy of malignancy successful. The objective of this study is to design the epithermal neutron beam which meets the clinical requirements for BNCT.

高品质的超热中子束是硼中子俘获治疗恶性肿瘤取得成功的一个关键条件。

Comparing our result with the observaitonal value, we find out that the double neutron star binaries stand a good chance to be hyperon stars and the neutron stars of X-ray binaries are more like traditional neutron stars.

把计算值同观测结果相比较，发现双中子星更象超子星，X-射线双星中的中子星更象传统中子星。

The circuit system for the portable sealed tube neutron generator with neutron yield more than 1010n/s is described in this thesis. The ion source circuit, the reservoir circuit and the target high voltage circuit of this neutron generator are studied in detail.

论文对所研制的新一代便携式1010n/s中子发生器电路进行了全面的介绍，对离子源电路，存储器电路，特别靶极高压电路结构进行深入剖析。

Special attention has been paid to the neutron data between 20 to 200 MeV due to thedevelopment of ADS and other neutron application fields such as dosimetry for radiationsafety and fast neutron cancer therapy in recent years.

近年来，随着加速器驱动洁净核能源的发展和中子科学的广泛应用特别是高空飞行器的辐射防护和放射性治疗方面的进展等，中能中子核反应数据的需求也越来越大。

In the paper, a way of amending λ was introduced to solve the point-reactor neutron kinetics equations so that the numerical solution of single-group delayed neutron model is closed to that of six groups delayed neutron model when a positive step changed reactivity was introduced.

通过修正单组缓发中子先驱核衰变常量λ值，使点堆中子动力学方程单组缓发中子模型在正反应性阶跃输入时的数值计算结果趋近于六组缓发中子模型数值计算结果。

Adopting Lorentz-invariant coupling model of neutron-antineutron and neutral meson strong interaction, we have physical analysis and accurate calculation on the neutron and antineutron to two neutral meson renormalization chain diagram propagator, and acquire the theoretical result; furthermore, after application of it to the physical process analysis and cross-section evaluation in this reaction , the differential cross-section of which is given. Moreover, through the comparison among this calculation and those scenarios: neutron-antineutron tree diagram and renormalization chain diagram propagator contribution, some important information about radiative correction was obtained.

采用中子-反中子与中性介子强相互作用的Lorentz不变耦合模型，对中子反中子重整化链图传播子作了有关物理分析及其严格解析计算，获得精确理论计算结果；进而将此结果用于中子反中子反应生成两个中性介子反应的物理过程分析及其截面的计算研究中，并精确计算出中子反中子重整化链图传播下中子反中子反应反应微分截面；最后还将此计算结果与中子反中子树图和重整化单圈链图传播下该反应微分截面作了对比分析，获得了有相关辐射修正的重要信息。

It is also known as one of the most poisonous naturally occurring substances.

它也被称为一个最自然发生的有毒物质。

The greatest stress is found at the location on the cross section where V is the largest.

最大应力出现在横截面上V为最大的地方。